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IRL1404SPBF N-Channel 40V 160A MOSFET Equivalent & Substitute Parts
Part Overview
The IRL1404SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage and 160A continuous drain current in a D2PAK surface mount package. This device is part of the HEXFET® series and is currently discontinued at DiGi Electronics, with 15,126 pieces available in new original stock. The part operates across a temperature range of -55°C to 175°C and is RoHS3 compliant with MSL 1 (unlimited moisture sensitivity level).
Due to the discontinued status of the IRL1404SPBF, identifying functionally equivalent substitute parts is essential for design continuity, production planning, and long-term component sourcing. Substitute parts must maintain compatibility across critical electrical parameters including drain-to-source voltage, continuous drain current rating, on-resistance characteristics, and physical packaging.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Drain to Source Voltage (Vdss) | 40 | V |
| Current - Continuous Drain (Id) @ 25°C | 160 | A (Tc) |
| Rds On (Max) @ Id, Vgs | 4 | mOhm @ 95A, 10V |
| Vgs(th) (Max) @ Id | 3 | V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 140 | nC @ 5V |
| Vgs (Max) | ±20 | V |
| Input Capacitance (Ciss) (Max) @ Vds | 6600 | pF @ 25V |
| Power Dissipation (Max) | 3.8 (Ta), 200 (Tc) | W |
| Operating Temperature | -55 to 175 | °C (TJ) |
| Package / Case | TO-263-3, D2PAK | - |
| Mounting Type | Surface Mount | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of the IRL1404SPBF is determined by strict alignment of the following critical parameters:
Primary Substitution Criteria:
- Drain-to-Source Voltage (Vdss): Must equal 40V
- Continuous Drain Current (Id): Must equal or exceed 160A at Tc
- Package Type: Must be D2PAK or TO-263-3 (surface mount, 2 leads + tab)
- Operating Temperature Range: Must span -55°C to 175°C (TJ)
- On-Resistance (Rds On): Must not exceed 4mOhm at specified gate voltage and current conditions
- Gate Threshold Voltage (Vgs(th)): Must be compatible with 3V specification
- Maximum Gate Voltage (Vgs): Must support ±20V operation
Secondary Compatibility Parameters:
- Gate Charge (Qg): Lower values reduce switching losses; values up to 170 nC are acceptable
- Input Capacitance (Ciss): Values between 3850 pF and 9000 pF maintain circuit performance
- Power Dissipation: Minimum 200W (Tc) required for thermal management equivalence
- RoHS and REACH Compliance: All substitutes must maintain ROHS3 compliance
Substitute parts are grouped into two categories:
Category A - Direct Current Rating Match (160A): Parts maintaining the exact 160A continuous drain current specification with equivalent or superior on-resistance characteristics.
Category B - Reduced Current Rating (50A to 120A): Parts with lower continuous drain current ratings suitable for applications with reduced current demands or as secondary alternatives where thermal headroom permits.
Parameter Comparison
| Part Number | Manufacturer | Vdss (V) | Id @ 25°C (A) | Rds On (mOhm) | Vgs(th) (V) | Qg (nC) | Ciss (pF) | Power Diss. (W) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|---|
| IRL1404SPBF | Infineon | 40 | 160 | 4.0 @ 95A, 10V | 3 @ 250µA | 140 @ 5V | 6600 @ 25V | 200 (Tc) | D2PAK | Discontinued |
| STB270N4F3 | STMicroelectronics | 40 | 160 | 2.5 @ 80A, 10V | 4 @ 250µA | 150 @ 10V | 7400 @ 25V | 330 (Tc) | D2PAK | Active |
| IXTA160N04T2 | IXYS | 40 | 160 | 5.0 @ 50A, 10V | 4 @ 250µA | 79 @ 10V | 4640 @ 25V | 250 (Tc) | TO-263AA | Active |
| STB100NF04T4 | STMicroelectronics | 40 | 120 | 4.6 @ 50A, 10V | 4 @ 250µA | 150 @ 10V | 5100 @ 25V | 300 (Tc) | D2PAK | Active |
| STB120N4F6 | STMicroelectronics | 40 | 80 | 4.0 @ 40A, 10V | 4 @ 250µA | 65 @ 10V | 3850 @ 25V | 110 (Tc) | D2PAK | Active |
| STB120N4LF6 | STMicroelectronics | 40 | 80 | 4.0 @ 40A, 10V | 3 @ 250µA | 80 @ 10V | 4300 @ 25V | 110 (Tc) | D2PAK | Active |
| STB170NF04 | STMicroelectronics | 40 | 80 | 5.0 @ 40A, 10V | 4 @ 250µA | 170 @ 10V | 9000 @ 25V | 300 (Tc) | D2PAK | Active |
| BUK964R4-40B,118 | Nexperia USA Inc. | 40 | 75 | 4.0 @ 25A, 10V | 2 @ 1mA | 64 @ 5V | 7124 @ 25V | 254 (Tc) | D2PAK | Active |
| SQM50N04-4M0L_GE3 | Vishay Siliconix | 40 | 50 | 4.0 @ 20A, 10V | 2.5 @ 250µA | 130 @ 10V | 6100 @ 25V | 150 (Tc) | TO-263 (D2PAK) | Active |
Engineering Selection Recommendations
Primary Substitute - Direct Replacement:
The STB270N4F3 (STMicroelectronics) is the primary recommended substitute for the IRL1404SPBF. This part maintains the exact 40V/160A electrical specification and D2PAK package compatibility. The STB270N4F3 offers superior on-resistance performance (2.5 mOhm versus 4.0 mOhm), resulting in lower power dissipation and improved thermal efficiency. The device is AEC-Q101 qualified for automotive applications and carries active product status with 7,230 pieces in stock. RoHS3 compliance and MSL 1 rating ensure manufacturing compatibility.
Secondary Substitute - Current Rating Consideration:
The IXTA160N04T2 (IXYS) provides an alternative direct current match at 160A with 40V rating in a TO-263AA package variant. This part is actively produced with 916 units in stock. The slightly higher on-resistance (5.0 mOhm) and lower gate charge (79 nC) may be advantageous in applications prioritizing switching speed over conduction losses. Operating temperature range and RoHS3 compliance match the original specification.
Reduced Current Alternatives:
For applications where the full 160A rating is not required:
- STB100NF04T4 (STMicroelectronics): 120A rating, 300W power dissipation, AEC-Q101 qualified, 15,265 units in stock
- STB120N4F6 or STB120N4LF6 (STMicroelectronics): 80A rating, lower gate charge (65-80 nC), suitable for lower-current designs
- BUK964R4-40B,118 (Nexperia): 75A rating, TrenchMOS™ technology, AEC-Q101 qualified, automotive grade
- SQM50N04-4M0L_GE3 (Vishay Siliconix): 50A rating, TrenchFET® technology, AEC-Q101 qualified
All recommended substitutes maintain the 40V Vdss specification, D2PAK or compatible TO-263 packaging, -55°C to 175°C operating range, and RoHS3 compliance. Selection should be based on actual circuit current requirements and thermal design margins.
Frequently Asked Questions (FAQ)
Q1: Can the STB270N4F3 be used as a direct drop-in replacement for the IRL1404SPBF?
A: Yes. Both parts share identical 40V/160A electrical ratings, D2PAK packaging, and operating temperature range (-55°C to 175°C). The STB270N4F3 features lower on-resistance (2.5 mOhm versus 4.0 mOhm), which reduces conduction losses and improves efficiency. PCB layout and thermal management remain compatible. No circuit modifications are required.
Q2: What is the difference between D2PAK and TO-263-3 packaging?
A: D2PAK and TO-263-3 are equivalent designations for the same surface mount package with 2 leads plus a thermal tab. All substitute parts listed use this identical package footprint, ensuring mechanical and thermal compatibility on existing PCBs.
Q3: Why do some substitute parts have lower current ratings (50A to 120A) than the original 160A specification?
A: Lower-rated parts are suitable for applications where circuit design does not require the full 160A capability. These alternatives offer advantages such as lower gate charge (faster switching), reduced input capacitance, or improved on-resistance characteristics. Selection depends on actual circuit current demands and thermal headroom.
Q4: Are all substitute parts RoHS3 compliant?
A: Yes. All recommended substitute parts carry RoHS3 compliance certification, matching the original IRL1404SPBF specification. This ensures compatibility with modern manufacturing and environmental regulations.
Q5: What does AEC-Q101 qualification mean?
A: AEC-Q101 is an automotive electronics qualification standard. Parts bearing this certification have undergone rigorous testing for reliability, temperature cycling, and long-term performance in automotive applications. STMicroelectronics, Nexperia, and Vishay parts in this list carry AEC-Q101 qualification, indicating suitability for demanding industrial and automotive environments.
Q6: How do gate charge (Qg) differences affect circuit performance?
A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge (64-79 nC) reduces switching losses and allows faster switching speeds, beneficial in high-frequency applications. Higher gate charge (140-170 nC) may increase switching losses but does not affect DC conduction performance. Selection depends on circuit switching frequency and driver capability.
Q7: What is the significance of on-resistance (Rds On) in MOSFET selection?
A: On-resistance directly determines conduction losses (I²R losses) when the MOSFET is in the on-state. Lower Rds On reduces heat generation and improves efficiency. The STB270N4F3 (2.5 mOhm) offers superior efficiency compared to the original IRL1404SPBF (4.0 mOhm). For high-current applications, even small differences in Rds On significantly impact thermal performance.
Q8: Can I use a 40A or 50A rated part in a 160A circuit?
A: No. Using an undersized part in a high-current circuit will cause excessive heating, potential device failure, and circuit malfunction. Current rating must equal or exceed the maximum circuit current. Reduced-current alternatives are suitable only for circuits designed for lower current operation.
Q9: What is MSL 1 (Unlimited) moisture sensitivity level?
A: MSL 1 indicates the component has unlimited shelf life and requires no special moisture protection during storage or handling. This simplifies inventory management and reduces manufacturing constraints compared to higher MSL ratings.
Q10: Are there any thermal management differences between substitute parts?
A: Yes. Power dissipation ratings vary: IRL1404SPBF (200W Tc), STB270N4F3 (330W Tc), IXTA160N04T2 (250W Tc). Higher power dissipation ratings indicate better thermal performance at the same current levels. The STB270N4F3's superior rating reflects its lower on-resistance and improved thermal design, allowing operation at higher currents or ambient temperatures without exceeding junction temperature limits.
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