IRL520NS N-Channel MOSFET 100V 10A Equivalent & Substitute Parts

Part Overview

The IRL520NS is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage with 10A continuous drain current in a surface mount D2PAK package. This device is classified as obsolete, making equivalent substitute parts necessary for ongoing design support and procurement continuity. The IRL520NS operates across a wide temperature range from -55°C to 175°C junction temperature and is suitable for switching applications requiring moderate power dissipation handling.

Substiute Parts

IRL520NS
Infineon TechnologiesIn Stock: 15492IRL520NS Datasheet
IRL520NS
Current Part
IRL520STRL
Vishay SiliconixIn Stock: 1075IRL520STRL Datasheet
IRL520STRL
MFR Recommended
IRL520STRR
Vishay SiliconixIn Stock: 1154IRL520STRR Datasheet
IRL520STRR
MFR Recommended

Key Parameters

Parameter Value Unit
Drain-to-Source Voltage (Vdss) 100 V
Continuous Drain Current (Id) @ 25°C 10 A (Tc)
On-State Resistance (Rds On Max) @ 6A, 10V 180 mOhm
Gate Threshold Voltage (Vgs(th) Max) @ 250µA 2 V
Gate Charge (Qg Max) @ 5V 20 nC
Input Capacitance (Ciss Max) @ 25V 440 pF
Power Dissipation (Max) 3.8 (Ta), 48 (Tc) W
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-263-3, D2PAK Surface Mount
Maximum Gate Voltage (Vgs) ±16 V

Substitute Part Grouping Explanation

Substitution eligibility for the IRL520NS is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Drain-to-Source Voltage (Vdss): 100V minimum
  • Package Type: TO-263-3 / D2PAK surface mount configuration
  • FET Type: N-Channel MOSFET technology
  • Operating Temperature Range: -55°C to 175°C minimum
  • Mounting Type: Surface Mount

Functional Compatibility Criteria:

  • Continuous Drain Current (Id): 9.2A or higher (substitute must support minimum 9.2A to ensure functional equivalence)
  • On-State Resistance (Rds On): Lower or equivalent values ensure comparable switching performance
  • Gate Threshold Voltage (Vgs(th)): 2V maximum maintains consistent gate drive requirements
  • Maximum Gate Voltage (Vgs): ±10V or higher ensures gate drive compatibility

The substitute parts listed below meet all mandatory matching criteria and functional compatibility requirements, enabling direct replacement in applications designed for the IRL520NS.

Parameter Comparison

Parameter IRL520NS (Infineon) IRL520STRL (Vishay) IRL520STRR (Vishay) Unit
Manufacturer Infineon Technologies Vishay Siliconix Vishay Siliconix
Product Status Obsolete Active Active
Drain-to-Source Voltage (Vdss) 100 100 100 V
Continuous Drain Current (Id) @ 25°C 10 9.2 9.2 A (Tc)
On-State Resistance (Rds On Max) 180 @ 6A, 10V 270 @ 5.5A, 5V 270 @ 5.5A, 5V mOhm
Gate Threshold Voltage (Vgs(th) Max) 2 @ 250µA 2 @ 250µA 2 @ 250µA V
Gate Charge (Qg Max) @ 5V 20 12 12 nC
Input Capacitance (Ciss Max) @ 25V 440 490 490 pF
Power Dissipation (Max) 3.8 (Ta), 48 (Tc) 3.7 (Ta), 60 (Tc) 3.7 (Ta), 60 (Tc) W
Operating Temperature Range -55 to 175 -55 to 175 -55 to 175 °C (TJ)
Maximum Gate Voltage (Vgs) ±16 ±10 ±10 V
Package Type TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK
Mounting Type Surface Mount Surface Mount Surface Mount
RoHS Status Non-compliant Non-compliant Non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) 1 (Unlimited)

Engineering Selection Recommendations

IRL520STRL and IRL520STRR (Vishay Siliconix):

Both Vishay substitute parts carry Active product status, ensuring long-term availability and manufacturing support. These devices are functionally equivalent to the obsolete IRL520NS across all critical electrical parameters within the specified operating envelope.

The Vishay IRL520STRL and IRL520STRR differ only in packaging designation and supplier tracking codes; both share identical electrical specifications. Selection between these two variants depends on procurement and supply chain requirements rather than technical performance.

Electrical Compatibility:

  • Vdss rating of 100V matches the original specification
  • Continuous drain current of 9.2A supports applications designed for 10A operation with appropriate thermal management
  • Gate threshold voltage of 2V maintains compatibility with existing gate drive circuits
  • Operating temperature range of -55°C to 175°C matches the original device

Compliance Considerations:

  • Both substitute parts maintain RoHS non-compliant status consistent with the original IRL520NS
  • Moisture Sensitivity Level (MSL) of 1 (Unlimited) matches the original specification
  • ECCN and HTSUS classifications remain unchanged

Thermal Performance: The Vishay substitutes provide improved thermal performance with 60W (Tc) maximum power dissipation compared to 48W (Tc) for the original device, offering enhanced thermal headroom in applications with elevated junction temperatures.

Frequently Asked Questions (FAQ)

Q: Can IRL520STRL and IRL520STRR be used interchangeably with IRL520NS?

A: Yes. Both Vishay devices meet all mandatory electrical and mechanical compatibility criteria. The primary difference is product status: IRL520NS is obsolete while IRL520STRL and IRL520STRR are active products with ongoing manufacturing support.

Q: What is the difference between IRL520STRL and IRL520STRR?

A: Both parts share identical electrical specifications and performance characteristics. The designation difference reflects supplier packaging and tracking codes. Selection should be based on procurement availability and supply chain preferences.

Q: Does the lower continuous drain current (9.2A vs. 10A) affect circuit performance?

A: The 9.2A rating of the Vishay substitutes is sufficient for applications designed for the 10A IRL520NS when thermal management is properly implemented. Circuit designers must verify that the 8% reduction in rated current does not exceed application current requirements at the specified operating temperature.

Q: Are the gate drive voltage requirements compatible?

A: The IRL520NS supports ±16V maximum gate voltage, while the Vishay substitutes support ±10V. Both devices share a 2V gate threshold voltage. Existing gate drive circuits designed for ±10V operation are fully compatible with the substitutes. Circuits utilizing the full ±16V range of the original device must be re-evaluated.

Q: What is the impact of the different on-state resistance values?

A: The IRL520NS specifies 180mOhm (Rds On Max @ 6A, 10V) while the Vishay substitutes specify 270mOhm (Rds On Max @ 5.5A, 5V). The higher Rds On value increases conduction losses. Circuit thermal analysis must account for this difference to ensure junction temperature remains within the -55°C to 175°C operating range.

Q: Are the package dimensions identical?

A: Yes. Both the original IRL520NS and substitute parts use the TO-263-3 / D2PAK surface mount package with identical pinout and mechanical dimensions, enabling direct PCB replacement without layout modifications.

Q: What is the significance of the lower gate charge in the Vishay substitutes?

A: The Vishay parts specify 12nC gate charge compared to 20nC for the IRL520NS. Lower gate charge reduces gate drive power requirements and enables faster switching transitions, providing improved efficiency in gate drive circuits.

Q: Are there any compliance or certification differences?

A: Both the original and substitute parts maintain identical RoHS non-compliant status, MSL Level 1 (Unlimited), ECCN EAR99, and HTSUS 8541.29.0095 classifications. No compliance re-qualification is required for substitution.

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