IRL60S216 Equivalent & Substitute Parts

Part Overview

The IRL60S216 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 195A continuous drain current at 25°C. This device is housed in a D2PAK (TO-263-3) surface mount package and is part of the HEXFET® and StrongIRFET™ series. The IRL60S216 is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing design support and production continuity.

Substiute Parts

IRL60S216

Infineon TechnologiesIn Stock: 1610IRL60S216 Datasheet

Current PartRFQ

IPB019N06L3GATMA1

Infineon TechnologiesIn Stock: 1000186IPB019N06L3GATMA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRL60S216 is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain to Source Voltage (Vdss): Must equal 60V
• Package Type: Must be TO-263-3 / D2PAK surface mount
• FET Type: Must be N-Channel MOSFET
• Gate Voltage Range (Vgs Max): Must support ±20V
• Operating Temperature Range: Must span -55°C to 175°C

Performance Parameters (Allowable Variation):

• Continuous Drain Current (Id): Substitute must meet or exceed application requirements
• Rds On (Max): Lower or equal values are acceptable
• Gate Charge (Qg): Lower values reduce switching losses
• Power Dissipation: Lower values require thermal management verification

The IPB019N06L3GATMA1 qualifies as a substitute based on matching Vdss (60V), package (TO-263-3), FET type (N-Channel), gate voltage range (±20V), and operating temperature range (-55°C to 175°C). The substitute exhibits lower continuous drain current (120A vs. 195A) and reduced power dissipation (250W vs. 375W), requiring application-level current and thermal analysis.

Parameter Comparison

Engineering Selection Recommendations

Product Status Consideration: The IRL60S216 is classified as obsolete. The IPB019N06L3GATMA1 is an active product from the same manufacturer (Infineon Technologies), ensuring continued availability and manufacturing support.

Compliance Alignment: Both components maintain ROHS3 compliance, MSL Level 1 (unlimited moisture sensitivity), and REACH unaffected status, ensuring regulatory continuity in applications subject to environmental and hazardous substance restrictions.

Electrical Compatibility: Both devices share identical Vdss (60V), Vgs (±20V), and operating temperature range (-55°C to 175°C). The substitute exhibits comparable Rds On performance (1.9 mOhm vs. 1.95 mOhm at 100A, 10V), supporting equivalent switching efficiency in gate drive circuits.

Current and Thermal Derating: The IPB019N06L3GATMA1 provides 120A continuous drain current versus the IRL60S216's 195A. Applications requiring the full 195A rating cannot use this substitute without parallel device configuration or circuit redesign. Power dissipation is reduced to 250W, requiring thermal management verification for high-power applications.

Gate Charge Reduction: The substitute exhibits lower gate charge (166 nC vs. 255 nC at 4.5V), reducing switching losses and gate drive power requirements. This characteristic may improve overall system efficiency.

Frequently Asked Questions (FAQ)

Q: Can the IPB019N06L3GATMA1 directly replace the IRL60S216 in all applications?

A: Direct replacement is limited by continuous drain current rating. The substitute supports 120A versus the original 195A. Applications operating below 120A continuous current are compatible. Applications requiring the full 195A rating require circuit modification or parallel device implementation.

Q: Are the packages physically identical?

A: Both devices use the TO-263-3 D2PAK surface mount package with identical pin configuration and thermal tab. PCB layout and footprints are interchangeable.

Q: What is the impact of lower gate charge on circuit design?

A: Lower gate charge (166 nC vs. 255 nC) reduces gate drive current requirements and switching transition time. Existing gate drive circuits designed for the IRL60S216 will operate with reduced power dissipation and faster switching characteristics when using the substitute.

Q: Are there thermal management differences?

A: The substitute has lower maximum power dissipation (250W vs. 375W). Thermal management requirements depend on application duty cycle and ambient temperature. Verify that the reduced power rating meets application thermal budgets.

Q: Is the substitute suitable for high-frequency switching applications?

A: The substitute exhibits lower gate charge and comparable Rds On characteristics, supporting high-frequency operation. Verify switching frequency compatibility with application requirements and thermal constraints.

Q: What is the availability status of each device?

A: The IRL60S216 is obsolete with limited inventory (1589 pcs reported). The IPB019N06L3GATMA1 is an active product with substantial inventory (1,000,100 pcs reported), ensuring long-term supply chain continuity.

Q: Are regulatory certifications maintained with substitution?

A: Both devices maintain ROHS3 compliance, MSL Level 1, and REACH unaffected status. Regulatory requirements are preserved with substitution.