IRL1004SPBF N-Channel 40V 130A MOSFET Equivalent & Substitute Parts

Part Overview

The IRL1004SPBF is an N-Channel MOSFET manufactured by Infineon Technologies, rated for 40V drain-to-source voltage and 130A continuous drain current in a D2PAK surface mount package. This device is classified as obsolete, necessitating identification of active equivalent and substitute components for new designs and production continuity. The HEXFET® series device operates across a temperature range of -55°C to 175°C and is suitable for high-current switching applications requiring low on-resistance performance.

Key Parameters

Parameter	Value	Unit
Drain-to-Source Voltage (Vdss)	40	V
Continuous Drain Current (Id) @ 25°C	130	A
On-Resistance (Rds On) @ 78A, 10V	6.5	mOhm
Gate Threshold Voltage (Vgs(th)) @ 250µA	1	V
Gate Charge (Qg) @ 4.5V	100	nC
Maximum Gate Voltage (Vgs)	±16	V
Input Capacitance (Ciss) @ 25V	5330	pF
Power Dissipation (Tc)	200	W
Operating Temperature Range	-55 to 175	°C
Package Type	D2PAK (TO-263-3)	—
Mounting Type	Surface Mount	—
Product Status	Obsolete	—

Substitute Part Grouping Explanation

Substitution of the IRL1004SPBF is determined by the following critical electrical and mechanical parameters:

Primary Matching Criteria:

Drain-to-Source Voltage (Vdss): Must equal or exceed 40V
Package Type: D2PAK (TO-263-3) surface mount configuration
Operating Temperature Range: -55°C to 175°C minimum
Continuous Drain Current (Id): Minimum 100A to maintain design margin

Secondary Compatibility Factors:

On-Resistance (Rds On): Lower values preferred for thermal performance
Gate Charge (Qg): Lower values reduce switching losses
Input Capacitance (Ciss): Affects gate drive requirements
Power Dissipation capability: Minimum 150W (Tc) recommended

The substitute parts are grouped into two categories:

Category A - Direct Voltage Class Substitutes (40V Rating): These devices maintain the 40V Vdss specification and D2PAK package, with continuous drain currents ranging from 75A to 100A. These are suitable for applications where the original 130A rating provides design margin.

Category B - Higher Voltage Class Substitutes (55V Rating): These devices feature 55V Vdss rating with 80A to 120A continuous drain current. The elevated voltage rating provides additional design margin and is compatible with 40V circuit designs. These parts are listed in the original IRL1004SPBF substitute cross-reference.

Parameter Comparison

Part Number	Manufacturer	Vdss (V)	Id @ 25°C (A)	Rds On (mOhm)	Qg (nC)	Vgs(th) (V)	Package	Status
IRL1004SPBF	Infineon	40	130	6.5	100	1	D2PAK	Obsolete
BUK765R2-40B,118	NXP USA Inc.	40	75	5.2	52	4	D2PAK	Active
BUK9609-40B,118	Nexperia USA Inc.	40	75	7	32	2	D2PAK	Active
IXTA100N04T2	IXYS	40	100	7	25.5	4	TO-263AA	Active
PSMN8R0-40BS,118	Nexperia USA Inc.	40	77	7.6	21	4	D2PAK	Active
STB120N4LF6	STMicroelectronics	40	80	4	80	3	D2PAK	Active
STB140NF55T4	STMicroelectronics	55	80	8	142	4	D2PAK	Active
STB150NF55T4	STMicroelectronics	55	120	6	190	4	D2PAK	Active
STB85NF55T4	STMicroelectronics	55	80	8	150	4	D2PAK	Active

Engineering Selection Recommendations

For 40V Circuit Designs Requiring Closest Current Rating Match:

STB120N4LF6 (STMicroelectronics) is the preferred substitute for applications requiring continuous drain current near the original 130A specification. This device delivers 80A continuous current with superior on-resistance of 4mOhm at 40A/10V, reducing thermal dissipation. The part carries AEC-Q101 automotive qualification and active product status, ensuring long-term availability and supply chain stability.

For 40V Designs with Current Margin Tolerance:

BUK765R2-40B,118 (NXP USA Inc.) provides the lowest on-resistance (5.2mOhm) among 40V substitutes at 75A continuous current rating. This device features TrenchMOS™ technology and active status with high inventory availability (23,999 pcs). Automotive grade qualification (AEC-Q101) supports reliability-critical applications.

IXTA100N04T2 (IXYS) offers 100A continuous current with 7mOhm on-resistance in TO-263AA package configuration. The TrenchT2™ series device maintains full compatibility with D2PAK footprints and carries active product status with RoHS3 compliance.

For Applications Accepting 55V Voltage Class:

STB150NF55T4 (STMicroelectronics) matches the original 130A current specification most closely at 120A continuous drain current. The 55V rating provides additional design margin for transient voltage spikes. This device features 6mOhm on-resistance at 60A/10V and 300W power dissipation capability. AEC-Q101 qualification and active status ensure production continuity.

STB85NF55T4 (STMicroelectronics) and STB140NF55T4 (STMicroelectronics) provide 80A continuous current at 55V rating with identical 300W power dissipation. Both devices carry STripFET™ II series designation, AEC-Q101 qualification, and active product status.

Compliance and Certification Considerations:

All recommended substitutes maintain the following compliance attributes of the original IRL1004SPBF:

Operating temperature range: -55°C to 175°C
Moisture Sensitivity Level (MSL): 1 (Unlimited)
REACH Status: REACH Unaffected
ECCN: EAR99
HTSUS: 8541.29.0095

Devices with AEC-Q101 automotive qualification (BUK765R2-40B,118, BUK9609-40B,118, STB120N4LF6, STB140NF55T4, STB150NF55T4, STB85NF55T4) are recommended for applications requiring automotive-grade reliability and traceability.

Frequently Asked Questions (FAQ)

Q: Can I use a 55V rated MOSFET in a 40V circuit design?

A: Yes. The 55V rated devices (STB140NF55T4, STB150NF55T4, STB85NF55T4) are fully compatible with 40V circuit designs. The higher voltage rating provides additional margin for transient overvoltage conditions and does not degrade performance in 40V applications. These devices are listed in the original IRL1004SPBF cross-reference documentation.

Q: What is the significance of on-resistance (Rds On) in substitute selection?

A: On-resistance directly determines power dissipation and thermal performance. Lower Rds On values reduce I²R losses during conduction. The IRL1004SPBF specifies 6.5mOhm at 78A/10V. Substitute devices with lower Rds On (such as STB120N4LF6 at 4mOhm) improve efficiency, while higher values (7-8mOhm) require thermal design verification to ensure adequate heat dissipation within system constraints.

Q: Are all substitute parts available in D2PAK package?

A: Yes. All recommended substitutes are supplied in D2PAK (TO-263-3) surface mount package configuration, ensuring direct PCB footprint compatibility with the original IRL1004SPBF design. IXTA100N04T2 is specified as TO-263AA, which is mechanically and electrically equivalent to D2PAK.

Q: What is the difference between gate charge (Qg) specifications?

A: Gate charge represents the total charge required to switch the MOSFET from off to on state. Lower Qg values (such as PSMN8R0-40BS,118 at 21nC) reduce gate drive power requirements and enable faster switching transitions. Higher Qg values (such as STB150NF55T4 at 190nC) require more robust gate drive circuits but may offer improved EMI characteristics. Selection depends on gate driver capability and switching frequency requirements.

Q: Why do some substitutes have higher gate threshold voltage (Vgs(th))?

A: Gate threshold voltage varies by manufacturing process and technology node. The IRL1004SPBF specifies 1V at 250µA, while most substitutes specify 2-4V at 1mA test conditions. These differences reflect different measurement points and process technologies. All devices operate reliably with standard gate drive voltages (5V or 10V). Verify gate driver output voltage compatibility with selected substitute specifications.

Q: What does AEC-Q101 qualification mean for MOSFET selection?

A: AEC-Q101 is an automotive industry standard qualification that certifies MOSFET reliability under automotive operating conditions, including temperature cycling, humidity, and electrical stress testing. Devices carrying AEC-Q101 qualification (BUK765R2-40B,118, BUK9609-40B,118, STB120N4LF6, STB140NF55T4, STB150NF55T4, STB85NF55T4) are suitable for automotive and mission-critical applications requiring documented reliability traceability.

Q: Can I substitute a 75A rated device for the 130A IRL1004SPBF?

A: Substitution feasibility depends on actual circuit current requirements. If the design operates at continuous currents below 75A with adequate thermal margin, devices such as BUK765R2-40B,118 and BUK9609-40B,118 are acceptable. However, if the design requires the full 130A capability, select STB150NF55T4 (120A) or IXTA100N04T2 (100A) to maintain design margin. Thermal analysis is required to confirm adequate heat dissipation at peak operating current.

Q: What inventory status should I consider for production planning?

A: All recommended substitutes carry active product status with substantial inventory availability: STB120N4LF6 (15,465 pcs), STB150NF55T4 (10,200 pcs), STB85NF55T4 (29,380 pcs), BUK765R2-40B,118 (23,999 pcs), and BUK9609-40B,118 (6,346 pcs). The original IRL1004SPBF is obsolete with 1,404 pcs remaining in stock. Active status substitutes ensure long-term supply chain continuity for new production and design revisions.

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