IRL640A N-Channel MOSFET 200V 18A TO-220-3 Equivalent & Substitute Parts

Part Overview

The IRL640A is an N-Channel MOSFET manufactured by onsemi, rated for 200V drain-to-source voltage with 18A continuous drain current at 25°C. The device is housed in a TO-220-3 through-hole package and dissipates up to 110W at the case temperature. This part is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating the through-hole TO-220 package family.

Substiute Parts

IRL640A

onsemiIn Stock: 1639IRL640A Datasheet

Current PartRFQ

FQP19N20-T

onsemiIn Stock: 717FQP19N20-T Datasheet

MFR RecommendedRFQ

IRF200B211

Infineon TechnologiesIn Stock: 7114IRF200B211 Datasheet

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IRL640PBF

Vishay SiliconixIn Stock: 15236IRL640PBF Datasheet

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Key Parameters

Substitute Part Grouping Explanation

Substitute parts for the IRL640A are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal or exceed 200V
• Continuous Drain Current (Id): Must meet or exceed 18A at 25°C
• Package Type: Must be TO-220 family (TO-220-3 or TO-220AB) for through-hole mounting compatibility
• Technology: N-Channel MOSFET (Metal Oxide)
• Operating Temperature Range: Must support -55°C to 150°C minimum

Secondary Compatibility Parameters:

• On-Resistance (Rds On): Lower values indicate improved performance
• Gate Charge (Qg): Lower values reduce switching losses
• Power Dissipation: Higher ratings provide thermal margin
• RoHS3 Compliance: Required for regulatory alignment

The substitute parts FQP19N20-T, IRF200B211, and IRL640PBF meet these criteria with varying performance enhancements and availability status.

Parameter Comparison

Engineering Selection Recommendations

FQP19N20-T (onsemi) - Recommended Primary Substitute

The FQP19N20-T is the preferred substitute for the IRL640A. Both devices are manufactured by onsemi, ensuring consistent design philosophy and supply chain alignment. The FQP19N20-T exceeds the IRL640A specifications across all critical parameters: 19.4A continuous drain current versus 18A, 140W power dissipation versus 110W, and improved on-resistance of 150 mOhm versus 180 mOhm. The device maintains identical voltage rating (200V) and operating temperature range (-55°C to 150°C). The FQP19N20-T is classified as Active product status, ensuring long-term availability and manufacturing support. Both parts are RoHS3 compliant and housed in TO-220-3 through-hole packages, enabling direct board-level substitution without layout modifications.

IRL640PBF (Vishay Siliconix) - Secondary Substitute

The IRL640PBF serves as a secondary substitute option, sharing the same base product number (IRL640) as the original part. Manufactured by Vishay Siliconix, this device delivers 17A continuous drain current and 125W power dissipation, closely matching the IRL640A electrical performance. The on-resistance specification of 180 mOhm at 10A, 5V is identical to the original part. The IRL640PBF is Active product status with extensive inventory availability (15,165 pieces). The device is housed in TO-220AB package, which is mechanically compatible with TO-220-3 through-hole mounting. RoHS3 compliance and REACH unaffected status align with regulatory requirements.

IRF200B211 (Infineon Technologies) - Limited Substitute

The IRF200B211 is classified as a similar substitute with reduced current capacity. This Infineon device is rated for 12A continuous drain current, which is below the IRL640A specification of 18A. The IRF200B211 is suitable only for applications where the actual operating current does not exceed 12A, despite the original design specification of 18A. The device offers advantages in gate charge (23 nC) and input capacitance (790 pF), reducing switching losses. Operating temperature range extends to 175°C, providing enhanced thermal margin. The IRF200B211 is Active product status with high inventory (7,044 pieces) and is housed in TO-220AB package. This substitute is appropriate for current-limited applications or as a performance optimization where thermal or switching characteristics are prioritized over current capacity.

Frequently Asked Questions (FAQ)

Q: Can the FQP19N20-T directly replace the IRL640A without circuit modifications?

A: Yes. The FQP19N20-T is electrically and mechanically compatible with the IRL640A. Both devices share identical drain-to-source voltage (200V), operating temperature range (-55°C to 150°C), and TO-220 through-hole package family. The FQP19N20-T exceeds the IRL640A current and power ratings, making it a direct upgrade. No circuit modifications are required.

Q: What is the difference between TO-220-3 and TO-220AB packages?

A: Both TO-220-3 and TO-220AB are through-hole packages with identical pin configurations and mechanical footprints. The designations refer to different manufacturing standards or supplier conventions. Devices in either package type are mechanically interchangeable on standard TO-220 PCB layouts.

Q: Why does the IRF200B211 have lower current rating than the IRL640A?

A: The IRF200B211 is a different device design from Infineon Technologies with different semiconductor geometry and thermal characteristics. While it maintains the same 200V voltage rating and TO-220 package, its continuous drain current is specified at 12A. This device is suitable only for applications where actual operating current does not exceed 12A.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. The FQP19N20-T, IRF200B211, and IRL640PBF are all RoHS3 compliant. All substitute parts meet the same regulatory requirements as the original IRL640A.

Q: What is the significance of "Active" product status for substitute parts?

A: Active product status indicates that the manufacturer continues to produce and support the device. This ensures long-term availability, consistent manufacturing quality, and access to technical documentation. The IRL640A is classified as Obsolete, meaning onsemi no longer manufactures it, making Active substitutes necessary for new designs and ongoing production.

Q: Can I use the IRL640PBF as a direct replacement if the FQP19N20-T is unavailable?

A: Yes. The IRL640PBF shares the same base product number (IRL640) and delivers comparable electrical performance to the original IRL640A. Current rating is 17A versus 18A, and power dissipation is 125W versus 110W. The IRL640PBF is suitable for direct substitution in applications where the 1A current difference does not impact circuit operation.

Q: What parameters should I verify when selecting a substitute part?

A: Verify the following parameters match or exceed the original specification: drain-to-source voltage (Vdss), continuous drain current (Id) at 25°C, power dissipation rating, operating temperature range, and package type. Secondary parameters such as on-resistance (Rds On) and gate charge (Qg) should be reviewed to confirm switching performance and thermal characteristics align with circuit requirements.

Q: Is the higher gate charge of the IRL640PBF (66 nC) a concern compared to the FQP19N20-T (40 nC)?

A: Gate charge affects switching speed and driver power requirements. The IRL640PBF requires more gate charge, which may increase switching losses and driver current demand. For applications with high switching frequencies or tight power budgets, the FQP19N20-T with lower gate charge (40 nC) is preferred. For standard switching applications, the difference is typically not significant.