IRL520STRR Equivalent & Substitute Parts

Part Overview

The IRL520STRR is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 9.2A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is classified as Active product status. This component is suitable for switching and amplification applications requiring moderate current handling in compact form factors.

Identification of substitute parts becomes necessary when the primary part reaches end-of-life status, inventory constraints occur, or design requirements mandate compliance with current regulatory standards such as RoHS3. The IRL520STRR is RoHS non-compliant, making substitution critical for new designs targeting modern environmental regulations.

Substiute Parts

IRL520STRR
Vishay SiliconixIn Stock: 1154IRL520STRR Datasheet
IRL520STRR
Current Part
IRL520NSTRLPBF
Infineon TechnologiesIn Stock: 2289IRL520NSTRLPBF Datasheet
IRL520NSTRLPBF
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 9.2 A
Rds On (Max) @ Id, Vgs 270 mOhm @ 5.5A, 5V mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id 2 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 490 pF @ 25V
Power Dissipation (Max) 3.7 (Ta), 60 (Tc) W
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-263 (D2PAK) Surface Mount
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRL520STRR is determined by strict electrical and mechanical parameter compatibility within the N-Channel MOSFET category. The following parameters establish the substitution criteria:

Critical Matching Parameters:

  • Drain to Source Voltage (Vdss): Must equal or exceed 100V
  • Package Type: Must be TO-263 (D2PAK) Surface Mount
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Operating Temperature Range: Must support -55°C to 175°C (TJ)

Performance Parameters (Allowable Variation):

  • Continuous Drain Current (Id): Substitute must meet or exceed 9.2A
  • Rds On (Max): Substitute must not exceed the on-resistance specification at rated conditions
  • Gate Charge (Qg): Substitute specifications are acceptable within device switching characteristics
  • Input Capacitance (Ciss): Substitute specifications are acceptable within device switching characteristics

The IRL520NSTRLPBF qualifies as a direct substitute based on matching voltage rating, package configuration, and temperature range, while providing improved electrical performance and current compliance status.

Parameter Comparison

Parameter IRL520STRR (Main Part) IRL520NSTRLPBF (Substitute) Unit
Manufacturer Vishay Siliconix Infineon Technologies
Drain to Source Voltage (Vdss) 100 100 V
Continuous Drain Current (Id) @ 25°C 9.2 10 A
Rds On (Max) @ Id, Vgs 270 mOhm @ 5.5A, 5V 180 mOhm @ 6A, 10V mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id 2 2 V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 12 20 nC @ 5V
Vgs (Max) ±10 ±16 V
Input Capacitance (Ciss) (Max) @ Vds 490 440 pF @ 25V
Power Dissipation (Max) 3.7 (Ta), 60 (Tc) 3.8 (Ta), 48 (Tc) W
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Package Type TO-263 (D2PAK) TO-263 (D2PAK) Surface Mount
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Product Status Active Not For New Designs
RoHS Status RoHS non-compliant ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

For Active Designs: The IRL520STRR remains the primary selection for applications where RoHS non-compliance is acceptable and Vishay Siliconix component qualification is required. The device is in Active product status with 1113 units in stock.

For RoHS3 Compliant Designs: The IRL520NSTRLPBF is the appropriate substitute when regulatory compliance with ROHS3 standards is mandatory. This part meets all critical electrical parameters and maintains identical package configuration. The substitute provides improved on-resistance performance (180 mOhm versus 270 mOhm) and higher continuous drain current rating (10A versus 9.2A), resulting in reduced thermal dissipation in equivalent applications.

Product Status Consideration: The IRL520NSTRLPBF carries "Not For New Designs" status, indicating Infineon has transitioned this product line. However, it remains electrically and mechanically compatible for direct substitution in existing designs requiring RoHS3 compliance. For new design initiatives, consultation with component suppliers regarding current-generation alternatives is advised.

Compliance and Certification: The IRL520NSTRLPBF is REACH Unaffected and ROHS3 Compliant, meeting modern environmental and regulatory requirements. Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications.

Frequently Asked Questions (FAQ)

Q: Can the IRL520NSTRLPBF directly replace the IRL520STRR in existing PCB layouts?

A: Yes. Both devices use identical TO-263 (D2PAK) Surface Mount packaging with matching pin configurations. No PCB layout modifications are required for direct substitution.

Q: What are the key electrical differences between these parts?

A: The IRL520NSTRLPBF provides superior on-resistance performance (180 mOhm at 10V gate drive versus 270 mOhm at 5V gate drive for the IRL520STRR) and higher continuous drain current (10A versus 9.2A). Both maintain the same 100V voltage rating and operating temperature range.

Q: Is the IRL520NSTRLPBF suitable for new product designs?

A: The IRL520NSTRLPBF carries "Not For New Designs" status from Infineon. While electrically and mechanically compatible for substitution in existing designs, new designs should evaluate current-generation MOSFET offerings from component suppliers.

Q: What is the significance of RoHS3 compliance?

A: RoHS3 compliance indicates the IRL520NSTRLPBF meets current European Union Restriction of Hazardous Substances regulations. The IRL520STRR is RoHS non-compliant, making the substitute necessary for applications subject to RoHS3 requirements.

Q: Are there any gate drive voltage differences I should consider?

A: The IRL520NSTRLPBF supports ±16V maximum gate voltage compared to ±10V for the IRL520STRR. This provides greater design margin in gate drive circuits. The substitute achieves lower on-resistance when driven at 10V versus the main part's 5V specification.

Q: Do both parts have identical moisture sensitivity?

A: Yes. Both the IRL520STRR and IRL520NSTRLPBF are rated MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

Q: What is the impact of the higher gate charge specification in the substitute?

A: The IRL520NSTRLPBF specifies 20 nC gate charge at 5V compared to 12 nC for the IRL520STRR. This results in slightly longer switching times but remains acceptable for most switching applications. Gate drive circuits must supply adequate current to charge the gate within required switching speed parameters.

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