IRL1004STRR N-Channel 40V 130A MOSFET Equivalent & Substitute Parts

Part Overview

The IRL1004STRR is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 130A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for new designs and production continuity. Substitute parts must maintain compatibility across electrical ratings, thermal characteristics, and mechanical packaging to ensure direct replacement capability.

Key Parameters

Parameter	IRL1004STRR Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	130	A (Tc)
On-State Resistance (Rds On) @ 78A, 10V	6.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 4.5V	100	nC
Maximum Gate Voltage (Vgs)	±16	V
Input Capacitance (Ciss) @ 25V	5330	pF
Power Dissipation (Tc)	200	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitute parts for the IRL1004STRR are selected based on the following critical parameters that define functional equivalence:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 40V minimum (allows 55V rated devices for higher voltage margin)
Continuous Drain Current (Id): 70A or higher (accommodates lower current ratings with thermal derating)
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C (TJ)
FET Type: N-Channel MOSFET technology

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower values preferred for reduced power dissipation
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation Rating: Minimum 86W (Tc) for thermal management

Substitutes are grouped into two categories: 40V-rated devices (direct voltage replacement) and 55V-rated devices (higher voltage margin with same current class). All substitute parts maintain D2PAK packaging and -55°C to 175°C operating range.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Vgs(th) (V)	Qg (nC)	Ciss (pF)	Power Diss. (W)	Status
IRL1004STRR	Infineon	40	130	6.5	1	100	5330	200	Obsolete
BUK765R2-40B,118	NXP USA Inc.	40	75	5.2	4	52	3789	203	Active
BUK9609-40B,118	Nexperia USA Inc.	40	75	7	2	32	3600	157	Active
FDB8444	Fairchild Semiconductor	40	70	5.5	4	128	8035	167	Active
NTB5405NT4G	onsemi	40	116	5.8	3.5	88	4000	150	Obsolete
PSMN8R0-40BS,118	Nexperia USA Inc.	40	77	7.6	4	21	1262	86	Active
STB120N4LF6	STMicroelectronics	40	80	4	3	80	4300	110	Active
STB140NF55T4	STMicroelectronics	55	80	8	4	142	5300	300	Active
STB150NF55T4	STMicroelectronics	55	120	6	4	190	4400	300	Active
STB85NF55T4	STMicroelectronics	55	80	8	4	150	3700	300	Active

Engineering Selection Recommendations

40V-Rated Direct Substitutes (Recommended for Voltage-Constrained Applications):

STB120N4LF6 (STMicroelectronics) is the preferred 40V substitute. It provides 80A continuous drain current with superior on-state resistance of 4mOhm, lower gate charge (80nC), and active product status with AEC-Q101 automotive qualification. Power dissipation of 110W (Tc) is adequate for most applications requiring the IRL1004STRR.

BUK765R2-40B,118 (NXP USA Inc.) offers 75A current rating with 5.2mOhm on-state resistance and 203W power dissipation. Active status and TrenchMOS™ technology provide design continuity. Gate charge of 52nC reduces switching losses compared to the original device.

BUK9609-40B,118 (Nexperia USA Inc.) delivers 75A with 7mOhm on-state resistance, 32nC gate charge, and 157W power dissipation. Active product status with AEC-Q101 qualification and RoHS3 compliance supports modern supply chain requirements.

55V-Rated Substitutes (Recommended for Voltage Margin and Current Performance):

STB150NF55T4 (STMicroelectronics) provides the closest current match at 120A (Tc) with 55V rating, 6mOhm on-state resistance, and 300W power dissipation. Active status, RoHS3 compliance, and STripFET™ II technology ensure long-term availability. Higher voltage rating provides design margin for transient overvoltage conditions.

STB140NF55T4 (STMicroelectronics) offers 80A at 55V with 8mOhm on-state resistance and 300W power dissipation. Active status and automotive qualification support production environments requiring AEC-Q101 compliance.

Lower-Current Alternatives (Thermal Derating Required):

PSMN8R0-40BS,118 (Nexperia USA Inc.) rated for 77A with 7.6mOhm on-state resistance and 86W power dissipation. Lowest input capacitance (1262pF) and minimal gate charge (21nC) reduce gate drive complexity. Suitable for applications with reduced current demands or enhanced thermal management.

FDB8444 (Fairchild Semiconductor) provides 70A at 40V with 5.5mOhm on-state resistance and 167W power dissipation. Active status supports ongoing production. Higher input capacitance (8035pF) requires gate drive circuit verification.

Obsolete Alternative (Not Recommended for New Designs):

NTB5405NT4G (onsemi) rated for 116A at 40V with 5.8mOhm on-state resistance. Obsolete status disqualifies this part for new production despite favorable electrical characteristics.

Frequently Asked Questions (FAQ)

Q: Can I use a 55V-rated MOSFET as a direct replacement for the 40V IRL1004STRR?

A: Yes. Higher voltage-rated MOSFETs (55V) are electrically compatible with 40V applications. The higher voltage rating provides additional margin for transient overvoltage protection without affecting normal operation at 40V. All substitute parts maintain identical D2PAK packaging and operating temperature range (-55°C to 175°C).

Q: What is the significance of on-state resistance (Rds On) when selecting a substitute?

A: On-state resistance directly determines power dissipation and heat generation. Lower Rds On values reduce I²R losses. The IRL1004STRR specifies 6.5mOhm at 78A, 10V. Substitute parts with lower Rds On (such as STB120N4LF6 at 4mOhm) improve efficiency. Higher Rds On values (such as PSMN8R0-40BS,118 at 7.6mOhm) require thermal derating or enhanced cooling.

Q: Why do some substitutes have lower continuous drain current ratings than the IRL1004STRR?

A: The IRL1004STRR is rated for 130A continuous drain current, which is exceptionally high. Most active alternatives are rated 70A to 120A. Lower current ratings do not prevent substitution if the application's actual current demand is within the substitute's rating. Thermal management and circuit design must accommodate the substitute's power dissipation characteristics.

Q: What is gate charge (Qg) and how does it affect circuit design?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower gate charge (such as BUK9609-40B,118 at 32nC) reduces gate drive power requirements and switching losses. Higher gate charge (such as FDB8444 at 128nC) requires more robust gate drive circuitry. The IRL1004STRR specifies 100nC at 4.5V.

Q: Are all substitute parts RoHS compliant?

A: Most active substitutes are RoHS3 compliant (BUK9609-40B,118, PSMN8R0-40BS,118, STB120N4LF6, STB140NF55T4, STB150NF55T4, STB85NF55T4). The original IRL1004STRR is RoHS non-compliant. Verify RoHS compliance requirements for your application before final part selection.

Q: Can I use NTB5405NT4G as a substitute despite its obsolete status?

A: NTB5405NT4G is not recommended for new designs due to obsolete product status. While electrical characteristics are favorable (116A at 40V with 5.8mOhm Rds On), obsolete parts face supply discontinuation and may have limited availability. Select from active alternatives to ensure long-term production continuity.

Q: What is the difference between automotive-qualified parts (AEC-Q101) and standard parts?

A: AEC-Q101 qualification indicates the part meets automotive industry reliability and quality standards. Parts such as BUK765R2-40B,118, BUK9609-40B,118, and STB120N4LF6 carry AEC-Q101 qualification, making them suitable for automotive and high-reliability applications. Standard parts lack this certification but are acceptable for general industrial use.

Q: How do I determine if a substitute's power dissipation rating is adequate?

A: Calculate application power dissipation using P = I²Rds(on). For example, at 80A with 4mOhm (STB120N4LF6): P = (80)² × 0.004 = 25.6W. Compare this to the part's power dissipation rating (110W for STB120N4LF6). Ensure adequate thermal management and verify junction temperature remains within -55°C to 175°C operating range.

Q: What packaging considerations apply to D2PAK substitutes?

A: All substitute parts use D2PAK (TO-263-3) surface mount packaging with identical pinout and thermal tab configuration. PCB layout, thermal vias, and heatsink mounting are directly compatible. No circuit board redesign is required for mechanical compatibility.

Q: Which substitute offers the best balance of current rating and on-state resistance?

A: STB150NF55T4 provides optimal balance with 120A continuous drain current (closest to IRL1004STRR's 130A), 6mOhm on-state resistance, and 300W power dissipation. Active status, RoHS3 compliance, and 55V rating provide design margin and long-term availability. This part is recommended for applications requiring maximum current capacity with modern supply chain support.

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