IRL640L N-Channel MOSFET 200V 17A Equivalent & Substitute Parts

Part Overview

The IRL640L is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 200V drain-to-source voltage and 17A continuous drain current at 25°C. The device is packaged in TO-262-3 (I2PAK) configuration for through-hole mounting applications. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing production, maintenance, and new design implementations. The IRL640L operates across a temperature range of -55°C to 150°C and is RoHS non-compliant.

Substiute Parts

IRL640L
Vishay SiliconixIn Stock: 792IRL640L Datasheet
IRL640L
Current Part
FDP18N20F
onsemiIn Stock: 22792FDP18N20F Datasheet
FDP18N20F
MFR Recommended
IRF200B211
Infineon TechnologiesIn Stock: 7114IRF200B211 Datasheet
IRF200B211
MFR Recommended
IRF640NPBF
Infineon TechnologiesIn Stock: 85421IRF640NPBF Datasheet
IRF640NPBF
MFR Recommended
IRL640A
onsemiIn Stock: 1639IRL640A Datasheet
IRL640A
MFR Recommended
STP19NF20
STMicroelectronicsIn Stock: 1420STP19NF20 Datasheet
STP19NF20
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Drain to Source Voltage (Vdss) 200 V
Continuous Drain Current (Id) @ 25°C 17 A
Rds On (Max) @ Id, Vgs 180 mOhm @ 10A, 5V
Gate Threshold Voltage Vgs(th) (Max) 2 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 66 nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 1800 pF @ 25V
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole
Package TO-262-3
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IRL640L is determined by electrical and mechanical compatibility across the following critical parameters:

Electrical Compatibility Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
  • Continuous Drain Current (Id): Must equal or exceed 17A at 25°C
  • Gate Threshold Voltage (Vgs(th)): Must be compatible with 5V drive circuits
  • On-State Resistance (Rds On): Lower values indicate improved performance; values at or below 180 mOhm @ specified conditions are acceptable
  • Gate Charge (Qg): Lower values reduce switching losses
  • Input Capacitance (Ciss): Lower values improve switching speed

Mechanical Compatibility Criteria:

  • Mounting Type: Through-hole configuration required
  • Package Type: TO-262-3, TO-220-3, or TO-220AB packages are mechanically compatible with standard PCB layouts

Compliance Considerations:

  • RoHS Status: Substitute parts with ROHS3 compliance are preferred for new designs
  • Product Status: Active or Obsolete status affects long-term availability

The substitute parts listed below meet or exceed the electrical requirements of the IRL640L while offering improved specifications, enhanced compliance, or superior availability.

Parameter Comparison

Parameter IRL640L (Main) FDP18N20F IRF200B211 IRF640NPBF IRL640A STP19NF20
Manufacturer Vishay Siliconix onsemi Infineon Technologies Infineon Technologies onsemi STMicroelectronics
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Vdss (V) 200 200 200 200 200 200
Id @ 25°C (A) 17 18 12 18 18 15
Rds On (Max) (mOhm) 180 @ 10A, 5V 145 @ 9A, 10V 170 @ 7.2A, 10V 150 @ 11A, 10V 180 @ 9A, 5V 160 @ 7.5A, 10V
Vgs(th) (Max) (V) 2 @ 250µA 5 @ 250µA 4.9 @ 50µA 4 @ 250µA 2 @ 250µA 4 @ 250µA
Qg (Max) (nC) 66 @ 5V 26 @ 10V 23 @ 10V 67 @ 10V 56 @ 5V 24 @ 10V
Ciss (Max) (pF) 1800 @ 25V 1180 @ 25V 790 @ 50V 1160 @ 25V 1705 @ 25V 800 @ 25V
Operating Temperature (°C) -55 to 150 -55 to 150 -55 to 175 -55 to 175 -55 to 150 -55 to 150
Package TO-262-3 TO-220-3 TO-220AB TO-220AB TO-220-3 TO-220
Power Dissipation (W) Not specified 100 80 150 110 90
Product Status Obsolete Obsolete Active Not For New Designs Obsolete Active
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

For Active Production and New Designs:

IRF640NPBF and STP19NF20 are the primary candidates for new designs. IRF640NPBF delivers 18A continuous drain current with 150 mOhm on-state resistance, exceeding the IRL640L performance envelope. STP19NF20 provides 15A continuous drain current with 160 mOhm on-state resistance and is classified as Active product status, ensuring long-term availability. Both devices are ROHS3 compliant and operate across -55°C to 150°C or higher temperature ranges.

For Maintenance and Repair of Existing Systems:

IRL640A serves as a direct functional equivalent, offering 18A continuous drain current in TO-220-3 packaging with ROHS3 compliance. This part maintains electrical compatibility with the original IRL640L while providing improved regulatory compliance.

For Current-Limited Applications:

IRF200B211 is suitable for applications where 12A continuous drain current is sufficient. This Infineon HEXFET device operates to 175°C and carries Active product status, supporting long-term system maintenance.

Package Considerations:

The IRL640L uses TO-262-3 (I2PAK) packaging. Substitute parts employ TO-220-3 or TO-220AB packages, which require PCB layout modification. TO-220 packages have larger footprints and different lead spacing compared to TO-262-3. Thermal management characteristics differ between package types; TO-220 packages typically provide lower thermal resistance than TO-262-3 in equivalent mounting configurations.

Compliance and Availability:

All substitute parts listed are ROHS3 compliant, supporting regulatory requirements for new product designs. IRF640NPBF and STP19NF20 carry Active product status, ensuring continued manufacturing and supply chain availability. FDP18N20F and IRL640A are classified as Obsolete but remain in stock with substantial inventory levels.

Frequently Asked Questions (FAQ)

Q: Can the IRL640L be directly replaced with a TO-220 package substitute without PCB modification?

A: No. The IRL640L uses TO-262-3 (I2PAK) packaging, while substitute parts use TO-220-3 or TO-220AB packages. These packages have different lead configurations, spacing, and mounting hole patterns. PCB layout modification is required for mechanical compatibility.

Q: What is the minimum drain current rating required for a substitute part?

A: The substitute part must support a continuous drain current (Id) of at least 17A at 25°C to meet or exceed the IRL640L specification. IRF640NPBF (18A), FDP18N20F (18A), IRL640A (18A), and STP19NF20 (15A) all meet this requirement. IRF200B211 (12A) falls below this threshold and is suitable only for applications with reduced current demands.

Q: Are all substitute parts RoHS compliant?

A: All substitute parts listed carry ROHS3 compliance. The original IRL640L is RoHS non-compliant. Substitution with ROHS3-compliant parts is required for new product designs subject to RoHS regulations.

Q: What is the significance of gate threshold voltage (Vgs(th)) differences between parts?

A: Gate threshold voltage determines the gate-source voltage required to initiate conduction. The IRL640L specifies 2V maximum at 250µA, enabling operation with lower gate drive voltages. Substitute parts with higher Vgs(th) values (4V to 5V) require higher gate drive voltages. Circuit design must accommodate these differences to ensure proper switching performance.

Q: Which substitute part offers the best on-state resistance performance?

A: IRF640NPBF provides the lowest on-state resistance at 150 mOhm (@ 11A, 10V), followed by FDP18N20F at 145 mOhm (@ 9A, 10V). Lower on-state resistance reduces power dissipation and heat generation during operation. Comparison must account for the different measurement conditions specified by each manufacturer.

Q: Can the IRL640L be used in applications requiring operation above 150°C?

A: No. The IRL640L maximum operating temperature is 150°C (TJ). For applications requiring higher temperature operation, IRF640NPBF and IRF200B211 support operation to 175°C. Application thermal analysis must confirm that junction temperature remains within device specifications.

Q: What is the impact of gate charge (Qg) differences on circuit performance?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge values reduce switching losses and enable faster switching speeds. IRF200B211 and STP19NF20 exhibit significantly lower gate charge (23-24 nC) compared to the IRL640L (66 nC), resulting in improved switching efficiency and reduced electromagnetic interference in high-frequency applications.

Q: Are substitute parts available in the same TO-262-3 package?

A: No. None of the substitute parts are available in TO-262-3 packaging. All substitutes use TO-220-3 or TO-220AB packages. If TO-262-3 packaging is mandatory for mechanical or thermal reasons, alternative sourcing strategies or custom packaging solutions must be evaluated.

Q: What is the product status significance for long-term supply planning?

A: Product status indicates manufacturing and supply availability. Active status (STP19NF20, IRF200B211) ensures continued production and supply chain support. Obsolete status (IRL640L, FDP18N20F, IRL640A) indicates discontinued manufacturing; existing inventory may be available but future supply is not guaranteed. Not For New Designs status (IRF640NPBF) indicates the part is available but not recommended for new product development.

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