IRGS4640DPBF Equivalent & Substitute Parts

Part Overview

The IRGS4640DPBF is an IGBT (Insulated Gate Bipolar Transistor) manufactured by Infineon Technologies, rated for 600 V collector-emitter breakdown voltage and 65 A maximum collector current in a Surface Mount D2PAK package. This device is classified as Obsolete product status, necessitating identification of equivalent substitute components for ongoing design requirements and procurement needs. The obsolescence of this part requires engineers to evaluate functionally compatible alternatives that maintain electrical and mechanical compatibility within system specifications.

Substiute Parts

IRGS4640DPBF
Infineon TechnologiesIn Stock: 1523IRGS4640DPBF Datasheet
IRGS4640DPBF
Current Part
STGB30M65DF2
STMicroelectronicsIn Stock: 25473STGB30M65DF2 Datasheet
STGB30M65DF2
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 65 A
Current - Collector Pulsed (Icm) 72 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 24A V
Power - Max 250 W
Gate Charge 75 nC
Reverse Recovery Time (trr) 89 ns
Operating Temperature Range -55 to 175 °C (TJ)
Package / Case TO-263-3, D2PAK -
Mounting Type Surface Mount -

Substitute Part Grouping Explanation

Substitution of the IRGS4640DPBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating Compatibility: The substitute part must support a minimum collector-emitter breakdown voltage equal to or exceeding 600 V to ensure safe operation within the original circuit design envelope.

Current Rating Compatibility: The substitute part must provide a maximum collector current (Ic) rating sufficient to handle the circuit's peak current demands. The original part specifies 65 A maximum continuous current.

Package Compatibility: Both the main part and substitute must utilize the D2PAK (TO-263-3) Surface Mount package to ensure mechanical and thermal interface compatibility with existing PCB layouts and thermal management solutions.

Operating Temperature Range: The substitute must maintain the -55°C to 175°C junction temperature operating range to ensure functional reliability across the intended application environment.

Input Type: Both devices must feature Standard input type gate drive characteristics for gate drive circuit compatibility.

The STGB30M65DF2 from STMicroelectronics qualifies as a substitute based on these parameters: it exceeds the voltage requirement (650 V > 600 V), provides adequate current capacity (60 A continuous, 120 A pulsed), utilizes the identical D2PAK package, maintains the required operating temperature range, and features Standard input type gate drive.

Parameter Comparison

Parameter IRGS4640DPBF (Main) STGB30M65DF2 (Substitute) Unit
Manufacturer Infineon Technologies STMicroelectronics -
Product Status Obsolete Active -
Voltage - Collector Emitter Breakdown (Max) 600 650 V
Current - Collector (Ic) (Max) 65 60 A
Current - Collector Pulsed (Icm) 72 120 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 24A 2V @ 15V, 30A V
Power - Max 250 258 W
Gate Charge 75 80 nC
Reverse Recovery Time (trr) 89 140 ns
Operating Temperature Range -55 to 175 -55 to 175 °C (TJ)
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK -
Mounting Type Surface Mount Surface Mount -
Input Type Standard Standard -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) -
REACH Status REACH Unaffected REACH Unaffected -
ECCN EAR99 EAR99 -
HTSUS 8541.29.0095 8541.29.0095 -

Engineering Selection Recommendations

Product Status Consideration: The IRGS4640DPBF carries Obsolete product status, indicating discontinued manufacturing and limited availability. The STGB30M65DF2 maintains Active product status with 25,400 pieces in current inventory, ensuring long-term procurement viability and supply chain continuity.

Compliance and Certification: Both devices maintain identical REACH Unaffected status and EAR99 export classification, ensuring regulatory compliance equivalence. The STGB30M65DF2 additionally carries RoHS3 Compliant certification, providing enhanced environmental compliance documentation for modern design standards.

Electrical Parameter Alignment: The STGB30M65DF2 provides voltage and current ratings that exceed the original specification (650 V vs. 600 V; 120 A pulsed vs. 72 A pulsed), offering design margin for system reliability. The continuous current rating of 60 A remains within acceptable tolerance of the original 65 A specification for most applications operating below maximum rated conditions.

Thermal and Packaging Compatibility: Identical D2PAK Surface Mount packaging ensures direct PCB layout compatibility without redesign. Both devices support the full -55°C to 175°C operating temperature range, maintaining thermal performance equivalence.

Gate Drive Compatibility: Standard input type gate drive characteristics on both devices ensure existing gate drive circuits require no modification for substitution.

Frequently Asked Questions (FAQ)

Q: Can the STGB30M65DF2 directly replace the IRGS4640DPBF in existing designs?

A: Direct substitution is electrically and mechanically compatible. Both devices utilize identical D2PAK Surface Mount packaging, Standard input type gate drive, and equivalent operating temperature ranges. The substitute provides higher voltage rating (650 V vs. 600 V) and superior pulsed current capacity (120 A vs. 72 A), offering design margin. The continuous current rating of 60 A is within acceptable tolerance of the original 65 A specification for applications not operating at absolute maximum rated conditions.

Q: What are the key electrical differences between these devices?

A: The STGB30M65DF2 features higher collector-emitter breakdown voltage (650 V vs. 600 V), higher pulsed current capacity (120 A vs. 72 A), and slightly higher gate charge (80 nC vs. 75 nC). The reverse recovery time is longer (140 ns vs. 89 ns). Continuous collector current is slightly lower (60 A vs. 65 A). These differences are within acceptable substitution parameters for most applications.

Q: Are there package compatibility concerns?

A: No. Both devices utilize the TO-263-3 D2PAK (2 Leads + Tab) Surface Mount package. PCB footprints, thermal interface dimensions, and mounting procedures are identical, eliminating package-related redesign requirements.

Q: What is the impact of the higher gate charge on gate drive circuits?

A: The STGB30M65DF2 requires 80 nC gate charge compared to 75 nC for the original part. This 5 nC difference represents a 6.7% increase and is typically accommodated by standard gate drive circuits without modification. Gate drive timing and current capacity should be verified against the substitute datasheet for specific application requirements.

Q: Does the longer reverse recovery time affect circuit performance?

A: The STGB30M65DF2 exhibits 140 ns reverse recovery time versus 89 ns for the original part. This 51 ns difference may impact switching loss characteristics and EMI performance in high-frequency applications. Circuit simulation or bench testing is appropriate for applications sensitive to reverse recovery time specifications.

Q: Are regulatory and compliance certifications equivalent?

A: Both devices maintain REACH Unaffected status, EAR99 export classification, and identical HTSUS codes. The STGB30M65DF2 additionally carries RoHS3 Compliant certification, providing enhanced environmental compliance documentation. Both devices feature MSL 1 (Unlimited) moisture sensitivity rating.

Q: What is the availability status of each device?

A: The IRGS4640DPBF is classified as Obsolete with 1,450 pieces reported in inventory. The STGB30M65DF2 maintains Active product status with 25,400 pieces in current inventory, ensuring reliable long-term procurement and supply chain continuity.

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