IRL1004STRL N-Channel 40V 130A MOSFET Equivalent & Substitute Parts

Part Overview

The IRL1004STRL is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage with 130A continuous drain current in the D2PAK surface mount package. This device is part of the HEXFET® series and is classified as obsolete. Due to its obsolete status, equivalent and substitute parts from active manufacturers are necessary to maintain design continuity and ensure long-term component availability for new production and field replacements.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	130	A (Tc)
On-State Resistance (Rds On Max) @ 10V	6.5	mOhm @ 78A
Gate Threshold Voltage (Vgs(th)) Max	1	V @ 250µA
Gate Charge (Qg) Max @ 4.5V	100	nC
Input Capacitance (Ciss) Max @ 25V	5330	pF
Power Dissipation Max (Tc)	200	W
Operating Temperature Range	-55 to 175	°C (TJ)
Package Type	D2PAK (TO-263-3)	Surface Mount
FET Type	N-Channel	—
Technology	MOSFET (Metal Oxide)	—

Substitute Part Grouping Explanation

Substitution of the IRL1004STRL is determined by the following critical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): 40V minimum
Continuous Drain Current (Id): 70A or higher at Tc
Package Type: D2PAK (TO-263-3) surface mount
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature Range: -55°C to 175°C minimum

Secondary Compatibility Factors:

On-State Resistance (Rds On): Lower or equivalent values preferred
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Lower values improve switching speed
Power Dissipation capability: 80W or higher at Tc

Substitute parts are grouped into two categories based on drain current capability and voltage rating alignment with the IRL1004STRL specifications.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id (A) @ Tc	Rds On Max (mOhm)	Qg Max (nC)	Ciss Max (pF)	Pd Max (W)	Package	Status
IRL1004STRL	Infineon	40	130	6.5 @ 78A, 10V	100 @ 4.5V	5330 @ 25V	200	D2PAK	Obsolete
BUK765R2-40B,118	NXP USA Inc.	40	75	5.2 @ 25A, 10V	52 @ 10V	3789 @ 25V	203	D2PAK	Active
BUK9609-40B,118	Nexperia USA Inc.	40	75	7 @ 25A, 10V	32 @ 5V	3600 @ 25V	157	D2PAK	Active
FDB8444	Fairchild Semiconductor	40	70	5.5 @ 70A, 10V	128 @ 10V	8035 @ 25V	167	D2PAK	Active
PSMN8R0-40BS,118	Nexperia USA Inc.	40	77	7.6 @ 25A, 10V	21 @ 10V	1262 @ 12V	86	D2PAK	Active
STB120N4LF6	STMicroelectronics	40	80	4 @ 40A, 10V	80 @ 10V	4300 @ 25V	110	D2PAK	Active
2SK3800VL	Sanken Electric USA Inc.	40	70	6 @ 35A, 10V	—	5100 @ 10V	80	TO-220S	Active
STB140NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	142 @ 10V	5300 @ 25V	300	D2PAK	Active
STB150NF55T4	STMicroelectronics	55	120	6 @ 60A, 10V	190 @ 10V	4400 @ 25V	300	D2PAK	Active
STB85NF55T4	STMicroelectronics	55	80	8 @ 40A, 10V	150 @ 10V	3700 @ 25V	300	D2PAK	Active

Substitute Part Grouping Explanation (Continued)

Group 1: Direct 40V Substitutes (Recommended Primary Alternatives)

Parts in this group maintain the 40V Vdss rating of the IRL1004STRL and are packaged in D2PAK surface mount format. These parts are suitable for applications where the 40V voltage rating is a design requirement:

BUK765R2-40B,118 (NXP): 75A continuous drain current, 5.2 mOhm Rds On, automotive-grade with AEC-Q101 qualification
BUK9609-40B,118 (Nexperia): 75A continuous drain current, 7 mOhm Rds On, automotive-grade with AEC-Q101 qualification, lower gate charge (32 nC)
FDB8444 (Fairchild): 70A continuous drain current, 5.5 mOhm Rds On, PowerTrench® series
PSMN8R0-40BS,118 (Nexperia): 77A continuous drain current, 7.6 mOhm Rds On, significantly lower input capacitance (1262 pF)
STB120N4LF6 (STMicroelectronics): 80A continuous drain current, 4 mOhm Rds On, automotive-grade with AEC-Q101 qualification, DeepGATE™ and STripFET™ VI series

Group 2: Higher Voltage 55V Substitutes (Extended Voltage Margin)

Parts in this group provide 55V Vdss rating, offering increased voltage margin for applications with transient overvoltage conditions. All maintain D2PAK packaging:

STB140NF55T4 (STMicroelectronics): 80A continuous drain current, 8 mOhm Rds On, STripFET™ II series
STB150NF55T4 (STMicroelectronics): 120A continuous drain current, 6 mOhm Rds On, STripFET™ II series, closest current rating to IRL1004STRL
STB85NF55T4 (STMicroelectronics): 80A continuous drain current, 8 mOhm Rds On, STripFET™ II series

Group 3: Alternative Package (TO-220S)

2SK3800VL (Sanken Electric): 70A continuous drain current, 6 mOhm Rds On, TO-220S package (not D2PAK), suitable only if PCB layout permits through-hole or alternative surface mount configuration

Engineering Selection Recommendations

For Direct Replacement (40V Applications):

STB120N4LF6 is the primary recommended substitute. It provides 80A continuous drain current at 40V with superior on-state resistance (4 mOhm), automotive qualification (AEC-Q101), and active product status. The lower gate charge (80 nC) and input capacitance (4300 pF) improve switching performance compared to the IRL1004STRL.
BUK765R2-40B,118 is an alternative with 75A continuous drain current, 5.2 mOhm Rds On, automotive qualification (AEC-Q101), and active status. This part is suitable for applications requiring automotive-grade reliability.
BUK9609-40B,118 offers 75A continuous drain current with the lowest gate charge (32 nC @ 5V) among 40V options, reducing switching losses in high-frequency applications. Automotive qualification (AEC-Q101) and active status support long-term availability.

For Applications Requiring Voltage Margin:

STB150NF55T4 provides the closest current rating (120A) to the IRL1004STRL while offering 55V voltage rating. The 6 mOhm Rds On and 300W power dissipation capability support high-current applications. Active status and RoHS3 compliance ensure supply continuity.
STB140NF55T4 and STB85NF55T4 are alternative 55V options with 80A continuous drain current, suitable for applications where current derating is acceptable in exchange for increased voltage margin.

For Specialized Applications:

PSMN8R0-40BS,118 is recommended for applications sensitive to input capacitance, offering the lowest Ciss (1262 pF @ 12V) among all substitutes, improving switching speed and reducing gate drive requirements.

Compliance and Availability:

All recommended substitutes are active products with RoHS3 compliance (except FDB8444, which is active but RoHS status not specified). STMicroelectronics, NXP, and Nexperia parts carry automotive qualification (AEC-Q101) where specified, supporting mission-critical applications. Inventory levels range from 1,029 to 29,380 pieces, ensuring adequate supply for production requirements.

Frequently Asked Questions (FAQ)

Q1: Can I use a 55V rated MOSFET as a direct replacement for the 40V IRL1004STRL?

A: Yes, 55V rated MOSFETs such as STB150NF55T4, STB140NF55T4, and STB85NF55T4 are electrically compatible with 40V applications. The higher voltage rating provides additional safety margin for transient overvoltage conditions. However, verify that the application circuit does not rely on the specific gate charge, input capacitance, or on-state resistance characteristics of the original part.

Q2: What is the significance of the D2PAK package compatibility?

A: The D2PAK (TO-263-3) package is a surface mount format with standardized pin configuration and thermal characteristics. All recommended 40V and 55V substitutes maintain D2PAK packaging, ensuring direct PCB footprint compatibility without layout modifications. The 2SK3800VL uses TO-220S packaging and requires different PCB layout considerations.

Q3: How do I select between parts with different on-state resistance (Rds On) values?

A: Lower Rds On values reduce conduction losses and heat dissipation in the MOSFET. For applications with high continuous drain current or stringent thermal requirements, select parts with lower Rds On. STB120N4LF6 (4 mOhm) and BUK765R2-40B,118 (5.2 mOhm) offer superior performance compared to parts with 6-8 mOhm ratings. Verify that the application's gate drive circuit can support the selected part's gate charge requirements.

Q4: What is the importance of gate charge (Qg) in MOSFET selection?

A: Gate charge determines the energy required to switch the MOSFET on and off. Lower gate charge reduces switching losses and allows faster switching speeds. BUK9609-40B,118 (32 nC @ 5V) and PSMN8R0-40BS,118 (21 nC @ 10V) offer significantly lower gate charge than the IRL1004STRL (100 nC @ 4.5V), improving efficiency in switching applications. Ensure the gate drive circuit has sufficient current capability to charge the gate within the required switching time.

Q5: Are automotive-qualified parts necessary for my application?

A: Automotive-qualified parts (AEC-Q101) undergo rigorous testing for reliability, temperature cycling, and long-term stability. These parts are recommended for mission-critical, high-reliability, or automotive applications. For consumer or industrial applications with less stringent reliability requirements, non-automotive-qualified active parts remain suitable alternatives.

Q6: What does RoHS3 compliance mean for component selection?

A: RoHS3 compliance indicates the part meets Restriction of Hazardous Substances regulations, restricting lead, cadmium, mercury, and other hazardous materials. RoHS3-compliant parts (BUK9609-40B,118, PSMN8R0-40BS,118, STB120N4LF6, STB140NF55T4, STB150NF55T4, STB85NF55T4) are required for applications subject to environmental regulations or customer specifications. The IRL1004STRL is RoHS non-compliant due to its obsolete status.

Q7: How do I verify thermal performance when substituting MOSFETs?

A: Compare the power dissipation capability (Pd Max) and on-state resistance (Rds On) between the original and substitute parts. The IRL1004STRL specifies 200W (Tc) power dissipation. Substitutes such as BUK765R2-40B,118 (203W), STB140NF55T4 (300W), STB150NF55T4 (300W), and STB85NF55T4 (300W) provide equal or superior thermal performance. Verify that the PCB thermal design (copper area, via placement, heat sink attachment) remains adequate for the substitute part's thermal characteristics.

Q8: Can I use multiple lower-current MOSFETs in parallel to replace the IRL1004STRL?

A: Parallel MOSFET configurations are possible but require careful gate drive design to ensure equal current sharing and prevent thermal runaway. This approach is not recommended as a direct substitution strategy. Single-device substitutes such as STB150NF55T4 (120A) provide simpler circuit design and superior reliability compared to parallel configurations.

Q9: What inventory considerations should I account for when selecting a substitute?

A: All recommended substitutes are active products with substantial inventory availability (1,029 to 29,380 pieces). STB85NF55T4 offers the highest inventory (29,380 pieces), ensuring long-term supply security. Verify supplier lead times and minimum order quantities for production planning. The IRL1004STRL, classified as obsolete, has limited inventory (729 pieces) and should not be selected for new designs.

Q10: Are there any gate drive circuit modifications required when switching from IRL1004STRL to a substitute part?

A: Gate drive circuit modifications depend on the substitute part's gate charge (Qg) and gate threshold voltage (Vgs(th)). Most recommended substitutes have similar or lower gate charge, allowing existing gate drive circuits to function without modification. However, verify that the gate drive voltage (typically 10V or 5V/10V) matches the substitute part's specifications. Parts with significantly different Vgs(th) values may require gate resistor adjustments to optimize switching speed and reduce EMI.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message