IRL60B216 Equivalent & Substitute Parts

Part Overview

The IRL60B216 is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 60V drain-to-source voltage with 195A continuous drain current at 25°C. This device is packaged in TO-220AB through-hole configuration and is designed for high-current switching applications. The part is classified as obsolete, making equivalent substitute parts necessary for new designs and ongoing production requirements. Substitute components must maintain electrical compatibility across voltage ratings, current handling, and thermal characteristics while meeting the same packaging and compliance standards.

Substiute Parts

IRL60B216
Infineon TechnologiesIn Stock: 2203IRL60B216 Datasheet
IRL60B216
Current Part
CSD18535KCS
Texas InstrumentsIn Stock: 2018CSD18535KCS Datasheet
CSD18535KCS
MFR Recommended
STP220N6F7
STMicroelectronicsIn Stock: 3260STP220N6F7 Datasheet
STP220N6F7
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 60 V
Continuous Drain Current (Id) @ 25°C 195 A (Tc)
Rds On (Max) @ 100A, 10V 1.9 mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.4 V
Power Dissipation (Max) 375 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-220AB Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution eligibility for the IRL60B216 is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Drain to Source Voltage (Vdss): Must equal 60V
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Mounting Type: Must be Through Hole
  • Package Case: Must be TO-220-3 or TO-220AB compatible
  • Operating Temperature Range: Must support -55°C to 175°C (TJ)

Secondary Compatibility Criteria:

  • Continuous Drain Current (Id): Substitute must meet or exceed 195A at 25°C
  • Rds On (Max): Lower or equal values indicate improved performance
  • Gate Threshold Voltage (Vgs(th)): Must be within ±20V gate voltage specification
  • Power Dissipation: Must support thermal requirements of the application
  • Compliance: RoHS3 compliance and REACH unaffected status required

The identified substitute parts CSD18535KCS and STP220N6F7 meet the primary voltage and package requirements. However, differences in current ratings and thermal characteristics create distinct application scenarios.

Parameter Comparison

Parameter IRL60B216 (Infineon) CSD18535KCS (Texas Instruments) STP220N6F7 (STMicroelectronics) Unit
Manufacturer Infineon Technologies Texas Instruments STMicroelectronics
Part Number IRL60B216 CSD18535KCS STP220N6F7
Product Status Obsolete Active Active
Drain to Source Voltage (Vdss) 60 60 60 V
Continuous Drain Current (Id) @ 25°C 195 (Tc) 200 (Ta) 120 (Tc) A
Rds On (Max) @ Specified Conditions 1.9 @ 100A, 10V 2.0 @ 100A, 10V 2.0 @ 60A, 10V mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA 2.4 2.4 4.0 V
Gate Charge (Qg) (Max) 258 @ 4.5V 81 @ 10V 100 @ 10V nC
Input Capacitance (Ciss) (Max) 15570 @ 25V 6620 @ 30V 6400 @ 25V pF
Power Dissipation (Max) 375 (Tc) 300 (Tc) 237 (Tc) W
Operating Temperature Range -55 to 175 -55 to 175 -55 to 175 °C (TJ)
Package Type TO-220AB TO-220-3 TO-220
Mounting Type Through Hole Through Hole Through Hole
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected
Inventory Status 2140 Pcs New Original In Stock 2000 Pcs New Original In Stock 3200 Pcs New Original In Stock

Engineering Selection Recommendations

CSD18535KCS (Texas Instruments NexFET™)

The CSD18535KCS is the primary substitute for the IRL60B216. This device maintains the 60V voltage rating and exceeds the current specification with 200A continuous drain current. The Rds On value of 2.0 mOhm at 100A, 10V is marginally higher than the IRL60B216 (1.9 mOhm), representing a 5% increase in on-state resistance. The CSD18535KCS features significantly lower gate charge (81 nC versus 258 nC) and reduced input capacitance (6620 pF versus 15570 pF), resulting in faster switching characteristics and reduced gate drive requirements. Power dissipation is rated at 300W, which is lower than the IRL60B216 (375W). The device is in active production status with ROHS3 compliance and REACH unaffected designation. TO-220-3 packaging is mechanically compatible with TO-220AB footprints.

STP220N6F7 (STMicroelectronics STripFET™ F7)

The STP220N6F7 is a secondary substitute option suitable for applications where the 120A continuous drain current specification is sufficient. This device maintains the 60V voltage rating and TO-220 packaging. The Rds On value of 2.0 mOhm is measured at 60A, 10V, which differs from the reference measurement point. Gate threshold voltage is specified at 4.0V, which is higher than the IRL60B216 (2.4V), indicating different gate drive characteristics. Gate charge and input capacitance are comparable to the CSD18535KCS. Power dissipation is rated at 237W. The device is in active production status with ROHS3 compliance and REACH unaffected designation. This substitute is appropriate for lower-current applications or where thermal management is less demanding.

Selection Basis:

Both substitute parts satisfy the mandatory electrical and mechanical compatibility criteria: 60V Vdss, N-Channel MOSFET technology, through-hole mounting, -55°C to 175°C operating temperature range, ROHS3 compliance, and REACH unaffected status. The CSD18535KCS is recommended as the primary substitute due to current rating alignment and active product status. The STP220N6F7 is suitable for current-limited applications. Both devices are in active production, ensuring long-term availability compared to the obsolete IRL60B216.

Frequently Asked Questions (FAQ)

Q: Can the CSD18535KCS directly replace the IRL60B216 in existing designs?

A: The CSD18535KCS is electrically compatible with the IRL60B216 across the primary parameters: 60V Vdss, N-Channel MOSFET, through-hole TO-220-3 packaging, and -55°C to 175°C operating temperature. The 200A current rating exceeds the 195A requirement. The Rds On increase of 5% (1.9 mOhm to 2.0 mOhm) is within typical design margins. Gate charge reduction improves switching performance. Mechanical compatibility with TO-220AB footprints is confirmed. Thermal design review is recommended due to the 75W reduction in power dissipation rating.

Q: What are the key differences between CSD18535KCS and STP220N6F7?

A: The CSD18535KCS provides 200A continuous drain current, matching the IRL60B216 current class. The STP220N6F7 provides 120A, suitable for lower-current applications. Gate threshold voltage differs: CSD18535KCS at 2.4V matches the IRL60B216, while STP220N6F7 is specified at 4.0V, requiring different gate drive voltage levels. Gate charge is lower in both substitutes compared to the IRL60B216, improving switching speed. Power dissipation ratings are 300W (CSD18535KCS) and 237W (STP220N6F7) versus 375W (IRL60B216).

Q: Are the TO-220-3 and TO-220AB packages mechanically interchangeable?

A: TO-220-3 and TO-220AB are mechanically compatible for through-hole PCB mounting. Both use three leads with identical pin spacing and hole diameter specifications. The primary difference is in the mounting tab design and thermal interface characteristics. PCB layout modifications are not required for package substitution.

Q: What compliance certifications apply to the substitute parts?

A: Both CSD18535KCS and STP220N6F7 are ROHS3 compliant and REACH unaffected. These certifications match the IRL60B216 compliance status, ensuring regulatory compatibility in applications subject to RoHS and REACH requirements.

Q: How does the gate charge difference affect circuit design?

A: The IRL60B216 specifies 258 nC gate charge at 4.5V. The CSD18535KCS specifies 81 nC at 10V, and STP220N6F7 specifies 100 nC at 10V. Lower gate charge reduces the energy required to switch the device and decreases gate drive circuit stress. Gate driver selection should be reviewed to confirm adequate current sourcing capability, though the lower charge requirement typically reduces design constraints.

Q: What is the impact of reduced input capacitance on circuit performance?

A: The IRL60B216 specifies 15570 pF input capacitance at 25V. The CSD18535KCS specifies 6620 pF at 30V, and STP220N6F7 specifies 6400 pF at 25V. Reduced input capacitance decreases the RC time constant in gate drive circuits, enabling faster switching transitions and reducing switching losses. This improvement is particularly beneficial in high-frequency switching applications.

Q: Is the 75W reduction in power dissipation rating a concern?

A: The IRL60B216 is rated for 375W power dissipation, while the CSD18535KCS is rated for 300W. This difference reflects different thermal measurement conditions and device design. Actual power dissipation in the application depends on Rds On, current, and duty cycle. The 5% increase in Rds On (1.9 to 2.0 mOhm) results in proportionally higher conduction losses. Thermal analysis of the specific application is required to confirm adequate heat dissipation with the substitute device.

Q: Why is the IRL60B216 classified as obsolete?

A: Product obsolescence is determined by the manufacturer based on market demand, technology advancement, and production economics. The IRL60B216 has been superseded by newer MOSFET designs with improved performance characteristics, such as lower gate charge and reduced input capacitance. The substitute parts CSD18535KCS and STP220N6F7 represent current-generation alternatives with enhanced switching efficiency.

Q: Can both substitute parts be used interchangeably in the same application?

A: The CSD18535KCS and STP220N6F7 are not interchangeable due to different current ratings (200A versus 120A) and gate threshold voltages (2.4V versus 4.0V). Selection depends on the application's current requirements and gate drive voltage levels. The CSD18535KCS is recommended for applications requiring 195A+ current handling. The STP220N6F7 is suitable for applications with lower current demands.

Request Quote (Ships tomorrow)