IRL1104PBF N-Channel MOSFET 40V 104A Equivalent & Substitute Parts

Part Overview

The IRL1104PBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 104A continuous drain current at 25°C. This device is packaged in TO-220AB through-hole configuration and belongs to the HEXFET® series. The part is currently listed as obsolete, making identification of functionally equivalent substitutes necessary for ongoing design support and production continuity. Substitute parts must maintain compatibility with the original electrical specifications and mechanical form factor to ensure direct replacement capability.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	104	A
On-State Resistance (Rds On) @ 62A, 10V	8	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 4.5V	68	nC
Power Dissipation (Max)	167	W
Operating Temperature Range	-55 to 175	°C
Package Type	TO-220-3
Mounting Type	Through Hole

Substitute Part Grouping Explanation

Substitution eligibility for the IRL1104PBF is determined by the following critical parameters:

Mandatory Compatibility Criteria:

Drain-to-Source Voltage (Vdss): Must equal 40V
Package/Case: Must be TO-220-3 through-hole configuration
Mounting Type: Must be through-hole
FET Type: Must be N-Channel
Technology: Must be MOSFET (Metal Oxide)
Operating Temperature Range: Must support -55°C to 175°C

Performance Parameters for Substitution:

Continuous Drain Current (Id): Substitute must meet or exceed 104A at 25°C
On-State Resistance (Rds On): Lower values indicate improved performance
Gate Charge (Qg): Lower values reduce switching losses
Power Dissipation: Higher ratings provide thermal margin

All four substitute parts listed (IRL1404ZPBF, PSMN8R0-40PS,127, STP150NF04, STP95N4F3) meet the mandatory compatibility criteria. Variations in drain current, on-state resistance, and gate charge reflect different design optimizations within the same voltage and package class.

Parameter Comparison

Parameter	IRL1104PBF	IRL1404ZPBF	PSMN8R0-40PS,127	STP150NF04	STP95N4F3
Manufacturer	Infineon	Infineon	Nexperia	STMicroelectronics	STMicroelectronics
Vdss (V)	40	40	40	40	40
Id @ 25°C (A)	104	75	77	80	80
Rds On (mOhm)	8 @ 62A, 10V	3.1 @ 75A, 10V	7.6 @ 25A, 10V	7 @ 40A, 10V	6.2 @ 40A, 10V
Vgs(th) (V)	1 @ 250µA	2.7 @ 250µA	4 @ 1mA	4 @ 250µA	4 @ 250µA
Qg (nC)	68 @ 4.5V	110 @ 5V	21 @ 10V	150 @ 10V	54 @ 10V
Power Dissipation (W)	167	230	86	300	110
Package	TO-220-3	TO-220-3	TO-220-3	TO-220-3	TO-220-3
Product Status	Obsolete	Active	Obsolete	Active	Active
Operating Temp (°C)	-55 to 175	-55 to 175	-55 to 175	-55 to 175	-55 to 175

Engineering Selection Recommendations

IRL1404ZPBF (Infineon Technologies)

Product Status: Active
RoHS3 Compliant
Recommended for applications requiring Infineon HEXFET® series continuity
Lower drain current (75A) than original; suitable for designs with current margin
Superior on-state resistance (3.1 mOhm) reduces conduction losses
Higher gate charge (110 nC) increases switching losses compared to original

PSMN8R0-40PS,127 (Nexperia USA Inc.)

Product Status: Obsolete
RoHS3 Compliant
Lowest gate charge (21 nC) minimizes switching losses
Drain current (77A) below original specification; verify application headroom
Lowest power dissipation rating (86W) requires thermal analysis
Not recommended for new designs due to obsolete status

STP150NF04 (STMicroelectronics)

Product Status: Active
RoHS3 Compliant
STripFET™ II series technology
Highest power dissipation rating (300W) provides maximum thermal margin
Drain current (80A) below original; acceptable for most applications
Moderate on-state resistance (7 mOhm) and gate charge (150 nC)
Recommended for thermal-constrained applications

STP95N4F3 (STMicroelectronics)

Product Status: Active
RoHS3 Compliant
STripFET™ III series technology (latest generation)
Balanced performance: 80A drain current, 6.2 mOhm Rds On, 54 nC gate charge
Moderate power dissipation (110W) suitable for standard applications
Recommended as primary substitute for new designs

Frequently Asked Questions (FAQ)

Q: Can IRL1404ZPBF directly replace IRL1104PBF in all applications?

A: IRL1404ZPBF is mechanically and electrically compatible (same 40V rating, TO-220-3 package, same operating temperature range). However, the drain current is rated at 75A versus 104A for the original. Direct replacement is valid only if the application current requirement does not exceed 75A. Verify circuit current demands before substitution.

Q: Why does PSMN8R0-40PS,127 have lower gate charge than other substitutes?

A: Gate charge (Qg) is a design parameter that varies with die architecture and process technology. Lower gate charge reduces switching losses and improves efficiency in high-frequency applications. However, PSMN8R0-40PS,127 is obsolete and has the lowest power dissipation rating (86W), which may limit thermal performance in high-power applications.

Q: What is the difference between STP150NF04 and STP95N4F3?

A: Both are STMicroelectronics TO-220-3 40V N-Channel MOSFETs. STP150NF04 uses STripFET™ II technology with higher power dissipation (300W) and higher gate charge (150 nC). STP95N4F3 uses STripFET™ III technology (newer generation) with lower gate charge (54 nC) and lower power dissipation (110W). STP95N4F3 is more efficient for switching applications; STP150NF04 is better for high thermal load scenarios.

Q: Are all substitutes RoHS3 compliant?

A: Yes. IRL1404ZPBF, STP150NF04, and STP95N4F3 are all RoHS3 compliant. PSMN8R0-40PS,127 is also RoHS3 compliant. The original IRL1104PBF does not specify RoHS status. All substitutes meet REACH unaffected and EAR99 export classification requirements.

Q: Can I use a substitute with lower drain current rating than the original?

A: Substitutes with lower drain current ratings (IRL1404ZPBF at 75A, PSMN8R0-40PS,127 at 77A, STP150NF04 and STP95N4F3 at 80A) are acceptable only if the maximum continuous drain current in your application does not exceed the substitute's rating. Exceeding the rated current causes thermal runaway and device failure. Perform circuit analysis to confirm current margins.

Q: Which substitute is best for new product designs?

A: STP95N4F3 is recommended for new designs. It is active (not obsolete), RoHS3 compliant, uses the latest STripFET™ III technology, and offers balanced performance with efficient gate charge (54 nC) and adequate power dissipation (110W). IRL1404ZPBF is an alternative if Infineon HEXFET® series continuity is required.

Q: Do all substitutes use the same pinout?

A: Yes. All substitutes use TO-220-3 package with identical pinout: Gate (pin 1), Drain (pin 2), Source (pin 3). Physical and electrical pin compatibility is guaranteed across all listed substitutes.

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