IRGS4620DTRLPBF IGBT 600V 32A Equivalent & Substitute Parts

Part Overview

The IRGS4620DTRLPBF is a 600V, 32A IGBT manufactured by Infineon Technologies in D2PAK surface mount packaging. This device is classified as obsolete product status, necessitating identification of equivalent substitute components for ongoing design support and procurement continuity. The part operates across a junction temperature range of -40°C to 175°C and delivers maximum power dissipation of 140W, making it suitable for industrial switching applications requiring moderate current handling in high-voltage environments.

Substiute Parts

IRGS4620DTRLPBF
Infineon TechnologiesIn Stock: 799IRGS4620DTRLPBF Datasheet
IRGS4620DTRLPBF
Current Part
IKB20N60TATMA1
Infineon TechnologiesIn Stock: 3465IKB20N60TATMA1 Datasheet
IKB20N60TATMA1
MFR Recommended
STGB19NC60KDT4
STMicroelectronicsIn Stock: 25353STGB19NC60KDT4 Datasheet
STGB19NC60KDT4
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 32 A
Current - Collector Pulsed (Icm) 36 A
Power - Max 140 W
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 12A V
Gate Charge 25 nC
Switching Energy (on/off) 75µJ / 225µJ µJ
Td (on/off) @ 25°C 31ns / 83ns ns
Reverse Recovery Time (trr) 68 ns
Operating Temperature Range (TJ) -40 to 175 °C
Package / Case TO-263-3, D2PAK -
Mounting Type Surface Mount -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution eligibility for the IRGS4620DTRLPBF is determined by the following critical parameters:

Mandatory Matching Criteria:

  • Voltage rating: 600V collector-emitter breakdown voltage
  • Package type: TO-263-3 / D2PAK surface mount configuration
  • Mounting type: Surface mount
  • Input type: Standard gate drive

Performance Compatibility Criteria:

  • Current rating: Minimum 32A continuous collector current (Ic)
  • Power dissipation: Minimum 140W capability
  • Operating temperature range: Support for -40°C to 175°C junction temperature
  • Gate charge and switching characteristics: Must support standard 15V gate drive

The identified substitute parts meet these mandatory criteria while offering enhanced performance specifications in active product status, ensuring long-term design support and procurement availability.

Parameter Comparison

Parameter IRGS4620DTRLPBF IKB20N60TATMA1 STGB19NC60KDT4 Unit
Manufacturer Infineon Technologies Infineon Technologies STMicroelectronics -
Voltage - Collector Emitter Breakdown (Max) 600 600 600 V
Current - Collector (Ic) (Max) 32 40 35 A
Current - Collector Pulsed (Icm) 36 60 75 A
Power - Max 140 166 125 W
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 12A 2.05V @ 15V, 20A 2.75V @ 15V, 12A V
Gate Charge 25 120 55 nC
Td (on/off) @ 25°C 31ns / 83ns 18ns / 199ns 30ns / 105ns ns
Reverse Recovery Time (trr) 68 41 31 ns
Operating Temperature Range (TJ) -40 to 175 -40 to 175 -55 to 150 °C
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK TO-263-3, D2PAK -
Product Status Obsolete Active Active -
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant -
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected -

Engineering Selection Recommendations

IKB20N60TATMA1 (Infineon Technologies - TrenchStop® Series)

This substitute offers the highest current rating (40A) and power dissipation (166W) among available options. The device maintains identical voltage rating and package configuration. Active product status ensures long-term availability and technical support. ROHS3 compliance and REACH unaffected status satisfy regulatory requirements. The higher gate charge (120nC) requires gate driver capability assessment for switching frequency applications. Trench Field Stop technology provides improved switching characteristics with reduced reverse recovery time (41ns).

STGB19NC60KDT4 (STMicroelectronics - PowerMESH™ Series)

This substitute provides 35A continuous current and 125W power dissipation, closely matching the original specification envelope. Active product status and ROHS3 compliance ensure procurement continuity. Operating temperature range extends to -55°C minimum, exceeding the original -40°C specification. The higher Vce(on) (2.75V) and gate charge (55nC) require thermal and gate drive circuit evaluation. Faster reverse recovery time (31ns) supports higher switching frequency applications.

Both substitutes maintain identical 600V voltage rating, TO-263-3 D2PAK package configuration, and surface mount mounting type. Selection between substitutes depends on application-specific requirements for current headroom, power dissipation margin, switching frequency, and thermal management constraints.

Frequently Asked Questions (FAQ)

Q: Can IRGS4620DTRLPBF be directly replaced with IKB20N60TATMA1?

A: Direct replacement is possible from a package and voltage perspective. Both devices use TO-263-3 D2PAK surface mount packaging and 600V rating. However, the IKB20N60TATMA1 exhibits higher gate charge (120nC vs. 25nC), requiring verification that the gate driver circuit can supply the increased charge within acceptable switching times. The higher current rating (40A vs. 32A) and power dissipation (166W vs. 140W) provide design margin.

Q: What are the key differences between the two substitute options?

A: IKB20N60TATMA1 prioritizes current capacity (40A) and power handling (166W) with Trench Field Stop technology. STGB19NC60KDT4 offers moderate current increase (35A) with lower power rating (125W) and extended minimum operating temperature (-55°C). Gate charge differs significantly: IKB20N60TATMA1 requires 120nC while STGB19NC60KDT4 requires 55nC. Reverse recovery time is faster in STGB19NC60KDT4 (31ns vs. 41ns).

Q: Are package dimensions identical across all three devices?

A: All three devices use TO-263-3 D2PAK surface mount packaging with identical pinout configuration (2 leads plus tab). PCB layout and thermal management considerations remain consistent across substitution options.

Q: What compliance certifications apply to substitute parts?

A: Both IKB20N60TATMA1 and STGB19NC60KDT4 carry ROHS3 compliance and REACH unaffected status. These certifications satisfy current regulatory requirements for industrial and consumer applications in regulated markets.

Q: How do switching characteristics affect circuit performance?

A: The original IRGS4620DTRLPBF exhibits turn-on delay of 31ns and turn-off delay of 83ns. IKB20N60TATMA1 provides faster turn-on (18ns) but slower turn-off (199ns), while STGB19NC60KDT4 maintains comparable timing (30ns/105ns). Gate charge differences (25nC original vs. 120nC or 55nC substitutes) directly impact gate driver current requirements and switching frequency capability. Applications operating above 50kHz switching frequency require gate driver circuit reassessment.

Q: Can thermal management remain unchanged during substitution?

A: The original 140W power rating is exceeded by IKB20N60TATMA1 (166W) but not by STGB19NC60KDT4 (125W). Thermal design margins should be recalculated based on actual application current and switching frequency. Higher Vce(on) in STGB19NC60KDT4 (2.75V vs. 1.85V) increases conduction losses and thermal dissipation requirements.

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