IRL3103L N-Channel MOSFET 30V 64A Equivalent & Substitute Parts

Part Overview

The IRL3103L is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 30V drain-to-source voltage with 64A continuous drain current at 25°C. This device is part of the HEXFET® series and features a Through Hole TO-262 package configuration. The IRL3103L is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing design support, maintenance, and production continuity.

Substiute Parts

IRL3103L
Infineon TechnologiesIn Stock: 1983IRL3103L Datasheet
IRL3103L
Current Part
STI55NF03L
STMicroelectronicsIn Stock: 2484STI55NF03L Datasheet
STI55NF03L
MFR Recommended

Key Parameters

Parameter Value Unit
Drain to Source Voltage (Vdss) 30 V
Continuous Drain Current (Id) @ 25°C 64 A (Tc)
Rds On (Max) @ Id, Vgs 12 mOhm @ 34A, 10V mOhm
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 4.5V
Power Dissipation (Max) 94 W (Tc)
Operating Temperature Range -55 to 175 °C (TJ)
Package Type TO-262-3 Through Hole
FET Type N-Channel
Technology MOSFET (Metal Oxide)

Substitute Part Grouping Explanation

Substitution of the IRL3103L is determined by strict equivalence across the following critical electrical and mechanical parameters:

Electrical Equivalence Criteria:

  • Drain-to-Source Voltage (Vdss): Must equal 30V
  • FET Type: Must be N-Channel
  • Technology: Must be MOSFET (Metal Oxide)
  • Gate Voltage Range (Vgs Max): Must support ±16V
  • Operating Temperature Range: Must encompass -55°C to 175°C minimum

Mechanical Equivalence Criteria:

  • Mounting Type: Through Hole required
  • Package Family: TO-262 series (TO-262-3, I2PAK, TO-262AA variants acceptable)

Performance Consideration: Substitute parts may have lower continuous drain current (Id) ratings, lower power dissipation, or different on-resistance characteristics, provided the application requirements do not exceed the substitute's rated specifications. The substitute must not have inferior voltage or temperature ratings.

Parameter Comparison

Parameter IRL3103L (Infineon) STI55NF03L (STMicroelectronics) Unit
Manufacturer Infineon Technologies STMicroelectronics
Series HEXFET® STripFET™ II
Drain to Source Voltage (Vdss) 30 30 V
Continuous Drain Current (Id) @ 25°C 64 55 A (Tc)
Rds On (Max) @ Id, Vgs 12 mOhm @ 34A, 10V 13 mOhm @ 27.5A, 10V mOhm
Gate Charge (Qg) (Max) @ Vgs 33 27 nC @ 4.5V
Power Dissipation (Max) 94 80 W (Tc)
Operating Temperature Range -55 to 175 -60 to 175 °C (TJ)
Vgs (Max) ±16 ±16 V
Input Capacitance (Ciss) (Max) @ Vds 1650 1265 pF @ 25V
Mounting Type Through Hole Through Hole
Package Type TO-262-3 I2PAK
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Product Status Obsolete Obsolete
RoHS Status RoHS non-compliant ROHS3 Compliant

Engineering Selection Recommendations

STI55NF03L as Primary Substitute:

The STI55NF03L from STMicroelectronics qualifies as a functional substitute for the IRL3103L based on matching electrical specifications: identical 30V Vdss rating, N-Channel configuration, MOSFET technology, and ±16V gate voltage range. Both devices operate across the -55°C to 175°C temperature range and employ Through Hole mounting in compatible TO-262 package families.

Compliance Consideration:

The STI55NF03L holds ROHS3 compliance status, whereas the IRL3103L is RoHS non-compliant. For applications subject to RoHS regulatory requirements, the STI55NF03L provides compliance advantage. Both devices are REACH Unaffected and classified under ECCN EAR99.

Performance Trade-offs:

The STI55NF03L exhibits lower continuous drain current (55A versus 64A) and reduced power dissipation (80W versus 94W). Applications operating at or near the IRL3103L's maximum current or thermal ratings require verification that the STI55NF03L's specifications remain adequate. The STI55NF03L demonstrates lower gate charge (27 nC versus 33 nC) and reduced input capacitance (1265 pF versus 1650 pF), which may provide switching speed advantages in certain circuit topologies.

Package Compatibility:

Both devices are available in TO-262 package family variants. The IRL3103L uses TO-262-3 Long Leads configuration, while the STI55NF03L is supplied in I2PAK format. Both package types are mechanically and electrically compatible for Through Hole PCB mounting applications.

Frequently Asked Questions (FAQ)

Q: Can the STI55NF03L directly replace the IRL3103L in all applications?

A: The STI55NF03L is electrically and mechanically compatible with the IRL3103L for applications where the continuous drain current requirement does not exceed 55A and power dissipation does not exceed 80W. Applications designed specifically for the IRL3103L's 64A rating or 94W dissipation capability require circuit redesign or thermal management adjustment to operate within the STI55NF03L's specifications.

Q: What is the significance of the different package designations (TO-262-3 versus I2PAK)?

A: Both TO-262-3 Long Leads and I2PAK are variants within the TO-262 package family, designed for Through Hole PCB mounting. These designations reflect manufacturing and supplier packaging conventions but do not affect electrical performance or mechanical compatibility. PCB footprints designed for TO-262 family devices accommodate both variants.

Q: Why does the STI55NF03L have lower gate charge than the IRL3103L?

A: Gate charge (Qg) is a function of device design and manufacturing process. The STI55NF03L's lower gate charge (27 nC versus 33 nC) reflects differences in the STripFET™ II process technology compared to the HEXFET® series. Lower gate charge typically results in faster switching transitions, which may reduce switching losses in high-frequency applications.

Q: Are there any thermal management differences between these devices?

A: The IRL3103L is rated for 94W maximum power dissipation, while the STI55NF03L is rated for 80W. Both devices operate across identical temperature ranges (-55°C to 175°C). Applications requiring sustained operation near maximum power dissipation should verify that thermal management provisions (heatsinking, PCB copper area) remain adequate for the STI55NF03L's lower dissipation rating.

Q: What does RoHS compliance status mean for component selection?

A: RoHS (Restriction of Hazardous Substances) compliance indicates that a component meets regulatory restrictions on lead, cadmium, mercury, and other hazardous materials. The STI55NF03L's ROHS3 compliance status makes it suitable for applications and markets with RoHS regulatory requirements. The IRL3103L's non-compliant status may restrict its use in certain jurisdictions or customer specifications.

Q: Can I use the STI55NF03L in a circuit originally designed for the IRL3103L without any modifications?

A: Electrical substitution is possible without circuit modifications if the application operates within the STI55NF03L's rated specifications (55A maximum continuous current, 80W maximum dissipation). However, gate drive circuits, thermal management, and current-limiting protection should be reviewed to ensure compatibility with the STI55NF03L's different gate charge and capacitance characteristics.

Q: What inventory status should I consider when selecting between these parts?

A: The IRL3103L has 1900 pieces in stock, while the STI55NF03L has 2400 pieces available. Both devices are classified as obsolete, indicating limited future availability. For long-term production requirements, neither part represents a sustainable solution; evaluation of current-generation N-Channel 30V MOSFETs is recommended for new designs.

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