IRL540STRR N-Channel MOSFET 100V 28A Equivalent & Substitute Parts

Part Overview

The IRL540STRR is an N-Channel Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 28A continuous drain current at 25°C. The device is housed in a Surface Mount TO-263 (D2PAK) package and is classified as Active product status. This component is used in switching applications, power conversion circuits, and general-purpose switching where N-Channel MOSFETs with 100V ratings are required. Equivalent and substitute parts are identified based on matching electrical parameters including drain-to-source voltage, continuous drain current capability, on-resistance characteristics, and package compatibility.

Substiute Parts

IRL540STRR
Vishay SiliconixIn Stock: 789IRL540STRR Datasheet
IRL540STRR
Current Part
IRL540SPBF
Vishay SiliconixIn Stock: 1205IRL540SPBF Datasheet
IRL540SPBF
MFR Recommended
IRL540STRLPBF
Vishay SiliconixIn Stock: 1144IRL540STRLPBF Datasheet
IRL540STRLPBF
Parametric Equivalent
BUK9675-100A,118
Nexperia USA Inc.In Stock: 15057BUK9675-100A,118 Datasheet
BUK9675-100A,118
MFR Recommended
IRF530NSTRLPBF
Infineon TechnologiesIn Stock: 67161IRF530NSTRLPBF Datasheet
IRF530NSTRLPBF
MFR Recommended
IRL540NSTRLPBF
Infineon TechnologiesIn Stock: 16595IRL540NSTRLPBF Datasheet
IRL540NSTRLPBF
MFR Recommended

Key Parameters

Parameter Value Unit
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 28 A (Tc)
Rds On (Max) @ Id, Vgs 77 mOhm @ 17A, 5V
Vgs(th) (Max) @ Id 2 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 64 nC @ 5V
Vgs (Max) ±10 V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 25V
Power Dissipation (Max) 3.7 (Ta), 150 (Tc) W
Operating Temperature -55 to 175 °C (TJ)
Mounting Type Surface Mount
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Substitute Part Grouping Explanation

Substitute parts for the IRL540STRR are identified based on the following critical parameters that determine functional equivalence:

Primary Matching Criteria:

  • Drain to Source Voltage (Vdss): 100V
  • Package Type: TO-263 (D2PAK) Surface Mount
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Operating Temperature Range: -55°C to 175°C

Secondary Compatibility Factors:

  • Continuous Drain Current (Id): Parts with equal or greater current rating
  • On-Resistance (Rds On): Lower or equivalent values ensure compatible switching performance
  • Gate Charge (Qg): Similar values maintain consistent gate drive requirements
  • Input Capacitance (Ciss): Comparable values support equivalent circuit behavior

Substitutes are grouped into two categories: Parametric Equivalents (identical electrical specifications and packaging) and Functional Alternatives (same voltage and package ratings with variations in current handling or on-resistance characteristics).

Parameter Comparison

Parameter IRL540STRR (Main) IRL540SPBF IRL540STRLPBF BUK9675-100A,118 IRF530NSTRLPBF IRL540NSTRLPBF
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Nexperia USA Inc. Infineon Technologies Infineon Technologies
Vdss (V) 100 100 100 100 100 100
Id @ 25°C (A) 28 28 28 23 17 36
Rds On (Max) (mOhm) 77 @ 17A, 5V 77 @ 17A, 5V 77 @ 17A, 5V 72 @ 10A, 10V 90 @ 9A, 10V 44 @ 18A, 10V
Vgs(th) (Max) (V) 2 @ 250µA 2 @ 250µA 2 @ 250µA 2 @ 1mA 4 @ 250µA 2 @ 250µA
Gate Charge Qg (nC) 64 @ 5V 64 @ 5V 64 @ 5V 37 @ 10V 74 @ 5V
Ciss (Max) (pF) 2200 @ 25V 2200 @ 25V 2200 @ 25V 1704 @ 25V 920 @ 25V 1800 @ 25V
Power Dissipation (W) 3.7 (Ta), 150 (Tc) 3.7 (Ta), 150 (Tc) 3.7 (Ta), 150 (Tc) 99 (Tc) 3.8 (Ta), 70 (Tc) 3.8 (Ta), 140 (Tc)
Operating Temp (°C) -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175 -55 to 175
Package TO-263 (D2PAK) TO-263 (D2PAK) TO-263 (D2PAK) D2PAK D2PAK D2PAK
RoHS Status Non-compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant
Product Status Active Active Active Active Active Active

Engineering Selection Recommendations

Parametric Equivalents (Direct Substitutes):

IRL540SPBF and IRL540STRLPBF are parametric equivalents to the IRL540STRR. All three parts share identical electrical specifications including 100V Vdss, 28A continuous drain current, 77mOhm on-resistance, and TO-263 (D2PAK) packaging. The primary differences are packaging format (Tube for IRL540SPBF versus Tape & Reel for IRL540STRLPBF) and RoHS compliance status. Both substitute parts are ROHS3 Compliant, whereas the main part is RoHS non-compliant. These parts are suitable for direct replacement in applications where packaging format and compliance requirements align with system specifications.

Functional Alternatives:

IRL540NSTRLPBF (Infineon Technologies) provides higher current capability at 36A continuous drain current with lower on-resistance (44mOhm @ 18A, 10V), making it suitable for applications requiring enhanced current handling. This part maintains 100V Vdss and D2PAK packaging but features HEXFET® technology and ROHS3 compliance.

BUK9675-100A,118 (Nexperia USA Inc.) is rated for 23A continuous drain current with 72mOhm on-resistance and includes automotive-grade qualification (AEC-Q101). This part is suitable for automotive applications and provides lower input capacitance (1704pF) compared to the main part.

IRF530NSTRLPBF (Infineon Technologies) is rated for 17A continuous drain current with 90mOhm on-resistance. This part features lower input capacitance (920pF) and gate charge (37nC), making it suitable for applications with reduced gate drive requirements or where lower capacitance is beneficial.

Compliance Considerations:

All substitute parts listed are ROHS3 Compliant and carry Active product status. The main part (IRL540STRR) is RoHS non-compliant. Selection should account for regulatory requirements and end-application compliance mandates.

Frequently Asked Questions (FAQ)

Q: Can IRL540SPBF directly replace IRL540STRR in existing designs?

A: Yes. IRL540SPBF is a parametric equivalent with identical electrical specifications (100V, 28A, 77mOhm Rds On) and TO-263 (D2PAK) packaging. The primary difference is packaging format (Tube versus the original format) and RoHS3 compliance status. Electrical performance and pin configuration are identical.

Q: What is the difference between IRL540STRLPBF and IRL540SPBF?

A: Both parts are parametric equivalents with identical electrical specifications. The difference is packaging format: IRL540STRLPBF is supplied in Tape & Reel (TR) format, while IRL540SPBF is supplied in Tube format. Both are ROHS3 Compliant and suitable for direct substitution based on electrical performance.

Q: When should IRL540NSTRLPBF be selected instead of the main part?

A: IRL540NSTRLPBF should be selected when applications require higher continuous drain current (36A versus 28A) or lower on-resistance (44mOhm versus 77mOhm). This part is manufactured by Infineon Technologies and features HEXFET® technology. It maintains 100V Vdss and D2PAK packaging compatibility.

Q: Is IRF530NSTRLPBF suitable for applications requiring 28A continuous current?

A: No. IRF530NSTRLPBF is rated for 17A continuous drain current, which is below the 28A requirement of the main part. This part is suitable only for applications with lower current requirements. It should not be used as a direct substitute where 28A capability is required.

Q: What are the advantages of BUK9675-100A,118 for automotive applications?

A: BUK9675-100A,118 carries AEC-Q101 automotive qualification and is manufactured by Nexperia USA Inc. It provides 23A continuous drain current with 72mOhm on-resistance and lower input capacitance (1704pF). This part is suitable for automotive-grade applications where regulatory qualification is required, though it provides slightly lower current capability than the main part.

Q: Are all substitute parts available in the same D2PAK package?

A: Yes. All substitute parts listed are housed in TO-263 (D2PAK) or equivalent D2PAK Surface Mount packages, ensuring mechanical and thermal compatibility with the main part's footprint and mounting requirements.

Q: What is the impact of different gate charge specifications on circuit design?

A: Gate charge (Qg) affects gate drive circuit requirements. The main part and most Vishay equivalents specify 64nC @ 5V. IRF530NSTRLPBF specifies 37nC @ 10V (lower charge, faster switching), while IRL540NSTRLPBF specifies 74nC @ 5V (slightly higher charge). These differences may require gate drive circuit adjustments but do not prevent substitution in most applications.

Q: Should RoHS compliance status influence part selection?

A: Yes. The main part (IRL540STRR) is RoHS non-compliant, while all listed substitutes are ROHS3 Compliant. Applications subject to RoHS regulations or customer requirements mandating RoHS compliance should select from the compliant substitute parts (IRL540SPBF, IRL540STRLPBF, BUK9675-100A,118, IRF530NSTRLPBF, or IRL540NSTRLPBF).

Q: Can parts with different manufacturers be interchanged in production?

A: Yes, provided electrical specifications and package compatibility are verified. The main part is manufactured by Vishay Siliconix, while substitutes include parts from Nexperia USA Inc. and Infineon Technologies. All parts maintain 100V Vdss, D2PAK packaging, and -55°C to 175°C operating temperature range. Qualification and testing protocols should be followed per system requirements.

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