IRL2505S N-Channel MOSFET Equivalent & Substitute Parts

Part Overview

The IRL2505S is an N-Channel MOSFET manufactured by Infineon Technologies in the HEXFET® series, rated for 55V drain-to-source voltage with 104A continuous drain current in D2PAK surface mount packaging. This device is classified as obsolete product status. Due to its obsolescence, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term supply chain reliability. Substitute parts must maintain compatibility across drain-to-source voltage, continuous drain current, on-resistance characteristics, and D2PAK packaging format.

Key Parameters

Parameter	IRL2505S Value	Unit
Drain-to-Source Voltage (Vdss)	55	V
Continuous Drain Current (Id) @ 25°C	104	A
On-Resistance (Rds On Max) @ 54A, 10V	8	mOhm
Gate-Source Voltage (Vgs Max)	±16	V
Gate Threshold Voltage (Vgs(th) Max) @ 250µA	2	V
Gate Charge (Qg Max) @ 5V	130	nC
Input Capacitance (Ciss Max) @ 25V	5000	pF
Power Dissipation (Tc)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	-
Mounting Type	Surface Mount	-
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitute parts for the IRL2505S are selected based on the following critical parameters that determine functional equivalence:

Primary Selection Criteria:

Drain-to-Source Voltage (Vdss): Minimum 55V to maintain voltage rating compatibility
Continuous Drain Current (Id): Minimum 80A to support the original 104A specification with margin
On-Resistance (Rds On): Maximum 8.8mOhm to ensure thermal performance equivalence
Package Type: D2PAK (TO-263-3) surface mount for mechanical compatibility
Operating Temperature Range: -55°C to 175°C minimum

Substitution Logic: Parts are grouped into two categories based on their electrical characteristics relative to the IRL2505S:

Category A - Direct Voltage/Current Equivalents (55V Rating): These parts maintain the 55V Vdss rating with comparable or higher continuous drain current ratings. They provide the closest functional replacement with minimal circuit redesign.

Category B - Higher Voltage Rated Alternatives (60V-100V Rating): These parts exceed the 55V Vdss requirement, providing additional voltage margin. They are suitable for applications where higher voltage headroom is beneficial or where circuit topology permits voltage derating.

All substitute parts listed maintain D2PAK packaging, surface mount technology, and the -55°C to 175°C operating temperature range of the original device.

Parameter Comparison

Parameter	IRL2505S	STB85NF55LT4	STB140NF55T4	STB141NF55	HUF75345S3ST	FDB088N08
Manufacturer	Infineon	STMicroelectronics	STMicroelectronics	STMicroelectronics	onsemi	onsemi
Vdss (V)	55	55	55	55	55	75
Id @ 25°C (A)	104	80	80	80	75	120
Rds On Max (mOhm)	8 @ 54A, 10V	8 @ 40A, 10V	8 @ 40A, 10V	8 @ 40A, 10V	7 @ 75A, 10V	8.8 @ 75A, 10V
Vgs(th) Max (V)	2 @ 250µA	2.5 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA	4 @ 250µA
Qg Max (nC)	130 @ 5V	110 @ 5V	142 @ 10V	142 @ 10V	275 @ 20V	118 @ 10V
Ciss Max (pF)	5000 @ 25V	4050 @ 25V	5300 @ 25V	5300 @ 25V	4000 @ 25V	6595 @ 25V
Power Dissipation Tc (W)	200	300	300	300	325	160
Vgs Max (V)	±16	±15	±20	±20	±20	±20
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175
Package	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Compliance	Non-compliant	ROHS3	ROHS3	ROHS3	ROHS3	ROHS3

Engineering Selection Recommendations

Primary Substitutes (55V Rated, Active Status):

STB85NF55LT4 (STMicroelectronics STripFET™ II series) is the recommended primary substitute. This device matches the 55V Vdss rating, provides 80A continuous drain current, maintains 8mOhm on-resistance, and is classified as active product status with ROHS3 compliance. The lower gate charge (110nC vs. 130nC) and reduced input capacitance (4050pF vs. 5000pF) provide improved switching characteristics. Inventory availability is 2146 units.

STB140NF55T4 and STB141NF55 (STMicroelectronics STripFET™ II series) provide identical electrical specifications to STB85NF55LT4 with enhanced power dissipation capability (300W). STB140NF55T4 is active status with ROHS3 compliance and 15365 units in stock. STB141NF55 is active status with MSL-3 moisture sensitivity and 834 units available. Both devices feature higher gate charge (142nC) and input capacitance (5300pF) compared to the original IRL2505S.

HUF75345S3ST (onsemi UltraFET™ series) maintains 55V Vdss with 75A continuous drain current and superior on-resistance (7mOhm). This device offers the lowest on-resistance among 55V-rated substitutes, resulting in reduced power dissipation. Active status with ROHS3 compliance. Inventory: 1992 units.

Secondary Substitute (75V Rated, Higher Voltage Margin):

FDB088N08 (onsemi PowerTrench® series) provides 75V Vdss with 120A continuous drain current, exceeding both voltage and current specifications of the IRL2505S. On-resistance is 8.8mOhm at 75A, 10V. This device is suitable for applications requiring additional voltage headroom or where higher current capacity is beneficial. Active status with ROHS3 compliance. Inventory: 24879 units.

Compliance and Certification Status:

All recommended substitutes are ROHS3 compliant and REACH unaffected, addressing environmental regulatory requirements. The IRL2505S is RoHS non-compliant, making transition to compliant alternatives necessary for new designs and long-term supply chain sustainability.

Frequently Asked Questions (FAQ)

Q1: Can STB85NF55LT4 directly replace IRL2505S without circuit modification?

A: STB85NF55LT4 is mechanically and electrically compatible for direct replacement in D2PAK surface mount applications. The 55V Vdss rating, 8mOhm on-resistance, and D2PAK package match the original specification. The 80A continuous drain current is lower than the IRL2505S 104A rating; verify that your application does not require the full 104A specification. Gate charge and input capacitance are lower, which may improve switching performance.

Q2: What is the difference between STB140NF55T4 and STB141NF55?

A: Both devices are electrically identical with 55V Vdss, 80A continuous drain current, and 8mOhm on-resistance. The primary difference is moisture sensitivity level: STB140NF55T4 is MSL-1 (unlimited), while STB141NF55 is MSL-3 (168 hours). For standard manufacturing environments, either part is acceptable. MSL-3 requires controlled storage and handling procedures. STB140NF55T4 has higher inventory availability (15365 units vs. 834 units).

Q3: Why would I select FDB088N08 over the 55V-rated alternatives?

A: FDB088N08 provides 75V Vdss, offering 20V additional voltage margin above the IRL2505S 55V rating. This is beneficial in applications with voltage transients, overvoltage conditions, or where circuit topology permits voltage derating. The 120A continuous drain current exceeds the original 104A specification. However, the higher Vdss rating results in increased on-resistance (8.8mOhm) and input capacitance (6595pF), which may increase switching losses. Select FDB088N08 only if higher voltage rating is required by your application.

Q4: Are all substitute parts available in the same packaging as IRL2505S?

A: All recommended substitutes use D2PAK (TO-263-3) surface mount packaging, identical to the IRL2505S. Mechanical compatibility is confirmed. Verify PCB footprint dimensions match TO-263-3 standard specifications before assembly.

Q5: What is the impact of different gate threshold voltages on circuit operation?

A: The IRL2505S has Vgs(th) of 2V @ 250µA, while most substitutes specify 4V @ 250µA or 2.5V @ 250µA. Gate threshold voltage determines the gate-source voltage at which the device begins to conduct. Higher threshold voltages require higher gate drive voltage to achieve full on-state conduction. Verify your gate driver circuit can supply sufficient voltage to meet the substitute part's Vgs(th) specification. Lower threshold voltage (STB85NF55LT4 at 2.5V) provides closer matching to the original device.

Q6: How do gate charge differences affect switching frequency performance?

A: Gate charge (Qg) determines the total charge required to switch the device on or off. The IRL2505S specifies 130nC @ 5V. STB85NF55LT4 requires 110nC @ 5V (lower), while STB140NF55T4 and STB141NF55 require 142nC @ 10V (higher at different voltage). Lower gate charge reduces switching losses and allows higher switching frequencies. Higher gate charge increases switching losses. Evaluate your gate driver current capability and switching frequency requirements when selecting among substitutes.

Q7: What does RoHS3 compliance mean for my application?

A: RoHS3 compliance indicates the device meets Restriction of Hazardous Substances Directive requirements, restricting lead, cadmium, mercury, and other hazardous materials. The IRL2505S is RoHS non-compliant. All recommended substitutes are ROHS3 compliant, making them suitable for applications requiring environmental compliance, particularly in European markets and regulated industries. Verify your application requirements before selecting non-compliant alternatives.

Q8: Can I use IPB081N06L3GATMA1 or IPB090N06N3GATMA1 as substitutes?

A: These Infineon OptiMOS™ series devices are not recommended as primary substitutes. IPB081N06L3GATMA1 and IPB090N06N3GATMA1 are rated for 60V Vdss with only 50A continuous drain current, significantly lower than the IRL2505S 104A specification. These parts are suitable only for applications where 50A current capacity is sufficient and higher voltage rating (60V) is acceptable. They do not provide equivalent current handling capability.

Q9: What is the significance of input capacitance (Ciss) differences?

A: Input capacitance affects gate charge requirements and switching speed. The IRL2505S specifies 5000pF @ 25V. Lower Ciss values (HUF75345S3ST at 4000pF, IPB090N06N3GATMA1 at 2900pF) reduce gate charge and improve switching speed. Higher Ciss values (FDB088N08 at 6595pF) increase gate charge and switching losses. Select based on your switching frequency and gate driver current capability.

Q10: Is IPB50N10S3L16ATMA1 suitable for IRL2505S replacement?

A: IPB50N10S3L16ATMA1 is not recommended as a substitute. This device is rated for 100V Vdss with 50A continuous drain current. The 100V rating significantly exceeds the IRL2505S 55V specification, and the 50A current rating is substantially lower than the original 104A. This part is suitable only for high-voltage applications where 50A current capacity is acceptable.

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