IRL3713PBF N-Channel 30V 260A MOSFET Equivalent & Substitute Parts

Part Overview

The IRL3713PBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 30V drain-to-source voltage and 260A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete product status. Due to its obsolete classification, identifying equivalent and substitute parts is necessary to maintain design continuity and ensure component availability for new production runs, repairs, and system upgrades.

Key Parameters

Parameter	Value	Unit
Drain to Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	260	A (Tc)
On-State Resistance (Rds On Max) @ Id, Vgs	3 mOhm @ 38A, 10V	mOhm
Gate Threshold Voltage (Vgs(th) Max) @ Id	2.5	V @ 250µA
Gate Charge (Qg Max) @ Vgs	110	nC @ 4.5V
Power Dissipation (Max)	330	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IRL3713PBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Drain-to-Source Voltage (Vdss): Must equal 30V
Package Type: Must be TO-220AB or TO-220 through-hole configuration
FET Type: Must be N-Channel MOSFET
Technology: Must be Metal Oxide MOSFET
Operating Temperature Range: Must support -55°C to 175°C or equivalent
Gate Voltage (Vgs Max): Must support ±20V

Secondary Compatibility Parameters:

Continuous Drain Current (Id): Substitute parts may have lower current ratings; higher ratings are acceptable
On-State Resistance (Rds On): Lower values indicate improved performance; higher values require thermal analysis
Power Dissipation: Lower values require thermal management verification
Gate Charge (Qg): Affects switching speed and drive circuit requirements

The substitute parts listed below meet all critical matching parameters and are electrically compatible with the IRL3713PBF within their specified operating conditions.

Parameter Comparison

Parameter	IRL3713PBF	IRLB8743PBF	PSMN2R0-30PL,127	PSMN3R4-30PL,127	PSMN4R3-30PL,127	STP105N3LL	STP160N3LL
Manufacturer	Infineon	Infineon	Nexperia USA Inc.	Nexperia USA Inc.	Nexperia USA Inc.	STMicroelectronics	STMicroelectronics
Vdss (V)	30	30	30	30	30	30	30
Id @ 25°C (A)	260	78	100	100	100	80	120
Rds On Max (mOhm)	3.0 @ 38A, 10V	3.2 @ 40A, 10V	2.1 @ 15A, 10V	3.4 @ 10A, 10V	4.3 @ 15A, 10V	3.5 @ 40A, 10V	3.2 @ 60A, 10V
Vgs(th) Max (V)	2.5 @ 250µA	2.35 @ 100µA	2.15 @ 1mA	2.15 @ 1mA	2.15 @ 1mA	2.5 @ 250µA	2.5 @ 250µA
Qg Max (nC)	110 @ 4.5V	54 @ 4.5V	117 @ 10V	64 @ 10V	41.5 @ 10V	42 @ 4.5V	42 @ 4.5V
Power Dissipation Max (W)	330	140	211	114	103	140	136
Ciss Max (pF)	5890 @ 15V	5110 @ 15V	6810 @ 12V	3907 @ 12V	2400 @ 12V	3100 @ 25V	3500 @ 25V
Operating Temp Range (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	to 175	-55 to 175
Package	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220AB	TO-220	TO-220
Product Status	Obsolete	Active	Obsolete	Obsolete	Obsolete	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Active Product Status Priority:

IRLB8743PBF and STP105N3LL and STP160N3LL are classified as active products and represent the preferred substitution options for new designs and production continuity. Active status ensures ongoing manufacturer support, availability, and process consistency.

Compliance and Certification:

All listed substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the regulatory posture of the IRL3713PBF. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095, consistent with the original component.

Current Rating Considerations:

The IRL3713PBF operates at 260A continuous drain current. Substitute parts operate at lower current ratings (78A to 120A). Selection of a substitute part requires verification that the application's actual current demand does not exceed the substitute part's rated continuous drain current. Thermal management and circuit design must accommodate the lower power dissipation ratings of substitute parts.

Thermal Management:

The IRL3713PBF dissipates 330W maximum. Substitute parts range from 103W to 211W maximum dissipation. Applications requiring the full 330W dissipation capability cannot be directly substituted without circuit redesign or parallel device configurations.

Moisture Sensitivity:

All parts, including substitutes, are classified as MSL 1 (Unlimited), indicating no moisture sensitivity restrictions during storage and handling.

Frequently Asked Questions (FAQ)

Q: Can IRLB8743PBF directly replace IRL3713PBF in all applications?

A: IRLB8743PBF is electrically compatible based on voltage rating (30V), package type (TO-220AB), and FET technology (N-Channel MOSFET). However, the continuous drain current rating is 78A versus 260A for the IRL3713PBF. Direct substitution is valid only if the application's actual current demand does not exceed 78A. Thermal analysis is required to confirm adequate heat dissipation at the lower power rating of 140W.

Q: What is the difference between TO-220AB and TO-220 packages?

A: Both are through-hole packages with identical pin configurations and thermal characteristics. TO-220AB and TO-220 are mechanically and electrically interchangeable. The designation difference reflects manufacturer nomenclature variations and does not affect substitution compatibility.

Q: Why do some substitute parts have lower current ratings?

A: The IRL3713PBF is a high-current device rated for 260A. Substitute parts with lower current ratings (78A to 120A) represent different device families optimized for different current ranges. Selection depends on actual application current requirements. Lower-rated devices cannot be used in applications requiring the full 260A capability.

Q: Are all substitute parts suitable for the same gate drive voltage?

A: All substitute parts support Vgs (Max) of ±20V, matching the IRL3713PBF specification. Gate threshold voltages (Vgs(th)) vary slightly between parts (2.15V to 2.5V), which may affect gate drive circuit timing. Verify gate drive circuit compatibility with the selected substitute part's threshold voltage specification.

Q: What is the significance of Gate Charge (Qg) differences?

A: Gate charge affects switching speed and gate drive circuit power requirements. The IRL3713PBF has Qg of 110 nC @ 4.5V. Substitute parts range from 41.5 nC to 117 nC. Lower gate charge reduces switching losses and gate drive power consumption. Higher gate charge may require higher gate drive current capability. Verify gate drive circuit specifications against the selected substitute part's gate charge rating.

Q: Can I use multiple lower-current substitute parts in parallel to achieve 260A capability?

A: Parallel operation of MOSFETs is possible but requires careful circuit design to ensure equal current distribution. This approach is outside the scope of direct substitution and requires detailed thermal and electrical analysis. Consult device datasheets and application notes for parallel operation guidelines.

Q: Which substitute part offers the best thermal performance?

A: PSMN2R0-30PL,127 offers the lowest on-state resistance (2.1 mOhm @ 15A, 10V) among substitute parts, resulting in lower conduction losses. However, its maximum power dissipation (211W) remains lower than the IRL3713PBF (330W). Thermal performance depends on both device characteristics and application circuit design.

Q: Are there any supply chain advantages to specific substitute parts?

A: IRLB8743PBF (15,165 pcs), STP105N3LL (65,100 pcs), and STP160N3LL (3,350 pcs) are listed as active products with current inventory. PSMN2R0-30PL,127 (10,198 pcs), PSMN3R4-30PL,127 (9,092 pcs), and PSMN4R3-30PL,127 (5,596 pcs) are obsolete but currently in stock. Active product status provides long-term availability assurance.

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