IRGS4715DPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGS4715DPBF is a 650V IGBT manufactured by Infineon Technologies, rated for 21A collector current with 100W maximum power dissipation in a D2PAK surface mount package. This device is classified as obsolete, making identification of functionally equivalent alternatives necessary for ongoing design support and procurement continuity. The part operates across a junction temperature range of -40°C to 175°C and features standard input configuration with 30nC gate charge.

Substiute Parts

IRGS4715DPBF
Infineon TechnologiesIn Stock: 875IRGS4715DPBF Datasheet
IRGS4715DPBF
Current Part
IKB15N60TATMA1
Infineon TechnologiesIn Stock: 2333IKB15N60TATMA1 Datasheet
IKB15N60TATMA1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 21 A
Current - Collector Pulsed (Icm) 24 A
Power - Max 100 W
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 8A V
Gate Charge 30 nC
Switching Energy (on/off) 200µJ / 90µJ µJ
Td (on/off) @ 25°C 30ns / 100ns ns
Reverse Recovery Time (trr) 86 ns
Operating Temperature Range (TJ) -40 to 175 °C
Package / Case TO-263-3, D2PAK -
Mounting Type Surface Mount -
Product Status Obsolete -

Substitute Part Grouping Explanation

Substitution of the IRGS4715DPBF is determined by the following critical parameters:

Voltage Rating Compatibility: The substitute must operate at or above the 650V collector-emitter breakdown voltage of the original part. The IKB15N60TATMA1 operates at 600V, which is below the original specification.

Current Rating: The substitute must support the 21A continuous collector current requirement. The IKB15N60TATMA1 is rated for 30A continuous current, exceeding the original specification.

Package Compatibility: Both parts must use identical or mechanically compatible surface mount packages. The IRGS4715DPBF and IKB15N60TATMA1 both use TO-263-3 D2PAK packaging, ensuring PCB layout compatibility.

Thermal Performance: Operating temperature range must match or exceed the original -40°C to 175°C specification. Both parts support this range.

Input Configuration: Both parts feature standard input type configuration, ensuring gate drive circuit compatibility.

Critical Limitation: The IKB15N60TATMA1 voltage rating of 600V is below the 650V requirement of the IRGS4715DPBF. This represents a voltage derating that may not be acceptable in applications requiring the full 650V blocking capability.

Parameter Comparison

Parameter IRGS4715DPBF IKB15N60TATMA1 Unit
Manufacturer Infineon Technologies Infineon Technologies -
Category Transistors, IGBTs Transistors, IGBTs -
Voltage - Collector Emitter Breakdown (Max) 650 600 V
Current - Collector (Ic) (Max) 21 30 A
Current - Collector Pulsed (Icm) 24 45 A
Power - Max 100 130 W
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 8A 2.05V @ 15V, 15A V
Gate Charge 30 87 nC
Td (on/off) @ 25°C 30ns / 100ns 17ns / 188ns ns
Reverse Recovery Time (trr) 86 34 ns
Operating Temperature Range (TJ) -40 to 175 -40 to 175 °C
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK -
Mounting Type Surface Mount Surface Mount -
Input Type Standard Standard -
Product Status Obsolete Active -
REACH Status REACH Unaffected REACH Unaffected -
ECCN EAR99 EAR99 -

Engineering Selection Recommendations

Product Status Consideration: The IRGS4715DPBF is classified as obsolete, while the IKB15N60TATMA1 is active production. The active status of IKB15N60TATMA1 ensures long-term availability and supply chain stability.

Compliance and Certification: Both parts maintain REACH Unaffected status and EAR99 ECCN classification, indicating equivalent regulatory compliance. The IKB15N60TATMA1 carries ROHS3 compliance certification, providing additional environmental compliance assurance.

Voltage Rating Constraint: The 50V voltage rating difference (650V vs 600V) represents a material specification deviation. Selection of IKB15N60TATMA1 requires verification that the application circuit operates at or below 600V bus voltage. Applications designed for 650V operation cannot use this substitute without circuit redesign.

Current and Power Margin: The IKB15N60TATMA1 provides 43% higher continuous current rating (30A vs 21A) and 30% higher power dissipation capability (130W vs 100W), offering improved thermal margin in current-limited applications.

Switching Characteristics: The IKB15N60TATMA1 exhibits faster turn-on (17ns vs 30ns) and faster reverse recovery (34ns vs 86ns), resulting in reduced switching losses. Turn-off time increases (188ns vs 100ns), requiring gate drive circuit evaluation for compatibility.

Gate Charge Impact: The IKB15N60TATMA1 gate charge of 87nC is 190% higher than the original 30nC specification. Gate drive circuits must be verified for adequate current sourcing capability at the specified switching frequency.

Frequently Asked Questions (FAQ)

Q: Can IKB15N60TATMA1 directly replace IRGS4715DPBF in all applications?

A: No. The IKB15N60TATMA1 operates at 600V maximum, which is 50V below the IRGS4715DPBF specification of 650V. Direct substitution is only valid for applications with maximum bus voltage of 600V or lower. Applications requiring 650V blocking voltage cannot use this substitute.

Q: Are the D2PAK packages mechanically identical?

A: Yes. Both parts use TO-263-3 D2PAK packaging with identical lead configuration and PCB footprint. No layout modifications are required for package compatibility.

Q: What gate drive modifications are necessary?

A: The IKB15N60TATMA1 requires 87nC gate charge compared to 30nC for the original part. Gate drive circuits must provide sufficient current to charge this higher capacitance within the required switching time. Verify gate driver output impedance and switching frequency compatibility.

Q: Does the higher current rating affect thermal design?

A: The IKB15N60TATMA1 has higher power dissipation capability (130W vs 100W) and lower on-state voltage (2.05V vs 2V at comparable conditions), resulting in lower junction temperature rise. Thermal design margins improve with this substitute in current-limited applications.

Q: Are there switching frequency limitations?

A: The IKB15N60TATMA1 exhibits different switching characteristics: faster turn-on (17ns vs 30ns) and slower turn-off (188ns vs 100ns). Evaluate switching frequency compatibility with gate drive circuit rise/fall time capabilities and EMI performance requirements.

Q: What is the impact of lower reverse recovery time?

A: The IKB15N60TATMA1 reverse recovery time of 34ns is 60% lower than the original 86ns. This reduces reverse recovery losses and improves efficiency, particularly in hard-switched topologies. No negative impact on circuit operation is expected.

Q: Is supply chain availability a consideration?

A: Yes. The IRGS4715DPBF is obsolete with limited remaining inventory. The IKB15N60TATMA1 is in active production, ensuring long-term availability and stable pricing. New designs should specify the active part.

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