IRL2703PBF N-Channel 30V 24A MOSFET Equivalent & Substitute Parts

Part Overview

The IRL2703PBF is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 30V drain-to-source voltage and 24A continuous drain current at 25°C. The device is packaged in TO-220AB through-hole configuration with a maximum power dissipation of 45W. The product status is listed as Obsolete, necessitating identification of equivalent and substitute components for ongoing design support and procurement continuity. Substitute parts are selected based on matching or exceeding electrical performance parameters while maintaining compatible packaging and thermal characteristics.

Key Parameters

Parameter	IRL2703PBF Value	Unit
FET Type	N-Channel	—
Drain-to-Source Voltage (Vdss)	30	V
Continuous Drain Current (Id) @ 25°C	24	A
On-State Resistance (Rds On) @ 14A, 10V	40	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 4.5V	15	nC
Maximum Gate Voltage (Vgs)	±16	V
Input Capacitance (Ciss) @ 25V	450	pF
Power Dissipation (Max)	45	W
Operating Temperature Range	-55 to 175	°C
Mounting Type	Through Hole	—
Package / Case	TO-220-3	—
RoHS Status	ROHS3 Compliant	—

Substitute Part Grouping Explanation

Substitute parts for the IRL2703PBF are selected based on the following electrical and mechanical criteria:

Primary Substitution Criteria:

Drain-to-Source Voltage (Vdss): Equal to or greater than 30V
Continuous Drain Current (Id): Equal to or greater than 24A at 25°C
Package Type: TO-220-3 through-hole configuration
Operating Temperature Range: Minimum -55°C to 175°C
RoHS Compliance: ROHS3 Compliant
Technology: N-Channel MOSFET

Secondary Performance Considerations:

On-State Resistance (Rds On): Lower values indicate improved efficiency
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: Higher ratings provide thermal margin

Substitutes are grouped into three categories based on current rating and voltage rating alignment with the IRL2703PBF baseline specifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Ciss (pF)	Pd Max (W)	Status
IRL2703PBF	Infineon	30	24	40 @ 14A, 10V	15 @ 4.5V	450 @ 25V	45	Obsolete
IRLB8721PBF	Infineon	30	62	8.7 @ 31A, 10V	13 @ 4.5V	1077 @ 15V	65	Active
PSMN022-30PL,127	Nexperia	30	30	22 @ 5A, 10V	9 @ 10V	447 @ 15V	41	Obsolete
PSMN4R3-30PL,127	Nexperia	30	100	4.3 @ 15A, 10V	41.5 @ 10V	2400 @ 12V	103	Obsolete
PSMN2R0-30PL,127	Nexperia	30	100	2.1 @ 15A, 10V	117 @ 10V	6810 @ 12V	211	Obsolete
PSMN2R2-40PS,127	Nexperia	40	100	2.1 @ 25A, 10V	130 @ 10V	8423 @ 20V	306	Obsolete
STP62NS04Z	STMicroelectronics	33	62	15 @ 30A, 10V	47 @ 10V	1330 @ 25V	110	Obsolete
IPP015N04NGXKSA1	Infineon	40	120	1.5 @ 100A, 10V	250 @ 10V	20000 @ 20V	250	Active

Engineering Selection Recommendations

Direct Replacement (Same Voltage Rating, 30V):

IRLB8721PBF is the primary recommended substitute. This Infineon HEXFET® device maintains the 30V Vdss rating and TO-220AB package configuration. With 62A continuous drain current, it exceeds the IRL2703PBF baseline of 24A. The IRLB8721PBF features significantly lower on-state resistance (8.7 mOhm versus 40 mOhm), resulting in reduced power dissipation and improved thermal performance. Product status is Active, ensuring long-term availability. RoHS3 compliance and identical operating temperature range (-55°C to 175°C) confirm full compatibility.

PSMN022-30PL,127 (Nexperia) provides a near-equivalent option with 30A continuous drain current and 30V rating. This part maintains the same voltage class and package type. However, product status is Obsolete, limiting its suitability for new designs requiring long-term supply assurance.

Higher Current Capacity Substitutes (30V Rating):

PSMN4R3-30PL,127 and PSMN2R0-30PL,127 both maintain 30V Vdss with 100A continuous drain current capability. These parts provide significant current margin and improved on-state resistance characteristics. Both are Nexperia products in TO-220AB packaging with ROHS3 compliance. Product status is Obsolete for both parts.

Higher Voltage Rating Substitutes (40V Rating):

PSMN2R2-40PS,127 (Nexperia) and IPP015N04NGXKSA1 (Infineon) offer 40V Vdss rating with 100A and 120A continuous drain current respectively. These parts provide voltage margin suitable for applications with higher transient voltage stress. IPP015N04NGXKSA1 is Active status with OptiMOS™ technology, offering superior on-state resistance (1.5 mOhm) and power dissipation rating (250W). PSMN2R2-40PS,127 is Obsolete status.

STP62NS04Z (STMicroelectronics) offers 33V Vdss with 62A continuous drain current in MESH OVERLAY™ technology. Product status is Obsolete.

Compliance and Certification:

All substitute parts listed maintain ROHS3 compliance, REACH Unaffected status, and identical EAR99 export classification. All operate within the -55°C to 175°C temperature range. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no special moisture handling requirements.

Frequently Asked Questions (FAQ)

Q: Can IRLB8721PBF directly replace IRL2703PBF in existing designs?

A: Yes. IRLB8721PBF maintains identical 30V Vdss rating, TO-220AB package configuration, and operating temperature range. The higher 62A continuous drain current provides design margin. Lower on-state resistance improves efficiency. Active product status ensures supply continuity. No circuit modifications are required for direct substitution.

Q: What is the difference between IRL2703PBF and PSMN4R3-30PL,127?

A: Both devices maintain 30V Vdss and TO-220AB packaging. PSMN4R3-30PL,127 provides 100A continuous drain current versus 24A for IRL2703PBF, with significantly lower on-state resistance (4.3 mOhm versus 40 mOhm). PSMN4R3-30PL,127 is manufactured by Nexperia and has Obsolete status. IRL2703PBF is Infineon HEXFET® series. Both are ROHS3 compliant.

Q: Why would I select IPP015N04NGXKSA1 over IRLB8721PBF?

A: IPP015N04NGXKSA1 offers 40V Vdss versus 30V, providing voltage margin for applications with higher transient overvoltage. It delivers 120A continuous drain current with superior on-state resistance (1.5 mOhm) and 250W power dissipation rating. IPP015N04NGXKSA1 is Active status with long-term availability. The trade-off is higher input capacitance (20000 pF versus 1077 pF), requiring stronger gate drive capability.

Q: Are all substitute parts RoHS compliant?

A: Yes. All substitute parts listed are ROHS3 Compliant with REACH Unaffected status. Moisture Sensitivity Level is 1 (Unlimited) for all parts, indicating no special moisture handling or baking requirements.

Q: What is the significance of on-state resistance (Rds On) differences?

A: On-state resistance directly affects power dissipation and thermal performance. Lower Rds On values reduce I²R losses during conduction. IRLB8721PBF (8.7 mOhm) dissipates significantly less heat than IRL2703PBF (40 mOhm) at equivalent current levels. This improves efficiency and reduces heatsink requirements. IPP015N04NGXKSA1 (1.5 mOhm) provides the lowest on-state resistance among all listed substitutes.

Q: Can I use a 40V rated device in a 30V application?

A: Yes. Devices rated for higher voltage (40V) are suitable for applications designed for lower voltage (30V). The higher voltage rating provides additional safety margin against transient overvoltage events. However, input capacitance and gate charge characteristics may differ, potentially requiring gate drive circuit adjustments. Verify gate drive voltage compatibility before implementation.

Q: What does "Obsolete" product status mean for substitution?

A: Obsolete status indicates the manufacturer has discontinued production and support. While existing inventory may be available, long-term supply cannot be assured. For new designs or long-term production requirements, Active status parts (IRLB8721PBF or IPP015N04NGXKSA1) are recommended to ensure sustained component availability and manufacturer technical support.

Q: How do gate charge (Qg) differences affect circuit design?

A: Gate charge determines the total charge required to switch the MOSFET on or off. Higher Qg values require stronger gate drive circuits and increase switching losses. IRL2703PBF requires 15 nC at 4.5V. IRLB8721PBF requires 13 nC at 4.5V, slightly lower. IPP015N04NGXKSA1 requires 250 nC at 10V, significantly higher, necessitating a more robust gate driver for equivalent switching speed.

Q: What package considerations apply to these substitutes?

A: All listed substitutes use TO-220-3 through-hole packaging, maintaining mechanical compatibility with IRL2703PBF. Pin configuration and lead spacing are identical. Thermal pad contact area and heatsink mounting interfaces are standardized across all parts. No PCB layout modifications are required for package compatibility.

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