IRLD120 Equivalent & Substitute Parts Reference

Part Overview

The IRLD120, manufactured by Vishay Siliconix, is an N-Channel MOSFET in the Transistors, FETs, MOSFETs category. It is rated for 100V drain-to-source voltage and a continuous drain current of 1.3A (Ta), packaged in a 4-HVMDIP through-hole configuration. This product is classified as obsolete, making it necessary to identify suitable alternative models for ongoing designs or replacement needs.

Key Parameters

Manufacturer Part Number	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status
IRLD120	N-Channel	MOSFET (Metal Oxide)	100 V	1.3A (Ta)	270mOhm @ 780mA, 5V	2V @ 250µA	12 nC @ 5 V	±10V	490 pF @ 25 V	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)	RoHS non-compliant

Substitute Part Grouping Explanation

Substitution logic for N-Channel MOSFETs in this product category is based exclusively on parameters that determine functional and mechanical equivalence. These parameters are: FET type, technology, drain-to-source voltage (Vdss), continuous drain current (Id), maximum on-resistance (Rds On), gate threshold voltage (Vgs(th)), maximum gate-source voltage (Vgs), gate charge (Qg), input capacitance (Ciss), power dissipation, operating temperature range, mounting type, and mechanical package.

Parameter Comparison

Manufacturer Part Number	FET Type	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case	RoHS Status
IRLD120	N-Channel	MOSFET (Metal Oxide)	100 V	1.3A (Ta)	270mOhm @ 780mA, 5V	2V @ 250µA	12 nC @ 5 V	±10V	490 pF @ 25 V	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)	RoHS non-compliant
IRLD120PBF	N-Channel	MOSFET (Metal Oxide)	100 V	1.3A (Ta)	270mOhm @ 780mA, 5V	2V @ 250µA	12 nC @ 5 V	±10V	490 pF @ 25 V	1.3W (Ta)	-55°C ~ 175°C (TJ)	Through Hole	4-HVMDIP	4-DIP (0.300", 7.62mm)	ROHS3 Compliant

Engineering Selection Recommendations

Selection between IRLD120 and IRLD120PBF should be based on product status and RoHS compliance. The IRLD120 is obsolete and RoHS non-compliant, while IRLD120PBF is active and ROHS3 compliant. For applications requiring current compliance standards or ongoing availability, IRLD120PBF is appropriate.

Frequently Asked Questions (FAQ)

Q: What are the essential criteria for substituting the IRLD120 MOSFET?
A: Substitution is based on matching FET type, technology, maximum drain-to-source voltage, continuous drain current, Rds On, gate threshold voltage, power dissipation, gate charge, input capacitance, operating temperature range, mounting type, and mechanical package.

Q: Are the IRLD120 and IRLD120PBF mechanically and electrically equivalent?
A: Yes. Both share the same electrical parameters and mechanical footprint, ensuring direct compatibility in design and assembly.

Q: Does the IRLD120PBF comply with current RoHS requirements?
A: The IRLD120PBF is ROHS3 Compliant, while the IRLD120 is RoHS non-compliant.

Q: Is any pinout or package modification required when using IRLD120PBF in place of IRLD120?
A: No modification is required; both use the 4-HVMDIP/4-DIP (0.300", 7.62mm) package.

Q: Which part should be selected when RoHS compliance is mandatory?
A: The IRLD120PBF should be selected for applications requiring RoHS compliance.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message