IRLI620G N-Channel MOSFET 200V 4A TO-220-3 Equivalent & Substitute Parts

Part Overview

The IRLI620G is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 4A continuous drain current in a Through Hole TO-220-3 package. This device is classified as obsolete, making identification of equivalent and substitute parts necessary for ongoing design support, maintenance, and production continuity. The IRLI620G delivers 30W maximum power dissipation and operates across a temperature range of -55°C to 150°C junction temperature.

Substiute Parts

IRLI620G
Vishay SiliconixIn Stock: 2801IRLI620G Datasheet
IRLI620G
Current Part
RCX081N20
Rohm SemiconductorIn Stock: 10324RCX081N20 Datasheet
RCX081N20
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 4 A
Rds On (Max) @ Id, Vgs 800 mOhm @ 2.4A, 5V
Power Dissipation (Max) 30 W (Tc)
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package TO-220-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IRLI620G is determined by strict alignment of electrical and mechanical parameters within the N-Channel MOSFET category. The primary substitution criteria are:

Electrical Compatibility Requirements:

  • Drain-to-Source Voltage (Vdss) must equal or exceed 200V
  • Continuous Drain Current (Id) must equal or exceed 4A at 25°C
  • On-state resistance (Rds On) must not exceed the original specification to maintain circuit performance
  • Gate-Source Voltage (Vgs) rating must accommodate the drive circuit requirements
  • Operating temperature range must support the application environment

Mechanical Compatibility Requirements:

  • Through Hole mounting type
  • TO-220 package family (TO-220-3 or TO-220FM variants acceptable)
  • Pin configuration compatible with existing PCB layouts

The RCX081N20 from Rohm Semiconductor meets these substitution criteria through equivalent voltage rating (200V Vdss), superior current capability (8A vs. 4A), comparable on-state resistance (770 mOhm vs. 800 mOhm), and compatible Through Hole TO-220FM packaging.

Parameter Comparison

Parameter IRLI620G (Vishay Siliconix) RCX081N20 (Rohm Semiconductor) Unit
FET Type N-Channel N-Channel
Drain to Source Voltage (Vdss) 200 200 V
Continuous Drain Current (Id) @ 25°C 4 8 A (Tc)
Rds On (Max) @ Id, Vgs 800 mOhm @ 2.4A, 5V 770 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA 5.25V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10V 8.5 nC @ 10V
Vgs (Max) ±10 ±30 V
Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25V 330 pF @ 25V
Power Dissipation (Max) 30 (Tc) 40 (Tc) W
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole
Package TO-220-3 TO-220FM
Product Status Obsolete Active
RoHS Status Non-compliant ROHS3 Compliant

Engineering Selection Recommendations

RCX081N20 as Primary Substitute:

The RCX081N20 is the designated manufacturer-recommended substitute for the IRLI620G. This substitution is supported by the following factors:

Electrical Equivalence: The RCX081N20 maintains the critical 200V Vdss rating and provides doubled continuous drain current capability (8A vs. 4A), delivering enhanced thermal margin and current headroom for the application. On-state resistance is comparable (770 mOhm vs. 800 mOhm), ensuring minimal impact on circuit efficiency. Gate charge is reduced by approximately 47%, improving switching speed and reducing drive circuit stress.

Product Status and Compliance: The IRLI620G is classified as obsolete, creating supply chain risk. The RCX081N20 maintains active product status with established supply channels. The RCX081N20 is ROHS3 compliant, whereas the IRLI620G is non-compliant, supporting modern manufacturing and environmental standards.

Package Compatibility: Both devices employ Through Hole mounting in the TO-220 family. The RCX081N20 uses TO-220FM packaging, which maintains mechanical and electrical compatibility with standard TO-220-3 PCB layouts. Pin configuration remains consistent for direct substitution.

Regulatory Alignment: Both parts carry identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, with REACH Unaffected status. The RCX081N20 eliminates RoHS non-compliance concerns associated with the obsolete IRLI620G.

Frequently Asked Questions (FAQ)

Q: Can the RCX081N20 directly replace the IRLI620G in existing designs?

A: Yes. The RCX081N20 provides electrical and mechanical compatibility through matching 200V Vdss rating, Through Hole mounting, and TO-220 package family. The doubled current rating (8A vs. 4A) and improved gate charge characteristics enhance performance without requiring circuit redesign.

Q: What are the key differences between the IRLI620G and RCX081N20?

A: Primary differences include: (1) Continuous drain current: RCX081N20 provides 8A versus IRLI620G 4A; (2) Gate charge: RCX081N20 is 8.5 nC versus IRLI620G 16 nC, improving switching performance; (3) Vgs(th): RCX081N20 threshold is 5.25V versus IRLI620G 2V, requiring higher gate drive voltage; (4) Product status: RCX081N20 is active versus IRLI620G obsolete; (5) RoHS compliance: RCX081N20 is ROHS3 compliant versus IRLI620G non-compliant.

Q: Are there package considerations when substituting the IRLI620G?

A: Both devices use Through Hole TO-220 packaging. The IRLI620G uses TO-220-3 with isolated tab, while the RCX081N20 uses TO-220FM. Both packages maintain compatible pin spacing and PCB footprints, allowing direct substitution without layout modifications.

Q: What is the impact of the higher Vgs(th) in the RCX081N20?

A: The RCX081N20 threshold voltage is 5.25V at 1mA versus the IRLI620G at 2V at 250µA. This requires gate drive circuits to supply higher voltage levels for full device enhancement. Existing drive circuits rated for 5V or higher operation remain compatible.

Q: Does the RCX081N20 provide thermal advantages over the IRLI620G?

A: Yes. The RCX081N20 supports 40W maximum power dissipation at Tc versus the IRLI620G at 30W, providing 33% additional thermal capacity. Combined with lower on-state resistance and reduced gate charge, the RCX081N20 operates with improved thermal margin in equivalent applications.

Q: Is the RCX081N20 suitable for applications requiring the full -55°C to 150°C temperature range?

A: The RCX081N20 specification provided indicates 150°C maximum junction temperature capability. Verification of the complete operating temperature range specification is necessary for applications requiring the full -55°C lower bound. Contact the manufacturer for complete temperature range documentation.

Q: What compliance advantages does the RCX081N20 offer?

A: The RCX081N20 is ROHS3 compliant, eliminating the non-compliance status of the obsolete IRLI620G. Both devices maintain identical REACH Unaffected and EAR99 ECCN classifications, supporting regulatory alignment for modern manufacturing environments.

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