IRL620 MOSFET N-Channel 200V 5.2A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRL620 is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) rated for 200V drain-to-source voltage with a continuous drain current of 5.2A at 25°C. The device is housed in a Through Hole TO-220AB package and dissipates a maximum of 50W. The IRL620 is classified as obsolete, which necessitates identification of active equivalent parts to maintain design continuity and ensure ongoing component availability for production and repair applications.

Key Parameters

Parameter	Value	Unit
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	200	V
Current - Continuous Drain (Id) @ 25°C	5.2	A (Tc)
Rds On (Max) @ Id, Vgs	800	mOhm @ 3.1A, 5V
Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16	nC @ 5V
Vgs (Max)	±10	V
Input Capacitance (Ciss) (Max) @ Vds	360	pF @ 25V
Power Dissipation (Max)	50	W (Tc)
Operating Temperature	-55 to 150	°C (TJ)
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—

Substitute Part Grouping Explanation

Substitution of the IRL620 is determined by electrical and mechanical parameter equivalence within the N-Channel MOSFET category. The critical parameters that define substitutability are:

Electrical Parameters:

Drain to Source Voltage (Vdss): 200V
Continuous Drain Current (Id) @ 25°C: 5.2A
On-State Drain Resistance (Rds On): 800mOhm @ 3.1A, 5V
Gate Threshold Voltage (Vgs(th)): 2V @ 250µA
Gate Charge (Qg): 16nC @ 5V
Maximum Gate Voltage (Vgs): ±10V
Input Capacitance (Ciss): 360pF @ 25V
Power Dissipation: 50W

Mechanical Parameters:

Mounting Type: Through Hole
Package: TO-220-3 (TO-220AB)
Operating Temperature Range: -55°C to 150°C

The IRL620PBF is identified as a direct substitute based on identical electrical specifications and mechanical packaging. The primary distinction between the IRL620 and IRL620PBF is product status and compliance certification, not functional performance.

Parameter Comparison

Parameter	IRL620	IRL620PBF	Unit
Manufacturer	Vishay Siliconix	Vishay Siliconix	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	200	200	V
Current - Continuous Drain (Id) @ 25°C	5.2	5.2	A (Tc)
Rds On (Max) @ Id, Vgs	800 @ 3.1A, 5V	800 @ 3.1A, 5V	mOhm
Vgs(th) (Max) @ Id	2 @ 250µA	2 @ 250µA	V
Gate Charge (Qg) (Max) @ Vgs	16 @ 5V	16 @ 5V	nC
Vgs (Max)	±10	±10	V
Input Capacitance (Ciss) (Max) @ Vds	360 @ 25V	360 @ 25V	pF
Power Dissipation (Max)	50	50	W (Tc)
Operating Temperature	-55 to 150	-55 to 150	°C (TJ)
Mounting Type	Through Hole	Through Hole	—
Package / Case	TO-220-3	TO-220-3	—
Product Status	Obsolete	Active	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—
ECCN	EAR99	EAR99	—
HTSUS	8541.29.0095	8541.29.0095	—

Engineering Selection Recommendations

IRL620PBF Selection Criteria:

The IRL620PBF is the direct functional equivalent of the IRL620 and is the appropriate selection for new designs and component replacement applications. The IRL620PBF maintains identical electrical performance across all specified parameters including voltage rating, current capacity, on-state resistance, and thermal characteristics.

Product Status Consideration:

The IRL620 is classified as obsolete, whereas the IRL620PBF maintains active product status with Vishay Siliconix. Active product status ensures ongoing availability, documented support, and manufacturing consistency.

Compliance Advantage:

The IRL620PBF is ROHS3 compliant, whereas the IRL620 is RoHS non-compliant. For applications subject to RoHS directives or customer requirements mandating RoHS compliance, the IRL620PBF is the required selection.

Packaging and Availability:

Both devices utilize identical TO-220-3 (TO-220AB) Through Hole packaging. The IRL620PBF is supplied in Tube packaging with significantly higher inventory availability (15,465 pieces) compared to the IRL620 (1,400 pieces).

Frequently Asked Questions (FAQ)

Q: Can the IRL620PBF be used as a direct replacement for the IRL620 in existing designs?

A: Yes. The IRL620PBF is electrically and mechanically identical to the IRL620. All electrical parameters, including voltage rating, current capacity, on-state resistance, gate charge, and thermal characteristics, are equivalent. The TO-220-3 package footprint is identical, enabling direct PCB substitution without design modification.

Q: What is the primary difference between the IRL620 and IRL620PBF?

A: The primary differences are product status and RoHS compliance. The IRL620 is obsolete and RoHS non-compliant, while the IRL620PBF is an active product with ROHS3 compliance. Electrical and mechanical specifications are identical.

Q: Are there any thermal or performance differences between these parts?

A: No. Both devices are rated for identical power dissipation (50W), operating temperature range (-55°C to 150°C), and all electrical parameters. Thermal performance is equivalent.

Q: Does the IRL620PBF require different gate drive voltage?

A: No. Both devices operate with identical gate voltage specifications. The maximum gate voltage is ±10V, and the gate threshold voltage is 2V @ 250µA for both parts.

Q: Is the TO-220AB package the same for both parts?

A: Yes. Both the IRL620 and IRL620PBF use the TO-220-3 (TO-220AB) Through Hole package. Pin configuration, lead spacing, and mounting requirements are identical.

Q: What is the Moisture Sensitivity Level (MSL) for these devices?

A: Both devices are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: Are there any export or regulatory restrictions on these parts?

A: Both devices are classified under ECCN EAR99 and HTSUS 8541.29.0095. The IRL620PBF is REACH Unaffected. No additional export restrictions apply beyond standard semiconductor regulations.

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