IRL640STRR N-Channel MOSFET 200V 17A D2PAK Equivalent & Substitute Parts

Part Overview

The IRL640STRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 17A continuous drain current in a surface mount TO-263 (D2PAK) package. This device is classified as obsolete product status. Equivalent and substitute parts are necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements where the original part is no longer actively manufactured.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	17	A (Tc)
RDS(on) Max @ 10A, 5V	180	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V
Gate Charge (Qg) @ 5V	66	nC
Input Capacitance (Ciss) @ 25V	1800	pF
Power Dissipation (Ta)	3.1	W
Power Dissipation (Tc)	125	W
Operating Temperature Range	-55 to 150	°C (TJ)
Package Type	TO-263 (D2PAK)	Surface Mount
RoHS Status	Non-compliant

Substitute Part Grouping Explanation

Substitute parts for the IRL640STRR are grouped based on the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain to Source Voltage (Vdss): 200V minimum
Continuous Drain Current (Id): 17A or greater
Package Type: TO-263 (D2PAK) surface mount
RDS(on) characteristics: Compatible with 180mOhm reference at specified gate voltage
Gate Threshold Voltage (Vgs(th)): Within acceptable operating range
Operating Temperature: -55°C to 150°C minimum

Parametric Equivalent Parts maintain identical or superior electrical specifications with the same package footprint, enabling direct replacement without circuit modification.

Manufacturer Recommended Parts offer enhanced performance characteristics (higher current ratings, improved RDS(on), or extended temperature ranges) while maintaining voltage and package compatibility. These parts are suitable for applications requiring performance headroom or improved thermal management.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A)	RDS(on) (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Pd Tc (W)	Status	RoHS
IRL640STRR	Vishay Siliconix	200	17	180 @ 10A, 5V	2 @ 250µA	66 @ 5V	1800 @ 25V	125	Obsolete	Non-compliant
IRL640STRLPBF	Vishay Siliconix	200	17	180 @ 10A, 5V	2 @ 250µA	66 @ 5V	1800 @ 25V	125	Active	ROHS3 Compliant
IRL640STRRPBF	Vishay Siliconix	200	17	180 @ 10A, 5V	2 @ 250µA	66 @ 5V	1800 @ 25V	125	Active	ROHS3 Compliant
FQB19N20LTM	onsemi	200	21	140 @ 10.5A, 10V	2 @ 250µA	35 @ 5V	2200 @ 25V	140	Active	ROHS3 Compliant
FQB19N20TM	onsemi	200	19.4	150 @ 9.7A, 10V	5 @ 250µA	40 @ 10V	1600 @ 25V	140	Active	ROHS3 Compliant
FQB34N20LTM	onsemi	200	31	75 @ 15.5A, 10V	2 @ 250µA	72 @ 5V	3900 @ 25V	180	Active	ROHS3 Compliant
IRF640NSTRLPBF	Infineon Technologies	200	18	150 @ 11A, 10V	4 @ 250µA	67 @ 10V	1160 @ 25V	150	Active	ROHS3 Compliant
RCJ160N20TL	Rohm Semiconductor	200	16	180 @ 8A, 10V	5.25 @ 1mA	26 @ 10V	1370 @ 25V	40	Active	ROHS3 Compliant
STB19NF20	STMicroelectronics	200	15	160 @ 7.5A, 10V	4 @ 250µA	24 @ 10V	800 @ 25V	90	Active	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent Selection (Direct Replacement):

IRL640STRLPBF and IRL640STRRPBF are parametric equivalents of the IRL640STRR, offering identical electrical specifications with active product status and ROHS3 compliance. Both parts are manufactured by Vishay Siliconix and maintain the same TO-263 (D2PAK) package configuration. These parts are recommended for applications requiring exact electrical performance matching without circuit redesign. IRL640STRRPBF offers higher inventory availability (15,600 units) compared to IRL640STRLPBF (6,893 units).

Manufacturer Recommended Alternatives (Performance Enhancement):

FQB19N20LTM (onsemi) provides 21A continuous drain current with improved RDS(on) of 140mOhm and higher power dissipation capability (140W Tc). This part is suitable for applications requiring enhanced current handling and thermal performance while maintaining 200V voltage rating and D2PAK package compatibility.

FQB19N20TM (onsemi) offers 19.4A continuous drain current with 150mOhm RDS(on) and extended gate voltage range (±30V). This part accommodates applications with higher gate drive voltage requirements.

FQB34N20LTM (onsemi) delivers 31A continuous drain current with significantly improved RDS(on) of 75mOhm and 180W power dissipation. This part is applicable to high-current applications requiring superior thermal management.

IRF640NSTRLPBF (Infineon Technologies) provides 18A continuous drain current with 150mOhm RDS(on) and extended operating temperature range to 175°C. This part is suitable for high-temperature applications.

RCJ160N20TL (Rohm Semiconductor) offers 16A continuous drain current with 180mOhm RDS(on) in a compact LPTS package. This part is applicable where space constraints require alternative packaging.

STB19NF20 (STMicroelectronics) provides 15A continuous drain current with 160mOhm RDS(on) and 90W power dissipation. This part is suitable for applications with moderate current requirements.

All recommended alternatives maintain 200V Vdss rating, TO-263 (D2PAK) package compatibility, and ROHS3 compliance. Selection should be based on specific application requirements for current capacity, thermal dissipation, and gate drive voltage characteristics.

Frequently Asked Questions (FAQ)

Q: Can IRL640STRLPBF or IRL640STRRPBF be used as direct replacements for IRL640STRR?

A: Yes. IRL640STRLPBF and IRL640STRRPBF are parametric equivalents with identical electrical specifications (200V, 17A, 180mOhm RDS(on), same package). Both are manufactured by Vishay Siliconix and maintain the same TO-263 (D2PAK) footprint. The primary difference is product status (Active vs. Obsolete) and RoHS compliance (ROHS3 vs. Non-compliant). No circuit modification is required.

Q: What is the difference between the Vishay Siliconix IRL640 variants?

A: IRL640STRLPBF and IRL640STRRPBF differ in packaging configuration. STRLPBF indicates Tape & Reel (TR) packaging with lead-free termination. STRRPBF also indicates Tape & Reel packaging with lead-free termination. Both maintain identical electrical performance and package footprint. Selection depends on procurement and assembly requirements.

Q: Can FQB19N20LTM replace IRL640STRR in all applications?

A: FQB19N20LTM is electrically compatible with 200V Vdss and D2PAK package, but offers enhanced specifications: 21A vs. 17A continuous current, 140mOhm vs. 180mOhm RDS(on), and 140W vs. 125W power dissipation. This part is suitable for applications where the original part operates within its ratings. Applications requiring exact current or thermal characteristics should verify compatibility with circuit design parameters.

Q: What is the significance of RDS(on) differences between substitute parts?

A: RDS(on) (on-state drain-to-source resistance) directly affects power dissipation and heat generation. Lower RDS(on) values reduce power loss and thermal output. For example, FQB34N20LTM with 75mOhm RDS(on) dissipates significantly less heat than IRL640STRR with 180mOhm RDS(on) at equivalent current levels. Selection should consider thermal management requirements and circuit power budget constraints.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All recommended substitute parts (IRL640STRLPBF, IRL640STRRPBF, FQB19N20LTM, FQB19N20TM, FQB34N20LTM, IRF640NSTRLPBF, RCJ160N20TL, and STB19NF20) are ROHS3 compliant. The original IRL640STRR is RoHS non-compliant. Compliance upgrade is achieved through parametric equivalent or manufacturer recommended alternatives.

Q: Can parts with different gate threshold voltages (Vgs(th)) be interchanged?

A: Gate threshold voltage affects gate drive requirements. IRL640STRR has Vgs(th) of 2V @ 250µA, while some alternatives (FQB19N20TM, RCJ160N20TL, STB19NF20) have higher thresholds (4V to 5.25V). Higher threshold voltages require stronger gate drive signals. Substitution is permissible if the circuit gate driver can supply the required voltage and current for the alternative part's threshold specification.

Q: What package considerations apply to RCJ160N20TL?

A: RCJ160N20TL uses LPTS (Low Profile Top Side) package instead of standard D2PAK. While both are surface mount packages with TO-263-3 pin configuration, LPTS offers reduced height profile. PCB layout and thermal management characteristics may differ. Verify mechanical compatibility with PCB assembly equipment and thermal interface requirements before substitution.

Q: How do gate charge (Qg) differences affect circuit performance?

A: Gate charge represents the total charge required to switch the MOSFET on or off. Lower gate charge (e.g., STB19NF20 at 24nC) requires less gate drive energy and enables faster switching. Higher gate charge (e.g., FQB34N20LTM at 72nC) requires more gate drive capability. Selection depends on gate driver specifications and switching frequency requirements. Verify gate driver current and voltage ratings are adequate for the selected part's gate charge specification.

Q: What is the significance of input capacitance (Ciss) in substitute selection?

A: Input capacitance affects gate drive circuit impedance and switching speed. Lower Ciss values (e.g., STB19NF20 at 800pF) enable faster switching and reduce gate drive power requirements. Higher Ciss values (e.g., FQB34N20LTM at 3900pF) increase gate drive complexity. Selection should consider gate driver bandwidth and switching frequency requirements.

Q: Are there inventory considerations for substitute part selection?

A: Yes. Inventory availability varies significantly: IRL640STRRPBF (15,600 units), IRL640STRLPBF (6,893 units), IRF640NSTRLPBF (25,300 units), STB19NF20 (18,400 units), FQB19N20LTM (5,684 units), FQB19N20TM (1,790 units), RCJ160N20TL (2,100 units), and FQB34N20LTM (1,470 units). For high-volume production, parts with higher inventory availability reduce supply chain risk.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message