IRL520STRL Equivalent & Substitute Parts

Part Overview

The IRL520STRL is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 9.2A continuous drain current. The device is housed in a Surface Mount TO-263 (D2PAK) package and is classified as Active product status. This component is suitable for switching applications requiring moderate current handling and voltage isolation in compact form factors.

The IRL520STRL is RoHS non-compliant. Equivalent substitute parts are available that maintain electrical and mechanical compatibility while offering improved compliance certifications and performance characteristics.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	9.2	A
Rds On (Max) @ Id, Vgs	270 mOhm @ 5.5A, 5V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12	nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	490	pF @ 25V
Power Dissipation (Max)	3.7 (Ta), 60 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	—
Package / Case	TO-263-3, D2PAK	—
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRL520STRL is determined by strict equivalence across the following critical parameters:

Electrical Compatibility Requirements:

Drain to Source Voltage (Vdss): Must equal or exceed 100V
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Gate Threshold Voltage: Must be compatible at specified test conditions
Operating Temperature Range: Must span -55°C to 175°C (TJ)

Mechanical Compatibility Requirements:

Mounting Type: Must be Surface Mount
Package / Case: Must be TO-263-3, D2PAK (2 Leads + Tab), or TO-263AB

Performance Considerations:

Continuous Drain Current (Id): Substitute must meet or exceed 9.2A
Rds On (Max): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed

The IRL520NSTRLPBF meets all electrical and mechanical compatibility criteria and is qualified as a direct substitute.

Parameter Comparison

Parameter	IRL520STRL (Main Part)	IRL520NSTRLPBF (Substitute)	Unit
Manufacturer	Vishay Siliconix	Infineon Technologies	—
FET Type	N-Channel	N-Channel	—
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	—
Drain to Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	9.2	10	A
Rds On (Max) @ Id, Vgs	270 mOhm @ 5.5A, 5V	180 mOhm @ 6A, 10V	mOhm
Gate Threshold Voltage Vgs(th) (Max) @ Id	2	2	V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12	20	nC @ 5V
Vgs (Max)	±10	±16	V
Input Capacitance (Ciss) (Max) @ Vds	490	440	pF @ 25V
Power Dissipation (Max)	3.7 (Ta), 60 (Tc)	3.8 (Ta), 48 (Tc)	W
Operating Temperature Range	-55 to 175	-55 to 175	°C (TJ)
Mounting Type	Surface Mount	Surface Mount	—
Package / Case	TO-263-3, D2PAK	TO-263-3, D2PAK	—
Product Status	Active	Not For New Designs	—
RoHS Status	RoHS non-compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

IRL520STRL (Main Part):

Product Status: Active
RoHS Compliance: Non-compliant
Use in applications where RoHS compliance is not required and active product support is necessary

IRL520NSTRLPBF (Substitute):

Product Status: Not For New Designs
RoHS Compliance: ROHS3 Compliant
REACH Status: REACH Unaffected
Use in applications requiring RoHS3 compliance and environmental regulation adherence
Not recommended for new design implementations due to product status classification

Both parts maintain identical electrical and mechanical compatibility. Selection between the two depends on regulatory compliance requirements and product lifecycle considerations. The IRL520NSTRLPBF offers superior RoHS compliance and lower on-resistance characteristics, while the IRL520STRL maintains active product status for ongoing support.

Frequently Asked Questions (FAQ)

Q: Can the IRL520NSTRLPBF directly replace the IRL520STRL in existing designs?

A: Yes. Both devices share identical Drain to Source Voltage (100V), N-Channel FET type, MOSFET technology, gate threshold voltage, operating temperature range (-55°C to 175°C), and TO-263 D2PAK package configuration. The IRL520NSTRLPBF provides equal or superior electrical performance with lower on-resistance (180 mOhm vs. 270 mOhm) and improved RoHS compliance.

Q: What are the key differences between these two parts?

A: The primary differences are: (1) Manufacturer—Vishay Siliconix versus Infineon Technologies; (2) Continuous Drain Current—9.2A versus 10A; (3) On-Resistance—270 mOhm versus 180 mOhm; (4) Gate Charge—12 nC versus 20 nC; (5) RoHS Status—non-compliant versus ROHS3 compliant; (6) Product Status—Active versus Not For New Designs.

Q: Are there any package compatibility concerns?

A: No. Both parts use identical Surface Mount TO-263-3 D2PAK (2 Leads + Tab) packaging. PCB footprints, thermal characteristics, and mechanical mounting are fully compatible.

Q: Which part should be selected for new product designs?

A: The IRL520STRL is classified as Active product status and is suitable for new designs. The IRL520NSTRLPBF carries a "Not For New Designs" status and should not be selected for new product implementations.

Q: What is the impact of the different Gate Charge specifications?

A: The IRL520STRL has lower gate charge (12 nC versus 20 nC), resulting in faster switching transitions and reduced gate drive power requirements. This difference may be significant in high-frequency switching applications.

Q: Does the lower on-resistance of the IRL520NSTRLPBF provide practical benefits?

A: Yes. The IRL520NSTRLPBF exhibits 33% lower on-resistance (180 mOhm versus 270 mOhm), resulting in reduced conduction losses and lower junction temperature rise during operation. This improves thermal performance and efficiency in power dissipation-sensitive applications.

Q: Are moisture sensitivity levels identical?

A: Yes. Both parts are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions for storage or handling.

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