IRL3705Z N-Channel MOSFET 55V 75A TO-220AB Equivalent & Substitute Parts

Part Overview

The IRL3705Z is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 55V drain-to-source voltage and 75A continuous drain current in a TO-220AB through-hole package. This device is classified as obsolete, making equivalent and substitute parts necessary for ongoing design support and production continuity. The part operates across a temperature range of -55°C to 175°C and dissipates up to 130W at the case temperature. Substitutes must maintain electrical compatibility across drain voltage, continuous current rating, on-resistance characteristics, and gate drive requirements while accommodating the through-hole TO-220 package family.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	75	A (Tc)
On-Resistance (Rds On Max) @ 52A, 10V	8	mOhm
Gate Threshold Voltage (Vgs th) @ 250µA	3	V
Gate Charge (Qg) @ 5V	60	nC
Power Dissipation (Max)	130	W (Tc)
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	TO-220AB	Through Hole
FET Technology	MOSFET (Metal Oxide)	N-Channel

Substitute Part Grouping Explanation

Substitution eligibility is determined by the following criteria applied strictly to the provided parameters:

Primary Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 55V
Continuous Drain Current (Id): Must equal or exceed 75A at 25°C
On-Resistance (Rds On): Must not exceed 8mOhm at rated current and gate voltage
Gate Threshold Voltage (Vgs th): Must fall within acceptable drive voltage range (3V to 4V @ 250µA)
Package Type: Must be TO-220 family (TO-220AB or TO-220-3 compatible)
Mounting Type: Must be through-hole
Operating Temperature: Must support -55°C to 175°C range

Substitution Groups:

Group 1 – Direct Electrical Match (Vdss 55V, Id 75A, Rds On 8mOhm):

IRL3705ZPBF (International Rectifier) – Active product status
HUF75344P3 (onsemi) – Active product status, enhanced power dissipation
HUF75345P3 (onsemi) – Active product status, superior power dissipation

Group 2 – Enhanced Current Rating (Vdss 55V, Id ≥75A, Rds On ≤8mOhm):

STP80NF55-06 (STMicroelectronics) – 80A rating, 6.5mOhm Rds On
HUF75339P3 (onsemi) – 75A rating, 12mOhm Rds On

Group 3 – Higher Voltage Rating (Vdss ≥60V, Id ≥75A):

DMNH6008SCT (Diodes Incorporated) – 60V, 130A, automotive qualified
STP76NF75 (STMicroelectronics) – 75V, 80A, enhanced power dissipation

Group 4 – Reduced Current Rating (Vdss 55V, Id 60A):

HUF75332P3 (onsemi) – 55V, 60A, lower current application
STP60NF06L (STMicroelectronics) – 60V, 60A, lower current application

Group 5 – Legacy/Obsolete Alternatives:

PHP191NQ06LT,127 (Nexperia) – Obsolete status, 55V, 75A, superior Rds On

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On Max (mOhm)	Vgs th (V)	Qg (nC)	Power Diss (W)	Package	Status
IRL3705Z	Infineon	55	75	8	3	60	130	TO-220AB	Obsolete
IRL3705ZPBF	International Rectifier	55	75	8	3	60	130	TO-220AB	Active
HUF75344P3	onsemi	55	75	8	4	210	285	TO-220-3	Active
HUF75345P3	onsemi	55	75	7	4	275	325	TO-220-3	Active
HUF75339P3	onsemi	55	75	12	4	130	200	TO-220-3	Active
HUF75332P3	onsemi	55	60	19	4	85	145	TO-220-3	Active
STP80NF55-06	STMicroelectronics	55	80	6.5	4	189	300	TO-220	Active
STP76NF75	STMicroelectronics	75	80	11	4	160	300	TO-220	Active
DMNH6008SCT	Diodes Incorporated	60	130	8	4	21	210	TO-220-3	Active
STP60NF06L	STMicroelectronics	60	60	14	1	66	110	TO-220	Active
PHP191NQ06LT,127	Nexperia	55	75	3.7	2	95.6	300	TO-220AB	Obsolete

Engineering Selection Recommendations

For Direct Replacement (Identical Electrical Performance):

IRL3705ZPBF is the primary direct substitute. It maintains identical electrical specifications (55V, 75A, 8mOhm Rds On) and is manufactured by International Rectifier with active product status. This part is available in bulk packaging with 71,839 units in stock, ensuring supply continuity. The HEXFET® series designation confirms compatibility with the original design.

For Enhanced Performance with Active Status:

HUF75344P3 and HUF75345P3 (onsemi UltraFET™ series) provide superior alternatives with identical 55V/75A ratings but lower on-resistance (8mOhm and 7mOhm respectively) and significantly higher power dissipation capability (285W and 325W). Both devices are RoHS3 compliant and carry active product status. HUF75345P3 offers the lowest on-resistance (7mOhm) and highest power dissipation (325W), making it suitable for thermally demanding applications.

For Higher Current Capability:

STP80NF55-06 (STMicroelectronics STripFET™ II) delivers 80A continuous current at 55V with superior on-resistance (6.5mOhm) and 300W power dissipation. This part accommodates higher current transients while maintaining the 55V rating. RoHS3 compliance and active status support long-term availability.

For Automotive Applications:

DMNH6008SCT (Diodes Incorporated) is AEC-Q101 qualified and carries automotive-grade designation. It provides 60V/130A capability with 8mOhm on-resistance and 210W power dissipation. This part is suitable for automotive power management circuits requiring higher current handling and regulatory compliance.

For Voltage-Tolerant Designs:

STP76NF75 (STMicroelectronics) extends the voltage rating to 75V while maintaining 80A current capability and 300W power dissipation. This part accommodates designs with higher supply voltage margins or transient overvoltage conditions.

Compliance Considerations:

All recommended active substitutes are RoHS3 compliant. DMNH6008SCT additionally carries AEC-Q101 automotive qualification. The original IRL3705Z is RoHS non-compliant; substitution with compliant alternatives (IRL3705ZPBF, HUF series, STP series) aligns with current regulatory requirements.

Frequently Asked Questions (FAQ)

Q: Can IRL3705ZPBF directly replace IRL3705Z without circuit modification?

A: Yes. IRL3705ZPBF maintains identical electrical specifications: 55V Vdss, 75A continuous current, 8mOhm on-resistance, and 3V gate threshold voltage. Both use TO-220AB packaging. No circuit changes are required. The primary difference is product status (active vs. obsolete) and packaging format (bulk vs. original).

Q: What is the difference between TO-220AB and TO-220-3 packages?

A: Both are through-hole TO-220 family packages with identical pin spacing and thermal characteristics. TO-220AB and TO-220-3 are mechanically and electrically interchangeable in standard PCB layouts. The designation difference reflects manufacturer nomenclature; functional compatibility is maintained.

Q: Why do HUF75344P3 and HUF75345P3 have higher gate charge (Qg) than the original IRL3705Z?

A: Higher gate charge (210nC and 275nC vs. 60nC) reflects the onsemi UltraFET™ technology optimization for lower on-resistance and higher power dissipation. This requires more gate charge for switching but delivers superior thermal performance. Gate drive circuits must supply adequate current to handle the increased charge; most modern PWM controllers accommodate this range.

Q: Is DMNH6008SCT suitable for non-automotive applications?

A: Yes. DMNH6008SCT is AEC-Q101 qualified, meaning it exceeds automotive reliability standards. It is fully functional in industrial and consumer applications. The higher current rating (130A vs. 75A) and voltage margin (60V vs. 55V) make it suitable for demanding power conversion circuits.

Q: What is the impact of lower on-resistance (Rds On) in substitute parts?

A: Lower on-resistance reduces conduction losses and heat generation. PHP191NQ06LT,127 (3.7mOhm) and HUF75345P3 (7mOhm) dissipate less power than the original 8mOhm specification. This improves efficiency and reduces thermal management requirements. Designs with marginal thermal headroom benefit from these lower-loss alternatives.

Q: Can STP76NF75 (75V rating) be used in a 55V circuit?

A: Yes. STP76NF75 is rated for 75V, which exceeds the 55V requirement. It operates safely in 55V circuits with additional voltage margin for transient overvoltage protection. The 80A current rating and 300W power dissipation provide performance headroom. No circuit modification is required.

Q: Why is HUF75332P3 listed as a substitute if it only provides 60A instead of 75A?

A: HUF75332P3 is included for applications where the design current requirement is 60A or less. It maintains the 55V voltage rating and offers active product status with RoHS3 compliance. For circuits operating below 75A, this part provides a cost-effective alternative with proven reliability.

Q: What is the significance of RoHS3 compliance in substitute selection?

A: RoHS3 compliance indicates the part meets current environmental and hazardous substance restrictions. The original IRL3705Z is RoHS non-compliant. Substitution with RoHS3-compliant parts (all active alternatives listed) ensures regulatory alignment for new designs and supports supply chain compliance requirements.

Q: How does gate threshold voltage (Vgs th) variation affect circuit design?

A: The original IRL3705Z specifies 3V Vgs th, while most substitutes specify 4V. This 1V difference requires gate drive voltage to exceed 4V for reliable switching. Standard PWM controllers typically provide 5V to 15V gate drive, which accommodates both specifications. Designs with marginal gate drive voltage should verify compatibility with the substitute's higher threshold.

Q: Is PHP191NQ06LT,127 recommended despite obsolete status?

A: PHP191NQ06LT,127 is listed for reference only. Although obsolete, it demonstrates superior on-resistance (3.7mOhm) and power dissipation (300W) characteristics. For new designs, active alternatives (HUF75345P3, STP80NF55-06) are recommended. For legacy system support, PHP191NQ06LT,127 may be sourced from inventory if available.

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