IRL8113 N-Channel MOSFET 30V 105A Equivalent & Substitute Parts

Part Overview

The IRL8113 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 105A continuous drain current in a Through Hole TO-220AB package. This device is classified as Obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement.

The IRL8113 belongs to the HEXFET® series and is designed for high-current switching applications requiring robust thermal performance at 110W maximum power dissipation. Due to its obsolete status, direct replacements or functionally equivalent alternatives from active product lines are required for new designs and production continuity.

Substiute Parts

IRL8113
Infineon TechnologiesIn Stock: 1415IRL8113 Datasheet
IRL8113
Current Part
PSMN2R0-30PL,127
Nexperia USA Inc.In Stock: 10287PSMN2R0-30PL,127 Datasheet
PSMN2R0-30PL,127
MFR Recommended
PSMN4R3-30PL,127
Nexperia USA Inc.In Stock: 5627PSMN4R3-30PL,127 Datasheet
PSMN4R3-30PL,127
MFR Recommended
STP95N4F3
STMicroelectronicsIn Stock: 15279STP95N4F3 Datasheet
STP95N4F3
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 105 A
On-State Resistance (Rds On) @ 21A, 10V 6 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.25 V
Gate Charge (Qg) @ 4.5V 35 nC
Power Dissipation (Max) 110 W
Operating Temperature Range -55 to 175 °C
Package Type TO-220AB Through Hole
FET Technology MOSFET (Metal Oxide) N-Channel

Substitute Part Grouping Explanation

Substitution of the IRL8113 is determined by the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

  • Drain-to-Source Voltage (Vdss): Must be ≥30V to maintain voltage margin
  • Continuous Drain Current (Id): Must be ≥105A to support application current requirements
  • Package Type: TO-220AB Through Hole mounting for mechanical compatibility
  • Operating Temperature Range: Must support -55°C to 175°C
  • FET Type: N-Channel MOSFET technology

Secondary Compatibility Parameters:

  • On-State Resistance (Rds On): Lower values indicate improved efficiency; values within ±50% of original are acceptable
  • Gate Charge (Qg): Affects switching speed; higher values acceptable if drive circuitry supports
  • Power Dissipation: Must support thermal requirements of the application

The substitute parts listed below meet the primary criteria while offering variations in secondary parameters that reflect modern manufacturing and improved performance characteristics.

Parameter Comparison

Parameter IRL8113 (Infineon) PSMN2R0-30PL,127 (Nexperia) PSMN4R3-30PL,127 (Nexperia) STP95N4F3 (STMicroelectronics)
Manufacturer Infineon Technologies Nexperia USA Inc. Nexperia USA Inc. STMicroelectronics
Vdss (V) 30 30 30 40
Id @ 25°C (A) 105 100 100 80
Rds On (mOhm) 6 @ 21A, 10V 2.1 @ 15A, 10V 4.3 @ 15A, 10V 6.2 @ 40A, 10V
Vgs(th) (V) 2.25 @ 250µA 2.15 @ 1mA 2.15 @ 1mA 4 @ 250µA
Gate Charge (nC) 35 @ 4.5V 117 @ 10V 41.5 @ 10V 54 @ 10V
Power Dissipation (W) 110 211 103 110
Package TO-220AB TO-220AB TO-220AB TO-220
Product Status Obsolete Obsolete Obsolete Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

PSMN2R0-30PL,127 (Nexperia USA Inc.)

This substitute maintains identical voltage and package specifications (30V, TO-220AB) with 100A continuous drain current, representing a 4.8% reduction from the IRL8113. The significantly lower on-state resistance (2.1 mOhm vs. 6 mOhm) provides improved efficiency and reduced power dissipation. However, this part is also classified as Obsolete. ROHS3 compliance and higher power dissipation rating (211W) support modern manufacturing standards. Gate charge is elevated (117 nC), requiring verification of gate drive circuit capability.

PSMN4R3-30PL,127 (Nexperia USA Inc.)

This substitute provides identical voltage and package specifications (30V, TO-220AB) with 100A continuous drain current. On-state resistance (4.3 mOhm) falls between the IRL8113 and PSMN2R0-30PL,127, offering a balanced performance profile. Gate charge (41.5 nC) is comparable to the original device. ROHS3 compliance is provided. This part is also Obsolete but offers a closer electrical match to the original IRL8113 characteristics.

STP95N4F3 (STMicroelectronics)

This substitute offers the only Active product status among alternatives, providing long-term availability assurance. The 40V voltage rating provides additional voltage margin above the 30V requirement. Continuous drain current is reduced to 80A, representing a 23.8% decrease from the IRL8113. On-state resistance (6.2 mOhm) is comparable to the original. Gate threshold voltage is elevated (4V), which may require gate drive circuit adjustment. ROHS3 compliance and STripFET™ III technology support modern applications. This part is suitable for applications where the 80A current rating is sufficient and the higher voltage rating is beneficial.

Selection Priority:

For applications requiring exact current capacity (105A) and voltage (30V) specifications, PSMN4R3-30PL,127 provides the closest electrical match with ROHS3 compliance. For applications where current can be reduced to 80A and higher voltage margin is acceptable, STP95N4F3 offers the advantage of Active product status and long-term availability.

Frequently Asked Questions (FAQ)

Q: Can PSMN2R0-30PL,127 be used as a direct replacement for IRL8113?

A: PSMN2R0-30PL,127 meets the voltage (30V) and package (TO-220AB) requirements with 100A continuous drain current, which is within 5% of the IRL8113 rating. However, the significantly higher gate charge (117 nC vs. 35 nC) requires verification that the gate drive circuit can supply the additional charge without exceeding switching frequency or thermal limits. The lower on-state resistance improves efficiency but may require thermal management review.

Q: What is the difference between PSMN2R0-30PL,127 and PSMN4R3-30PL,127?

A: Both parts maintain 30V voltage and TO-220AB package compatibility with 100A current ratings. PSMN2R0-30PL,127 has lower on-state resistance (2.1 mOhm) and higher gate charge (117 nC), resulting in higher power dissipation capability (211W). PSMN4R3-30PL,127 has higher on-state resistance (4.3 mOhm) and lower gate charge (41.5 nC), providing characteristics closer to the original IRL8113. Selection depends on whether efficiency or gate drive simplicity is prioritized.

Q: Why does STP95N4F3 have a 40V rating instead of 30V?

A: STP95N4F3 is rated for 40V drain-to-source voltage, which exceeds the 30V requirement of the IRL8113. This higher voltage rating provides additional safety margin in applications subject to voltage transients or overshoot conditions. The 40V rating does not prevent use in 30V applications; it simply indicates the device can withstand higher voltage stress.

Q: Is STP95N4F3 suitable if my application requires 105A continuous current?

A: STP95N4F3 is rated for 80A continuous drain current, which is 23.8% below the IRL8113 specification. This part is suitable only if the application current requirement can be confirmed to remain below 80A under all operating conditions, including transient peaks and thermal derating. If 105A capacity is mandatory, PSMN2R0-30PL,127 or PSMN4R3-30PL,127 must be selected.

Q: What does "Obsolete" product status mean for these parts?

A: Obsolete status indicates the manufacturer has discontinued active production and support for that part number. PSMN2R0-30PL,127 and PSMN4R3-30PL,127 are listed as Obsolete, meaning existing inventory may be available but no new production is guaranteed. STP95N4F3 maintains Active status, indicating ongoing production and long-term availability. For new designs, STP95N4F3 is preferred if current requirements permit.

Q: Are all substitute parts RoHS compliant?

A: IRL8113 is RoHS non-compliant. PSMN2R0-30PL,127, PSMN4R3-30PL,127, and STP95N4F3 are all ROHS3 compliant, meeting modern environmental and manufacturing standards. This compliance is required for many OEM applications and regulated markets.

Q: Can I use these parts interchangeably in the same PCB layout?

A: All substitute parts use TO-220AB or TO-220 Through Hole packages, which are mechanically compatible with standard TO-220 footprints. However, electrical parameter differences (particularly gate charge and threshold voltage) may require gate drive circuit adjustments. Thermal management may also require review due to differences in power dissipation ratings and on-state resistance values.

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