IRL520S MOSFET N-Channel 100V 9.2A Equivalent & Substitute Parts

Part Overview

The IRL520S is an N-Channel MOSFET manufactured by Vishay Siliconix, rated for 100V drain-to-source voltage with 9.2A continuous drain current in a Surface Mount D2PAK package. This device is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing production and maintenance applications. The part operates across a wide temperature range from -55°C to 175°C junction temperature and is RoHS non-compliant, reflecting its legacy status in the component market.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	100	V
Continuous Drain Current (Id) @ 25°C	9.2	A
On-Resistance (Rds On Max) @ Id, Vgs	270 mOhm @ 5.5A, 5V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	2	V @ 250µA
Gate Charge (Qg Max) @ Vgs	12	nC @ 5V
Maximum Gate Voltage (Vgs Max)	±10	V
Input Capacitance (Ciss Max) @ Vds	490	pF @ 25V
Power Dissipation (Max)	3.7 (Ta), 60 (Tc)	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-263-3 (D2PAK)	Surface Mount
Product Status	Obsolete	—
RoHS Compliance	Non-compliant	—

Substitute Part Grouping Explanation

Substitution of the IRL520S requires matching of critical electrical and mechanical parameters that define functional equivalence in MOSFET applications. The primary substitution criteria are:

Electrical Parameters (Must Match or Exceed):

Drain-to-Source Voltage (Vdss): 100V minimum
Continuous Drain Current (Id): 9.2A minimum at 25°C
Gate Threshold Voltage (Vgs(th)): Compatible threshold for drive circuit operation
On-Resistance (Rds On): Lower or equivalent values ensure thermal performance
Maximum Gate Voltage (Vgs Max): Must accommodate drive voltage levels

Mechanical Parameters (Must Match):

Package Type: TO-263-3 (D2PAK) Surface Mount configuration
Pin Configuration: 2 Leads + Tab arrangement
Mounting Type: Surface Mount compatibility

Compliance Parameters:

Operating Temperature Range: -55°C to 175°C (TJ) minimum
Moisture Sensitivity Level (MSL): Level 1 (Unlimited)

The IRL520NSTRLPBF from Infineon Technologies meets these substitution criteria with improved electrical performance characteristics and modern RoHS3 compliance, while maintaining identical package geometry and thermal operating range.

Parameter Comparison

Parameter	IRL520S (Vishay)	IRL520NSTRLPBF (Infineon)	Unit
Manufacturer	Vishay Siliconix	Infineon Technologies	—
Drain-to-Source Voltage (Vdss)	100	100	V
Continuous Drain Current (Id) @ 25°C	9.2	10	A
On-Resistance (Rds On Max) @ Id, Vgs	270 mOhm @ 5.5A, 5V	180 mOhm @ 6A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	2	2	V @ 250µA
Gate Charge (Qg Max) @ Vgs	12	20	nC @ 5V
Maximum Gate Voltage (Vgs Max)	±10	±16	V
Input Capacitance (Ciss Max) @ Vds	490	440	pF @ 25V
Power Dissipation (Max)	3.7 (Ta), 60 (Tc)	3.8 (Ta), 48 (Tc)	W
Operating Temperature Range	-55 to 175	-55 to 175	°C (TJ)
Package Type	TO-263-3 (D2PAK)	TO-263-3 (D2PAK)	Surface Mount
Product Status	Obsolete	Not For New Designs	—
RoHS Compliance	Non-compliant	ROHS3 Compliant	—
Moisture Sensitivity Level (MSL)	1 (Unlimited)	1 (Unlimited)	—

Engineering Selection Recommendations

For Obsolete Component Replacement:

The IRL520NSTRLPBF serves as a direct functional substitute for the IRL520S in applications requiring equivalent voltage and current ratings. Both devices share identical drain-to-source voltage (100V), compatible gate threshold voltage (2V @ 250µA), and matching operating temperature range (-55°C to 175°C TJ). The substitute part provides improved on-resistance performance (180 mOhm versus 270 mOhm), resulting in lower thermal dissipation and enhanced efficiency in switching applications.

For Compliance-Driven Applications:

The IRL520NSTRLPBF is ROHS3 compliant, addressing regulatory requirements for new production and markets with RoHS mandates. The original IRL520S is RoHS non-compliant and classified as Obsolete, making the Infineon alternative the appropriate selection for applications subject to environmental compliance standards.

For Thermal Performance:

The IRL520NSTRLPBF demonstrates superior thermal characteristics with lower on-resistance and reduced power dissipation at case temperature (48W Tc versus 60W Tc), enabling more efficient thermal management in high-current switching circuits.

Package and Mounting Compatibility:

Both devices utilize identical TO-263-3 (D2PAK) Surface Mount packaging with 2 Leads + Tab configuration, ensuring direct PCB layout compatibility without redesign requirements.

Frequently Asked Questions (FAQ)

Q: Can the IRL520NSTRLPBF directly replace the IRL520S without circuit modification?

A: Yes. Both devices share identical drain-to-source voltage (100V), gate threshold voltage (2V @ 250µA), and operating temperature range (-55°C to 175°C TJ). The substitute part features lower on-resistance and improved performance characteristics, making it functionally compatible for direct substitution in existing circuit designs.

Q: What is the significance of the higher continuous drain current rating in the IRL520NSTRLPBF (10A versus 9.2A)?

A: The increased current rating (10A) provides additional design margin and thermal headroom. This allows the substitute part to handle the same application loads with reduced stress, extending component life and improving reliability in current-limited applications.

Q: How does the lower on-resistance of the IRL520NSTRLPBF affect circuit performance?

A: Lower on-resistance (180 mOhm versus 270 mOhm) reduces conduction losses during the on-state, resulting in decreased power dissipation, lower junction temperatures, and improved overall circuit efficiency. This is particularly beneficial in high-frequency switching applications.

Q: Are there packaging differences between the IRL520S and IRL520NSTRLPBF?

A: No. Both devices use identical TO-263-3 (D2PAK) Surface Mount packaging with 2 Leads + Tab configuration. PCB footprints and mounting procedures remain unchanged, enabling direct component substitution without layout modifications.

Q: What is the impact of the higher maximum gate voltage rating in the IRL520NSTRLPBF (±16V versus ±10V)?

A: The increased gate voltage rating (±16V) provides greater tolerance for drive circuit variations and transient overvoltage conditions. This enhances robustness in applications with variable or uncontrolled gate drive sources, though standard operation typically remains within ±10V.

Q: Why is the IRL520NSTRLPBF classified as "Not For New Designs" despite being a superior substitute?

A: This classification reflects Infineon's product lifecycle management strategy. While the part remains available and functionally superior, the manufacturer recommends evaluating newer MOSFET generations for new designs. However, for replacement and maintenance of existing IRL520S applications, the IRL520NSTRLPBF remains a valid and compliant alternative.

Q: Does the higher gate charge (20 nC versus 12 nC) in the IRL520NSTRLPBF affect drive circuit requirements?

A: The increased gate charge requires slightly higher drive current or longer switching times from the gate driver circuit. For most standard gate driver implementations, this difference is negligible. Applications with marginal gate drive capability should verify driver specifications against the substitute part's gate charge requirements.

Q: Is the IRL520NSTRLPBF suitable for RoHS-compliant production environments?

A: Yes. The IRL520NSTRLPBF is ROHS3 compliant, making it appropriate for production environments and markets with RoHS mandates. The original IRL520S is RoHS non-compliant and classified as Obsolete, making the Infineon substitute the required choice for compliant manufacturing.

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