IRGR4610DPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGR4610DPBF is a 600V, 16A IGBT manufactured by Infineon Technologies in TO-252-3 (DPAK) surface mount packaging. This device is classified as obsolete, making identification of equivalent and substitute parts essential for design continuity and procurement planning. The IRGR4610DPBF operates across a junction temperature range of -40°C to 175°C and delivers 77W maximum power dissipation, suitable for general-purpose switching applications in industrial and consumer power conversion circuits.

Substiute Parts

IRGR4610DPBF
Infineon TechnologiesIn Stock: 1575IRGR4610DPBF Datasheet
IRGR4610DPBF
Current Part
IKD06N60RFATMA1
Infineon TechnologiesIn Stock: 55351IKD06N60RFATMA1 Datasheet
IKD06N60RFATMA1
MFR Recommended
STGD10HF60KD
STMicroelectronicsIn Stock: 2138STGD10HF60KD Datasheet
STGD10HF60KD
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 16 A
Current - Collector Pulsed (Icm) 18 A
Power - Max 77 W
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A V
Gate Charge 13 nC
Switching Energy (on/off) 56µJ / 122µJ µJ
Reverse Recovery Time (trr) 74 ns
Operating Temperature Range -40 to 175 °C (TJ)
Package / Case TO-252-3 (DPAK) -
Mounting Type Surface Mount -
Product Status Obsolete -

Substitute Part Grouping Explanation

Substitution of the IRGR4610DPBF is determined by strict alignment of the following electrical and mechanical parameters:

Critical Matching Parameters:

  • Voltage rating: 600V collector-emitter breakdown voltage
  • Package type: TO-252-3 (DPAK) surface mount configuration
  • Input type: Standard gate drive
  • Mounting: Surface mount technology
  • Temperature range compatibility: Operating within or exceeding -40°C to 175°C

Allowable Variation Parameters:

  • Collector current (Ic): Substitute parts may have Ic ratings of 10A to 18A, provided the application does not exceed the substitute's rated current
  • Power dissipation: Substitute parts may have power ratings between 62.5W and 100W
  • Switching characteristics (gate charge, switching energy, delay times): Variations permitted within the bounds of standard gate drive circuits
  • Vce(on): Variations up to 2.75V acceptable for applications with adequate thermal management

The two substitute parts listed below meet these criteria while maintaining functional equivalence in 600V switching applications.

Parameter Comparison

Parameter IRGR4610DPBF (Main) IKD06N60RFATMA1 (Substitute) STGD10HF60KD (Substitute)
Manufacturer Infineon Technologies Infineon Technologies STMicroelectronics
Voltage - Collector Emitter Breakdown (Max) 600 V 600 V 600 V
Current - Collector (Ic) (Max) 16 A 12 A 18 A
Current - Collector Pulsed (Icm) 18 A 18 A 30 A
Power - Max 77 W 100 W 62.5 W
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 6A 2.5V @ 15V, 6A 2.75V @ 15V, 5A
Gate Charge 13 nC 48 nC 23 nC
Switching Energy (on/off) 56µJ / 122µJ 90µJ / 90µJ 45µJ / 105µJ
Reverse Recovery Time (trr) 74 ns 48 ns 50 ns
Operating Temperature Range -40 to 175°C (TJ) -40 to 175°C (TJ) -55 to 150°C (TJ)
Package / Case TO-252-3 (DPAK) TO-252-3 (DPAK) TO-252-3 (DPAK)
Input Type Standard Standard Standard
Product Status Obsolete Active Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

IKD06N60RFATMA1 (Infineon Technologies TrenchStop®)

This substitute is an active product with ROHS3 compliance. The IKD06N60RFATMA1 features Trench Field Stop technology and operates within the same temperature range as the IRGR4610DPBF (-40°C to 175°C). The collector current rating of 12A is lower than the main part's 16A; therefore, this substitute is suitable only for applications where the continuous collector current does not exceed 12A. The higher power rating (100W vs. 77W) and improved reverse recovery time (48ns vs. 74ns) provide enhanced thermal margin and faster switching performance. Gate charge is elevated at 48nC, requiring gate drive circuits designed for higher charge delivery.

STGD10HF60KD (STMicroelectronics)

This substitute is an active product with ROHS3 compliance and AEC-Q101 automotive qualification. The STGD10HF60KD offers a collector current rating of 18A, exceeding the main part's 16A specification. The operating temperature range extends to -55°C minimum, providing broader low-temperature operation compared to the IRGR4610DPBF's -40°C minimum. The maximum operating temperature is limited to 150°C, which is 25°C lower than the main part. This substitute is suitable for applications operating within -55°C to 150°C. The lower power rating (62.5W vs. 77W) requires thermal design verification for high-dissipation applications. Gate charge of 23nC is moderate and compatible with standard gate drive circuits.

Both substitutes maintain the TO-252-3 (DPAK) package footprint and surface mount configuration, ensuring mechanical compatibility with existing PCB designs.

Frequently Asked Questions (FAQ)

Q1: Can the IKD06N60RFATMA1 directly replace the IRGR4610DPBF in all applications?

The IKD06N60RFATMA1 is mechanically and electrically compatible in applications where the continuous collector current does not exceed 12A. Applications requiring sustained currents above 12A must use the STGD10HF60KD or retain the original IRGR4610DPBF if available. Gate drive circuits must accommodate the higher gate charge of 48nC.

Q2: What are the thermal implications of substituting with the STGD10HF60KD?

The STGD10HF60KD has a lower maximum power rating (62.5W) compared to the IRGR4610DPBF (77W). Applications dissipating power near or above 62.5W require thermal analysis to confirm adequate heat dissipation through the DPAK package. The lower maximum junction temperature (150°C vs. 175°C) further constrains thermal headroom.

Q3: Are both substitutes compatible with the existing PCB layout?

Yes. Both the IKD06N60RFATMA1 and STGD10HF60KD use the TO-252-3 (DPAK) package with identical pin configuration and footprint. No PCB modifications are required for mechanical placement.

Q4: What is the impact of different gate charge values on gate drive design?

The IRGR4610DPBF has 13nC gate charge, the IKD06N60RFATMA1 has 48nC, and the STGD10HF60KD has 23nC. Higher gate charge requires the gate drive circuit to deliver more charge per switching cycle, potentially increasing switching losses and gate drive power consumption. Existing gate drive circuits designed for 13nC may require adjustment for the IKD06N60RFATMA1.

Q5: Which substitute is recommended for new designs?

Both substitutes are active products with ROHS3 compliance. The IKD06N60RFATMA1 offers superior switching performance (lower trr and balanced on/off switching energy) for applications within its 12A current rating. The STGD10HF60KD provides higher current capability (18A) and automotive qualification (AEC-Q101) for applications requiring extended temperature range to -55°C, with the trade-off of lower maximum power rating and temperature ceiling.

Q6: What is the significance of the Trench Field Stop technology in the IKD06N60RFATMA1?

Trench Field Stop technology reduces reverse recovery time and switching losses compared to standard IGBT designs. The IKD06N60RFATMA1 achieves 48ns reverse recovery time versus 74ns for the IRGR4610DPBF, enabling faster switching and reduced EMI in high-frequency applications.

Q7: Can the STGD10HF60KD operate at the full 175°C junction temperature of the IRGR4610DPBF?

No. The STGD10HF60KD is rated to a maximum junction temperature of 150°C. Applications requiring sustained operation above 150°C must use the IRGR4610DPBF or IKD06N60RFATMA1, both rated to 175°C.

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