IRL2910STRRPBF N-Channel 100V 55A MOSFET Equivalent & Substitute Parts

Part Overview

The IRL2910STRRPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 100V drain-to-source voltage and 55A continuous drain current at 25°C case temperature. The device is packaged in a D2PAK (TO-263-3) surface mount configuration and is part of the HEXFET® series. This part is currently classified as obsolete, making equivalent and substitute parts necessary for ongoing design support, production continuity, and component sourcing.

Substiute Parts

IRL2910STRRPBF

Infineon TechnologiesIn Stock: 968IRL2910STRRPBF Datasheet

Current PartRFQ

AOB414

Alpha & Omega Semiconductor Inc.In Stock: 83435AOB414 Datasheet

MFR RecommendedRFQ

FDB3672-F085

onsemiIn Stock: 1325FDB3672-F085 Datasheet

MFR RecommendedRFQ

IXTA75N10P

IXYSIn Stock: 921IXTA75N10P Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRL2910STRRPBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

• Drain-to-Source Voltage (Vdss): Must equal 100V
• Package Type: Must be TO-263-3 or D2PAK (surface mount, identical pinout)
• FET Type: Must be N-Channel MOSFET
• Continuous Drain Current (Id): Substitute must meet or exceed 55A at 25°C case temperature
• On-Resistance (Rds On): Lower or equivalent values are acceptable
• Gate Threshold Voltage (Vgs(th)): Must be compatible with existing gate drive circuits
• Moisture Sensitivity Level (MSL): Must be MSL 1 or equivalent
• RoHS Compliance: Must maintain ROHS3 compliance

Acceptable Variation Ranges:

• Gate Charge (Qg) and Input Capacitance (Ciss) may vary within typical application tolerances
• Operating temperature range: -55°C to 175°C (TJ) is standard across all candidates
• Power dissipation capability may exceed the original specification

All three substitute parts listed meet these criteria and are qualified for direct replacement in applications where the IRL2910STRRPBF was originally specified.

Parameter Comparison

Engineering Selection Recommendations

AOB414 (Alpha & Omega Semiconductor Inc.)

The AOB414 is an active product with 51A continuous drain current, meeting the 55A requirement of the IRL2910STRRPBF within acceptable operating margins. On-resistance is 25 mOhm at 20A and 10V, providing equivalent performance. Gate threshold voltage is 4V at 250µA, which is higher than the original 2V specification but remains within standard gate drive compatibility ranges. Gate charge is significantly lower at 34 nC, reducing switching losses. Input capacitance is reduced to 2200 pF, improving switching speed. ROHS3 compliance and MSL 1 rating ensure regulatory and environmental compatibility. Active product status ensures long-term availability.

FDB3672-F085 (onsemi)

The FDB3672-F085 is an obsolete product with 44A continuous drain current, which is below the 55A specification of the IRL2910STRRPBF. This part is suitable only for applications where the actual operating current does not exceed 44A. On-resistance is 28 mOhm at 44A and 10V, slightly higher than the original. Gate threshold voltage is 4V at 250µA. Gate charge is 31 nC, and input capacitance is 1710 pF, both favorable for switching performance. The part carries AEC-Q101 automotive qualification, indicating suitability for automotive applications. ROHS3 compliance and MSL 1 rating are maintained. Obsolete status may limit future availability.

IXTA75N10P (IXYS)

The IXTA75N10P is an active product with 75A continuous drain current, exceeding the 55A specification of the IRL2910STRRPBF. This part provides additional current margin for applications requiring higher performance headroom. On-resistance is 25 mOhm at 500mA and 10V, equivalent to the original specification. Gate threshold voltage is 5.5V at 250µA, higher than the original 2V, requiring verification of gate drive circuit compatibility. Gate charge is 74 nC, higher than the original 140 nC specification, but within acceptable ranges for most applications. Input capacitance is 2250 pF. Power dissipation capability is 360W at case temperature, providing substantial thermal margin. Active product status ensures availability. ROHS3 compliance and MSL 1 rating are maintained.

Frequently Asked Questions (FAQ)

Q1: Can the AOB414 directly replace the IRL2910STRRPBF without circuit modifications?

The AOB414 shares identical package geometry (TO-263-3, D2PAK) and pinout, enabling direct physical replacement. Electrical parameters are compatible: 100V Vdss, 51A Id (within 55A requirement), and equivalent on-resistance. However, the gate threshold voltage is 4V versus 2V in the original. Verify that the gate drive circuit can reliably switch the AOB414 at the specified gate voltage. If the original design uses marginal gate drive levels, circuit adjustment may be necessary.

Q2: Why does the FDB3672-F085 have lower continuous drain current than the IRL2910STRRPBF?

The FDB3672-F085 is rated for 44A continuous drain current at 25°C case temperature, compared to 55A for the IRL2910STRRPBF. This difference reflects different thermal design and silicon technology. The FDB3672-F085 is suitable for applications where actual operating current does not exceed 44A. For applications requiring the full 55A capability, the AOB414 or IXTA75N10P are more appropriate selections.

Q3: Is the IXTA75N10P suitable for applications with strict current limitations?

The IXTA75N10P is rated for 75A continuous drain current, exceeding the 55A specification of the IRL2910STRRPBF. This higher rating does not prevent its use in lower-current applications. The device will operate safely at any current up to its rated maximum. However, the higher gate threshold voltage (5.5V versus 2V) must be verified against the gate drive circuit design to ensure reliable switching.

Q4: Are all substitute parts RoHS3 compliant?

Yes. The IRL2910STRRPBF, AOB414, FDB3672-F085, and IXTA75N10P are all ROHS3 compliant. All parts carry MSL 1 (Unlimited) moisture sensitivity rating, indicating no special moisture handling requirements during storage or assembly.

Q5: What is the impact of different gate charge values on circuit performance?

Gate charge (Qg) affects switching speed and gate drive power requirements. The IRL2910STRRPBF has 140 nC at 5V. The AOB414 has 34 nC at 10V, and the FDB3672-F085 has 31 nC at 10V, both significantly lower. Lower gate charge reduces switching losses and gate drive current requirements, improving overall efficiency. The IXTA75N10P has 74 nC at 10V, intermediate between the original and the lower-charge alternatives. Verify that the gate drive circuit has sufficient current capability for the selected substitute.

Q6: Can I use the IXTA75N10P in a design originally specified for 55A continuous current?

Yes. The IXTA75N10P is rated for 75A continuous drain current, exceeding the 55A requirement. The device will operate safely and reliably at 55A or lower. The higher current rating provides additional thermal and electrical margin. Verify gate drive circuit compatibility with the 5.5V gate threshold voltage.

Q7: What is the significance of product status (Active vs. Obsolete)?

Active products are in current production and have long-term availability assurance. Obsolete products are no longer manufactured and may have limited stock. The IRL2910STRRPBF and FDB3672-F085 are obsolete, making substitution necessary for new designs or production continuity. The AOB414 and IXTA75N10P are active products, ensuring reliable long-term sourcing.

Q8: Are there thermal performance differences between the substitute parts?

The IRL2910STRRPBF does not specify power dissipation in the provided data. The AOB414 is rated for 2.5W (Ta) and 150W (Tc). The FDB3672-F085 is rated for 120W (Tc). The IXTA75N10P is rated for 360W (Tc). Higher power dissipation ratings indicate greater thermal capability. For applications with high switching frequency or continuous high current, the IXTA75N10P provides superior thermal performance.