IRL640S N-Channel MOSFET 200V 17A D2PAK Equivalent & Substitute Parts

Part Overview

The IRL640S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage with 17A continuous drain current in a Surface Mount TO-263 (D2PAK) package. This device is classified as obsolete product status. Due to its obsolete classification and limited availability in certain supply channels, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Drain to Source Voltage (Vdss)	200	V
Continuous Drain Current (Id) @ 25°C	17	A (Tc)
Rds On (Max) @ 10A, 5V	180	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	2	V (Max)
Gate Charge (Qg) @ 5V	66	nC (Max)
Input Capacitance (Ciss) @ 25V	1800	pF (Max)
Power Dissipation (Tc)	125	W
Operating Temperature Range	-55 to 150	°C (TJ)
Mounting Type	Surface Mount	—
Package	TO-263 (D2PAK)	—

Substitute Part Grouping Explanation

Substitution of the IRL640S is determined by strict equivalence across the following critical electrical and mechanical parameters:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
Package Type: Must be TO-263 (D2PAK) or mechanically compatible variant
Mounting Type: Surface Mount
FET Technology: N-Channel MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Minimum 17A at 25°C
Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuitry
On-Resistance (Rds On): Lower values indicate improved performance; values at or below 180mOhm @ specified conditions are acceptable
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements

Substitute parts are grouped into two categories: Parametric Equivalents (identical electrical specifications with different packaging or compliance status) and Functional Substitutes (superior or comparable electrical performance within the same package family).

Parameter Comparison

Manufacturer Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Ptc (W)	Package	Product Status	RoHS Status
IRL640S	Vishay Siliconix	200	17	180 @ 10A, 5V	2 @ 250µA	66 @ 5V	1800 @ 25V	125	TO-263 (D2PAK)	Obsolete	Non-compliant
IRL640SPBF	Vishay Siliconix	200	17	180 @ 10A, 5V	2 @ 250µA	66 @ 5V	1800 @ 25V	125	TO-263 (D2PAK)	Active	ROHS3 Compliant
FQB19N20TM	onsemi	200	19.4	150 @ 9.7A, 10V	5 @ 250µA	40 @ 10V	1600 @ 25V	140	TO-263 (D2PAK)	Active	ROHS3 Compliant
FQB19N20LTM	onsemi	200	21	140 @ 10.5A, 10V	2 @ 250µA	35 @ 5V	2200 @ 25V	140	TO-263 (D2PAK)	Active	ROHS3 Compliant
FQB34N20LTM	onsemi	200	31	75 @ 15.5A, 10V	2 @ 250µA	72 @ 5V	3900 @ 25V	180	TO-263 (D2PAK)	Active	ROHS3 Compliant
IRF640NSTRLPBF	Infineon Technologies	200	18	150 @ 11A, 10V	4 @ 250µA	67 @ 10V	1160 @ 25V	150	TO-263 (D2PAK)	Active	ROHS3 Compliant
RCJ160N20TL	Rohm Semiconductor	200	16	180 @ 8A, 10V	5.25 @ 1mA	26 @ 10V	1370 @ 25V	40	TO-263 (D2PAK)	Active	ROHS3 Compliant
STB19NF20	STMicroelectronics	200	15	160 @ 7.5A, 10V	4 @ 250µA	24 @ 10V	800 @ 25V	90	TO-263 (D2PAK)	Active	ROHS3 Compliant

Engineering Selection Recommendations

Parametric Equivalent (Direct Replacement):

IRL640SPBF is the direct parametric equivalent to IRL640S. Both devices share identical electrical specifications across all measured parameters. The primary distinction is product status: IRL640SPBF is classified as Active, whereas IRL640S is Obsolete. IRL640SPBF carries ROHS3 compliance certification, meeting current regulatory requirements. This part is the preferred selection for new designs and production requiring exact electrical equivalence with modern compliance status.

Functional Substitutes (Performance-Equivalent Alternatives):

The following parts meet or exceed the electrical requirements of IRL640S while maintaining TO-263 (D2PAK) package compatibility:

FQB19N20LTM (onsemi): Provides 21A continuous drain current with improved on-resistance (140mOhm) and reduced gate charge (35nC). Suitable for applications requiring higher current capacity or lower switching losses. Gate threshold voltage matches the original specification at 2V @ 250µA.

FQB19N20TM (onsemi): Delivers 19.4A continuous drain current with 150mOhm on-resistance and 40nC gate charge. Offers moderate performance improvement with higher gate threshold voltage (5V @ 250µA), requiring verification of gate drive compatibility in existing circuits.

IRF640NSTRLPBF (Infineon Technologies): Rated for 18A continuous drain current with 150mOhm on-resistance. Extends maximum operating temperature to 175°C (versus 150°C for IRL640S). Suitable for thermal margin applications. Gate threshold voltage of 4V @ 250µA requires gate drive circuit verification.

FQB34N20LTM (onsemi): Provides 31A continuous drain current with significantly reduced on-resistance (75mOhm). Recommended for applications requiring substantial current headroom or thermal performance improvement. Higher input capacitance (3900pF) may affect gate drive timing.

RCJ160N20TL (Rohm Semiconductor): Rated for 16A continuous drain current, marginally below the original 17A specification. On-resistance of 180mOhm matches the original device. Suitable only for applications with current margin or where lower power dissipation is acceptable. Reduced power dissipation rating (40W Tc) limits thermal performance.

STB19NF20 (STMicroelectronics): Rated for 15A continuous drain current, below the original 17A specification. On-resistance of 160mOhm provides slight improvement. Lowest input capacitance (800pF) reduces gate drive requirements. Suitable only for applications with current margin or where gate drive simplification is beneficial.

All substitute parts carry ROHS3 compliance and are classified as Active product status, ensuring long-term availability and regulatory compliance.

Frequently Asked Questions (FAQ)

Q: Can IRL640SPBF be used as a direct replacement for IRL640S in existing designs?

A: Yes. IRL640SPBF is a parametric equivalent with identical electrical specifications. The only differences are product status (Active versus Obsolete) and RoHS compliance (ROHS3 Compliant versus Non-compliant). No circuit modifications are required.

Q: What is the primary reason to substitute IRL640S with an alternative part?

A: IRL640S is classified as Obsolete. Substitution ensures access to parts with Active product status, guaranteeing long-term availability, supply chain continuity, and compliance with current regulatory standards (ROHS3).

Q: Are all substitute parts compatible with the same PCB footprint?

A: All substitute parts listed use the TO-263 (D2PAK) package, which shares the same mechanical footprint and pin configuration. Direct PCB substitution is possible without layout modifications.

Q: Which substitute part offers the best performance improvement?

A: FQB34N20LTM provides the most significant performance enhancement, with 31A continuous drain current and 75mOhm on-resistance (compared to 17A and 180mOhm for IRL640S). This part is suitable for applications requiring higher current capacity or lower thermal dissipation.

Q: Do substitute parts require gate drive circuit modifications?

A: Most substitutes operate with standard gate drive circuits. However, gate threshold voltage (Vgs(th)) varies across alternatives. FQB19N20TM, IRF640NSTRLPBF, and STB19NF20 have higher threshold voltages (4–5V) compared to IRL640S (2V). Verify gate drive voltage compatibility before implementation. FQB19N20LTM and FQB34N20LTM match the original 2V threshold voltage.

Q: Can RCJ160N20TL or STB19NF20 be used if the application requires 17A continuous current?

A: No. RCJ160N20TL is rated for 16A and STB19NF20 for 15A, both below the 17A specification of IRL640S. These parts are suitable only for applications with current margin or where lower current operation is acceptable.

Q: What is the impact of different input capacitance (Ciss) values on circuit performance?

A: Input capacitance affects gate charge and switching speed. Lower Ciss values (e.g., STB19NF20 at 800pF) reduce gate drive current requirements and switching losses. Higher Ciss values (e.g., FQB34N20LTM at 3900pF) increase gate drive requirements but do not prevent substitution in properly designed circuits.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed carry ROHS3 compliance certification, meeting current environmental and regulatory requirements. IRL640S is RoHS non-compliant, making substitution necessary for new designs subject to RoHS regulations.

Q: What is the operating temperature range difference between IRL640S and IRF640NSTRLPBF?

A: IRL640S operates from -55°C to 150°C (TJ). IRF640NSTRLPBF extends the upper limit to 175°C (TJ), providing 25°C additional thermal margin. This is beneficial for high-temperature applications but not required for standard operation.

Q: Can multiple substitute parts be used interchangeably in the same design?

A: No. Each substitute part has distinct electrical characteristics. Once a specific substitute is selected and validated for a design, that part number must be used consistently. Mixing different substitutes in the same application may result in performance variations or circuit malfunction.

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