IRGS4607DTRLPBF IGBT 600V 11A Equivalent & Substitute Parts

Part Overview

The IRGS4607DTRLPBF is a 600V, 11A IGBT manufactured by Infineon Technologies in D2PAK surface mount packaging. This device is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing design support, production continuity, and system maintenance. The part operates across an industrial temperature range of -40°C to 175°C and is suitable for switching applications requiring moderate power dissipation up to 58W.

Substiute Parts

IRGS4607DTRLPBF
Infineon TechnologiesIn Stock: 1075IRGS4607DTRLPBF Datasheet
IRGS4607DTRLPBF
Current Part
IKB06N60TATMA1
Infineon TechnologiesIn Stock: 1666IKB06N60TATMA1 Datasheet
IKB06N60TATMA1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 11 A
Current - Collector Pulsed (Icm) 12 A
Power - Max 58 W
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 4A V
Gate Charge 9 nC
Switching Energy (on/off) 140µJ / 62µJ µJ
Td (on/off) @ 25°C 27ns / 120ns ns
Reverse Recovery Time (trr) 48 ns
Operating Temperature Range -40 to 175 °C
Package / Case TO-263-3, D2PAK -
Mounting Type Surface Mount -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the IRGS4607DTRLPBF is determined by strict alignment of the following electrical and mechanical parameters:

Voltage Rating: The substitute must maintain a Collector-Emitter breakdown voltage of 600V to ensure compatibility with the original circuit design and voltage stress conditions.

Current Rating: The substitute must support a continuous collector current (Ic) of at least 11A. The IKB06N60TATMA1 provides 12A continuous current, meeting this requirement with minimal margin increase.

Package and Mounting: Both the original part and substitute must use TO-263-3 (D2PAK) surface mount packaging to ensure PCB footprint compatibility without redesign.

Temperature Range: The operating temperature range of -40°C to 175°C must be maintained to support the same thermal operating envelope.

Input Type: Both devices must feature Standard input type gate drive compatibility.

The IKB06N60TATMA1 satisfies all these criteria while offering enhanced performance characteristics through Trench Field Stop technology, higher pulsed current capability (18A vs. 12A), and increased power rating (88W vs. 58W).

Parameter Comparison

Parameter IRGS4607DTRLPBF IKB06N60TATMA1 Unit
Manufacturer Infineon Technologies Infineon Technologies -
Category Transistors, IGBTs Transistors, IGBTs -
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 11 12 A
Current - Collector Pulsed (Icm) 12 18 A
Power - Max 58 88 W
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 4A 2.05V @ 15V, 6A V
Gate Charge 9 42 nC
Td (on/off) @ 25°C 27ns / 120ns 9ns / 130ns ns
Reverse Recovery Time (trr) 48 123 ns
Operating Temperature Range -40 to 175 -40 to 175 °C
Package / Case TO-263-3, D2PAK TO-263-3, D2PAK -
Mounting Type Surface Mount Surface Mount -
Product Status Obsolete Active -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) -
REACH Status REACH Unaffected REACH Unaffected -
ECCN EAR99 EAR99 -
HTSUS 8541.29.0095 8541.29.0095 -

Engineering Selection Recommendations

The IKB06N60TATMA1 is the manufacturer-recommended substitute for the obsolete IRGS4607DTRLPBF. Both devices share identical voltage and package specifications, ensuring direct compatibility at the circuit board level.

Product Status Consideration: The IRGS4607DTRLPBF is classified as obsolete, while the IKB06N60TATMA1 maintains active production status. This distinction is critical for long-term supply chain reliability and design support continuity.

Compliance and Certification: Both parts carry identical regulatory classifications (REACH Unaffected, EAR99, HTSUS 8541.29.0095) and moisture sensitivity ratings (MSL 1 - Unlimited), ensuring equivalent environmental and export compliance profiles.

Performance Characteristics: The IKB06N60TATMA1 incorporates Trench Field Stop technology, delivering improved switching performance with reduced turn-on delay (9ns vs. 27ns) and enhanced current handling capability. The higher gate charge (42nC vs. 9nC) and increased reverse recovery time (123ns vs. 48ns) reflect the advanced device architecture and must be evaluated within the context of the specific gate drive circuit design.

Thermal and Power Handling: The substitute device supports 88W maximum power dissipation compared to 58W for the original part, providing additional thermal margin in applications operating near power limits.

Frequently Asked Questions (FAQ)

Q: Can the IKB06N60TATMA1 be used as a direct replacement for the IRGS4607DTRLPBF without PCB modifications?

A: Yes. Both devices use identical TO-263-3 (D2PAK) surface mount packaging with the same pinout and footprint. No PCB layout changes are required for mechanical compatibility.

Q: What are the key electrical differences between these two devices?

A: The primary differences are gate charge (9nC vs. 42nC), turn-on delay (27ns vs. 9ns), and reverse recovery time (48ns vs. 123ns). These parameters reflect different internal device architectures. The IKB06N60TATMA1 uses Trench Field Stop technology, which provides faster switching but requires higher gate charge. Circuit designers must verify that the gate drive circuit can supply the increased gate charge without exceeding maximum gate voltage or introducing excessive switching losses.

Q: Are there any thermal considerations when substituting these parts?

A: The IKB06N60TATMA1 has a higher maximum power rating (88W vs. 58W), indicating improved thermal performance. In applications where the original device operated near its 58W limit, the substitute provides additional thermal headroom. However, the higher gate charge may increase switching losses in some circuit topologies, requiring thermal analysis specific to the application.

Q: What is the significance of the different test conditions listed for Vce(on)?

A: The IRGS4607DTRLPBF is tested at 4A collector current, while the IKB06N60TATMA1 is tested at 6A. Both maintain the same 2.05V maximum Vce(on) at 15V gate voltage. This indicates that the substitute device maintains on-state voltage performance across a wider current range.

Q: Why is the gate charge significantly higher in the substitute device?

A: The IKB06N60TATMA1 uses Trench Field Stop technology, which provides improved switching speed and current handling at the cost of increased gate charge. This is a fundamental trade-off in IGBT design. The gate drive circuit must be capable of supplying 42nC of charge without exceeding the maximum gate voltage specification.

Q: Are both devices suitable for the same switching frequency applications?

A: The IKB06N60TATMA1 offers faster turn-on (9ns vs. 27ns), which may enable higher switching frequencies. However, the increased reverse recovery time (123ns vs. 48ns) must be considered in the overall circuit design. Application-specific analysis is required to determine if the switching frequency capability has changed.

Q: What is the inventory status for these parts?

A: The IRGS4607DTRLPBF has 965 pieces in stock (obsolete status). The IKB06N60TATMA1 has 1640 pieces in stock and maintains active production status, ensuring long-term availability for new designs and production continuity.

Q: Are there any compliance or regulatory differences between these devices?

A: No. Both devices carry identical REACH, ECCN, and HTSUS classifications, as well as the same MSL rating (1 - Unlimited). They are equivalent from a regulatory and environmental compliance perspective.

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