IRGPS46160DPBF Equivalent & Substitute Parts

Part Overview

The IRGPS46160DPBF is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 240A and 750W power dissipation. This device features a SUPER-247™ (TO-274AA) through-hole package and employs standard input gate architecture. The part is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing system support and new design implementations.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	240	A
Current - Collector Pulsed (Icm)	360	A
Vce(on) (Max) @ 15V, 120A	2.05	V
Power - Max	750	W
Switching Energy (on/off)	5.75 / 3.43	mJ
Gate Charge	240	nC
Td (on/off) @ 25°C	80 / 190	ns
Reverse Recovery Time (trr)	130	ns
Operating Temperature Range	-55 to 175	°C (TJ)
Package / Case	TO-274AA	-
Mounting Type	Through Hole	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the IRGPS46160DPBF is determined by strict alignment of electrical and mechanical parameters within the IGBT 600V device category. The primary substitution criteria are:

Voltage Rating: Both main and substitute parts must maintain 600V collector-emitter breakdown voltage to ensure safe operation within the same circuit topology.

Current Rating: The substitute part must support the required collector current. The IKQ120N60TXKSA1 is rated for 160A continuous collector current, which is lower than the IRGPS46160DPBF (240A). This represents a current-limited substitution suitable only for applications requiring ≤160A continuous operation.

Package Compatibility: The IRGPS46160DPBF uses TO-274AA (SUPER-247™) through-hole packaging. The IKQ120N60TXKSA1 uses TO-247-3 (PG-TO247-3-46) through-hole packaging. Both are through-hole mounted devices with compatible pinout configurations for standard IGBT applications.

Input Type: Both devices employ standard gate input architecture, ensuring gate drive circuit compatibility.

Thermal Operating Range: The IRGPS46160DPBF operates from -55°C to 175°C. The IKQ120N60TXKSA1 operates from -40°C to 175°C. Applications requiring operation below -40°C cannot use the substitute part.

Compliance & Status: The IRGPS46160DPBF is obsolete; the IKQ120N60TXKSA1 is active production status. Both are ROHS3 compliant, REACH unaffected, and carry identical ECCN and HTSUS classifications.

Parameter Comparison

Parameter	IRGPS46160DPBF	IKQ120N60TXKSA1	Notes
Manufacturer	Infineon Technologies	Infineon Technologies	Same manufacturer
Voltage - Collector Emitter Breakdown (Max)	600 V	600 V	Matched
Current - Collector (Ic) (Max)	240 A	160 A	Substitute rated lower
Current - Collector Pulsed (Icm)	360 A	480 A	Substitute rated higher
Vce(on) (Max) @ 15V, 120A	2.05 V	2.0 V	Substitute slightly lower
Power - Max	750 W	833 W	Substitute rated higher
Switching Energy (on)	5.75 mJ	6.2 mJ	Substitute slightly higher
Switching Energy (off)	3.43 mJ	5.9 mJ	Substitute significantly higher
Gate Charge	240 nC	703 nC	Substitute significantly higher
Td (on) @ 25°C	80 ns	50 ns	Substitute faster
Td (off) @ 25°C	190 ns	565 ns	Substitute significantly slower
Reverse Recovery Time (trr)	130 ns	241 ns	Substitute significantly higher
Operating Temperature Range	-55 to 175 °C	-40 to 175 °C	Substitute limited at low temperature
Package / Case	TO-274AA	TO-247-3	Different package, compatible pinout
Product Status	Obsolete	Active	Substitute in active production
IGBT Type	Standard	Trench Field Stop	Different internal architecture
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	Matched

Engineering Selection Recommendations

Substitution Feasibility: The IKQ120N60TXKSA1 is a valid substitute for the IRGPS46160DPBF only in applications where the continuous collector current requirement does not exceed 160A. The 600V voltage rating is matched, ensuring safe operation within the same electrical stress envelope.

Product Status Consideration: The IRGPS46160DPBF is obsolete. The IKQ120N60TXKSA1 is in active production status with confirmed inventory availability (1392 pcs), providing long-term supply security and ongoing manufacturer support.

Compliance Alignment: Both devices maintain identical RoHS3 compliance, REACH unaffected status, and ECCN/HTSUS classifications, ensuring regulatory equivalence for procurement and deployment.

Thermal Operating Range: Applications requiring operation below -40°C junction temperature must retain the IRGPS46160DPBF or identify alternative parts with extended low-temperature ratings. The IKQ120N60TXKSA1 is not suitable for such applications.

Switching Characteristics: The IKQ120N60TXKSA1 exhibits faster turn-on (50ns vs. 80ns) but significantly slower turn-off (565ns vs. 190ns) and higher reverse recovery time (241ns vs. 130ns). Applications with stringent switching frequency or EMI requirements must evaluate these differences against circuit design margins.

Gate Drive Requirements: The IKQ120N60TXKSA1 requires substantially higher gate charge (703nC vs. 240nC), necessitating gate driver circuit verification to ensure adequate current sourcing capability.

Frequently Asked Questions (FAQ)

Q: Can the IKQ120N60TXKSA1 directly replace the IRGPS46160DPBF in all applications?

A: No. The IKQ120N60TXKSA1 is rated for 160A continuous collector current, compared to 240A for the IRGPS46160DPBF. Substitution is valid only for applications requiring ≤160A continuous operation. Additionally, the lower operating temperature limit (-40°C vs. -55°C) restricts use in extreme cold environments.

Q: What are the package differences between these two parts?

A: The IRGPS46160DPBF uses TO-274AA (SUPER-247™) packaging, while the IKQ120N60TXKSA1 uses TO-247-3 (PG-TO247-3-46) packaging. Both are through-hole mounted with compatible pinout configurations for standard IGBT gate drive circuits. PCB layout modifications may be required due to different package footprints.

Q: Why is the gate charge of the IKQ120N60TXKSA1 significantly higher?

A: The IKQ120N60TXKSA1 employs Trench Field Stop IGBT technology, which differs from the standard IGBT architecture of the IRGPS46160DPBF. This technology variation results in higher gate charge (703nC vs. 240nC). Gate driver circuits must be verified to supply adequate gate current for proper switching performance.

Q: How do switching characteristics differ between these parts?

A: The IKQ120N60TXKSA1 has faster turn-on delay (50ns vs. 80ns) but significantly slower turn-off delay (565ns vs. 190ns) and higher reverse recovery time (241ns vs. 130ns). These differences may impact switching frequency capability and EMI performance. Circuit simulation or testing is necessary to confirm compatibility with specific application requirements.

Q: Is the IKQ120N60TXKSA1 suitable for high-frequency switching applications?

A: The IKQ120N60TXKSA1's slower turn-off characteristics (565ns) and higher reverse recovery time (241ns) compared to the IRGPS46160DPBF (190ns and 130ns respectively) may limit its suitability for high-frequency applications. Applications operating above 10 kHz should evaluate switching loss implications.

Q: What is the minimum operating temperature for the IKQ120N60TXKSA1?

A: The IKQ120N60TXKSA1 is rated for junction temperatures from -40°C to 175°C. Applications requiring operation below -40°C cannot use this substitute and must retain the IRGPS46160DPBF or identify alternative parts with extended low-temperature specifications.

Q: Are both parts compliant with current environmental regulations?

A: Yes. Both the IRGPS46160DPBF and IKQ120N60TXKSA1 are ROHS3 compliant and REACH unaffected, meeting current environmental and hazardous substance restrictions for electronic components.

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