IRL540 N-Channel MOSFET 100V 28A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRL540 is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage and 28A continuous drain current in a Through Hole TO-220AB package. This device is classified as obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts must maintain electrical compatibility across critical parameters including voltage rating, current capacity, and thermal characteristics while accommodating packaging and compliance variations.

Substiute Parts

IRL540

Vishay SiliconixIn Stock: 1695IRL540 Datasheet

Current PartRFQ

IRL540PBF

Vishay SiliconixIn Stock: 3127IRL540PBF Datasheet

DirectRFQ

IRF540ZPBF

Infineon TechnologiesIn Stock: 17531IRF540ZPBF Datasheet

DirectRFQ

IRL540NPBF

Infineon TechnologiesIn Stock: 21433IRL540NPBF Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution eligibility for the IRL540 is determined by the following critical parameters:

Mandatory Compatibility Criteria:

• Drain to Source Voltage (Vdss): 100V minimum
• N-Channel FET topology
• Through Hole mounting configuration
• TO-220-3 package format
• Operating temperature range: -55°C to 175°C (TJ)

Performance Considerations:

• Continuous drain current (Id) at 25°C: 28A or greater
• On-state resistance (Rds On): Lower values indicate improved performance
• Power dissipation capability: 150W or greater preferred for thermal margin
• Gate charge and input capacitance: Secondary parameters affecting switching characteristics

Substitute parts are classified into two categories:

Direct Equivalents: Parts maintaining identical electrical specifications and base product number (IRL540 series).

Functional Substitutes: Parts with enhanced electrical performance (higher current rating, lower Rds On, or improved power dissipation) while maintaining voltage class and package compatibility.

Parameter Comparison

Engineering Selection Recommendations

IRL540PBF (Direct Equivalent - Preferred Primary Substitute)

The IRL540PBF is the direct equivalent of the obsolete IRL540, manufactured by Vishay Siliconix with identical electrical specifications. This part maintains 100V Vdss, 28A continuous drain current, 77 mOhm Rds On, and 150W power dissipation. The IRL540PBF is classified as Active product status with ROHS3 compliance, providing long-term availability and regulatory alignment. Packaging is specified as Tube format with 3100 units in stock. This substitute requires no circuit redesign and provides direct pin-compatible replacement.

IRL540NPBF (Manufacturer-Recommended Substitute)

The IRL540NPBF is designated as the manufacturer-recommended substitute, manufactured by Infineon Technologies under the HEXFET® series. This part maintains 100V Vdss and increases continuous drain current to 36A, providing 28% higher current capacity. On-state resistance is 44 mOhm at 18A and 10V gate voltage, representing improved efficiency compared to the original 77 mOhm specification. Power dissipation is rated at 140W, slightly lower than the original 150W but sufficient for equivalent thermal management in most applications. Gate voltage range extends to ±16V, and input capacitance is reduced to 1800 pF. ROHS3 compliance and Active product status ensure regulatory conformance and procurement continuity. Inventory availability is 21332 units.

IRF540ZPBF (Performance-Enhanced Substitute)

The IRF540ZPBF, manufactured by Infineon Technologies as part of the HEXFET® series, provides enhanced electrical performance with 100V Vdss and 36A continuous drain current. This part features the lowest on-state resistance at 26.5 mOhm (@ 22A, 10V), delivering superior efficiency and reduced power dissipation in switching applications. Gate voltage range extends to ±20V with gate charge of 63 nC at 10V. Input capacitance is 1770 pF, the lowest among all substitutes. Power dissipation is rated at 92W, reflecting the improved efficiency characteristics. ROHS3 compliance and Active product status are confirmed. Inventory availability is 17422 units. This substitute is suitable for applications where reduced conduction losses and improved thermal performance are beneficial.

Compliance and Availability Considerations

All three substitute parts are ROHS3 compliant, addressing regulatory requirements that the original IRL540 (RoHS non-compliant) does not meet. All substitutes maintain Active product status, ensuring long-term procurement availability and manufacturer support. The IRL540PBF provides the most direct replacement path with identical specifications. The IRL540NPBF and IRF540ZPBF offer enhanced performance characteristics suitable for designs requiring improved efficiency or higher current capacity within the same voltage class and package format.

Frequently Asked Questions (FAQ)

Q: Can the IRL540PBF be used as a direct replacement for the IRL540?

A: Yes. The IRL540PBF is electrically identical to the IRL540, with matching Vdss (100V), Id (28A), Rds On (77 mOhm @ 17A, 5V), and power dissipation (150W). Both are manufactured by Vishay Siliconix and use the TO-220-3 package. The primary difference is product status: IRL540PBF is Active with ROHS3 compliance, while the original IRL540 is Obsolete and RoHS non-compliant. No circuit modifications are required.

Q: What are the key differences between IRL540NPBF and IRF540ZPBF?

A: Both parts maintain 100V Vdss and increase continuous drain current to 36A. The IRF540ZPBF features lower on-state resistance (26.5 mOhm vs. 44 mOhm), resulting in reduced conduction losses and improved efficiency. The IRF540ZPBF also has lower input capacitance (1770 pF vs. 1800 pF) and extended gate voltage range (±20V vs. ±16V). The IRL540NPBF offers higher power dissipation capability (140W vs. 92W), which may be advantageous in applications with significant thermal constraints. Both are ROHS3 compliant and Active products.

Q: Are all substitute parts compatible with the original TO-220-3 package footprint?

A: Yes. All substitute parts (IRL540PBF, IRL540NPBF, and IRF540ZPBF) use the TO-220-3 package format with Through Hole mounting. PCB footprints and thermal management approaches remain identical to the original IRL540. No layout modifications are necessary.

Q: Which substitute part should be selected for new designs?

A: For new designs, either IRL540PBF or IRL540NPBF is recommended. The IRL540PBF provides direct electrical equivalence to the original specification. The IRL540NPBF offers enhanced current capacity (36A vs. 28A) and improved on-state resistance (44 mOhm vs. 77 mOhm) while maintaining compatibility. Both are ROHS3 compliant and have strong inventory availability. The IRF540ZPBF is suitable when maximum efficiency and lowest conduction losses are design priorities.

Q: What is the impact of different Rds On values on circuit performance?

A: On-state resistance directly affects conduction losses and heat generation. The IRL540 and IRL540PBF specify 77 mOhm, while IRL540NPBF specifies 44 mOhm, and IRF540ZPBF specifies 26.5 mOhm. Lower Rds On values reduce I²R losses during conduction, decreasing power dissipation and junction temperature. In high-frequency switching applications or designs operating near thermal limits, substitutes with lower Rds On (IRL540NPBF or IRF540ZPBF) provide improved performance and reliability margins.

Q: Are there any gate drive voltage considerations when substituting these parts?

A: Yes. The original IRL540 and IRL540PBF specify Vgs (Max) of ±10V. The IRL540NPBF extends this to ±16V, and IRF540ZPBF extends to ±20V. Existing gate drive circuits designed for ±10V operation remain compatible with all substitutes. However, if gate drive circuits are capable of higher voltages, the IRL540NPBF and IRF540ZPBF can be driven at higher gate voltages to achieve lower on-state resistance and improved switching performance.

Q: What is the significance of the HEXFET® designation on Infineon parts?

A: HEXFET® is Infineon's proprietary technology designation for high-efficiency power MOSFETs. Parts designated as HEXFET® (IRL540NPBF and IRF540ZPBF) incorporate advanced manufacturing processes that deliver improved electrical characteristics, including lower on-state resistance and reduced gate charge compared to conventional MOSFET designs. This designation indicates enhanced performance within the specified voltage and current ratings.

Q: Are all substitute parts RoHS compliant?

A: Yes. All three substitute parts (IRL540PBF, IRL540NPBF, and IRF540ZPBF) are ROHS3 compliant. The original IRL540 is RoHS non-compliant. For applications subject to RoHS regulations or customer requirements, any of the three substitutes satisfy compliance requirements.

Q: What inventory considerations should be evaluated?

A: Current inventory levels are: IRL540PBF (3100 units), IRL540NPBF (21332 units), and IRF540ZPBF (17422 units). All substitutes have substantial stock availability. For procurement planning, IRL540NPBF and IRF540ZPBF offer higher inventory levels, reducing lead time risk for high-volume production requirements.