IRGP6690DPBF IGBT 600V 140A Equivalent & Substitute Parts

Part Overview

The IRGP6690DPBF is a 600V, 140A IGBT manufactured by Infineon Technologies in TO-247AC package configuration. This device is classified as obsolete product status. Due to its obsolete classification, equivalent substitute parts from active product lines are necessary for new designs, production continuity, and long-term supply chain reliability. Substitute IGBTs must maintain electrical compatibility within the 600V voltage class while accommodating variations in current ratings, power dissipation, and switching characteristics.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	140	A
Current - Collector Pulsed (Icm)	225	A
Power - Max	483	W
Vce(on) (Max) @ Vge, Ic	1.95V @ 15V, 75A	V
Gate Charge	140	nC
Switching Energy (on/off)	3.1 / 2.8	mJ
Td (on/off) @ 25°C	85 / 222	ns
Reverse Recovery Time (trr)	90	ns
Operating Temperature Range	-40 to 175	°C (TJ)
Package / Case	TO-247-3	-
Mounting Type	Through Hole	-

Substitute Part Grouping Explanation

Substitute IGBT selection for the IRGP6690DPBF is based on the following electrical and mechanical compatibility criteria:

Primary Substitution Criteria:

Voltage rating: 600V or higher (600V minimum, up to 650V acceptable)
Current rating: Minimum 80A (lower than original 140A acceptable for reduced-current applications; higher ratings provide design margin)
Package: TO-247-3 or equivalent through-hole configuration
Input type: Standard gate drive
Mounting: Through hole
Temperature range: -40°C to 175°C minimum

Substitute Parts Identified:

IKW75N60TFKSA1 (Infineon Technologies) - Trench Field Stop technology, 600V/80A, active product status
STGW80H65DFB (STMicroelectronics) - Trench Field Stop technology, 650V/120A, active product status
IXXH75N60B3D1 (IXYS) - PT technology, 600V/160A, active product status
IXXH75N60C3 (IXYS) - PT technology, 600V/150A, active product status
IXXR100N60B3H1 (IXYS) - PT technology, 600V/145A, active product status

All substitute parts meet the 600V voltage class requirement, maintain through-hole TO-247 package compatibility, and are classified as active products with current manufacturing availability.

Parameter Comparison

Parameter	IRGP6690DPBF	IKW75N60TFKSA1	STGW80H65DFB	IXXH75N60B3D1	IXXH75N60C3	IXXR100N60B3H1
Voltage - Collector Emitter Breakdown (Max)	600V	600V	650V	600V	600V	600V
Current - Collector (Ic) (Max)	140A	80A	120A	160A	150A	145A
Current - Collector Pulsed (Icm)	225A	225A	240A	300A	300A	440A
Power - Max	483W	428W	469W	750W	750W	400W
Vce(on) (Max)	1.95V @ 15V, 75A	2V @ 15V, 75A	2V @ 15V, 80A	1.85V @ 15V, 60A	2.3V @ 15V, 60A	1.8V @ 15V, 70A
Gate Charge	140nC	470nC	414nC	107nC	107nC	143nC
Switching Energy (on/off)	3.1 / 2.8 mJ	4.5 mJ	2.1 / 1.5 mJ	1.7 / 1.5 mJ	1.6 / 0.8 mJ	1.9 / 2.0 mJ
Td (on/off) @ 25°C	85 / 222 ns	33 / 330 ns	84 / 280 ns	35 / 118 ns	35 / 90 ns	30 / 120 ns
Reverse Recovery Time (trr)	90ns	121ns	85ns	25ns	-	140ns
Operating Temperature Range	-40 to 175°C	-40 to 175°C	-55 to 175°C	-	-	-
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Product Status	Obsolete	Active	Active	Active	Active	Active
RoHS Status	-	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Product Status Consideration: The IRGP6690DPBF is classified as obsolete. All identified substitute parts are active products with current manufacturing support, ensuring long-term availability and supply chain continuity.

Compliance and Certifications: All substitute parts carry ROHS3 compliance and REACH unaffected status, matching or exceeding the regulatory requirements applicable to the original part. All parts are classified under ECCN EAR99 and HTSUS 8541.29.0095.

Selection Based on Application Requirements:

IKW75N60TFKSA1: Select for applications requiring lower current (80A) with reduced gate charge (470nC) and extended switching times. Trench Field Stop technology provides cost-effective substitution.
STGW80H65DFB: Select for applications tolerating 650V rating with 120A current capability. Offers improved switching energy profile (2.1/1.5 mJ) and extended temperature range (-55°C to 175°C).
IXXH75N60B3D1: Select for applications requiring higher current capacity (160A) with superior switching performance (35/118 ns) and lower gate charge (107nC). PT technology provides enhanced efficiency.
IXXH75N60C3: Select for applications requiring 150A current with optimized turn-off switching time (90ns) and lowest off-state switching energy (0.8mJ).
IXXR100N60B3H1: Select for applications requiring 145A current with ISOPLUS247™ package variant and highest pulsed current capability (440A). Suitable for high-reliability applications.

Frequently Asked Questions (FAQ)

Q: Can IRGP6690DPBF be directly replaced with IKW75N60TFKSA1?

A: Direct replacement is not recommended. While both are 600V IGBTs in TO-247-3 package, the IKW75N60TFKSA1 has lower continuous current rating (80A vs. 140A). Use only if application current requirements do not exceed 80A continuous operation.

Q: What is the primary difference between Trench Field Stop and PT technology substitutes?

A: Trench Field Stop technology (IKW75N60TFKSA1, STGW80H65DFB) emphasizes cost optimization with higher gate charge. PT technology (IXXH75N60B3D1, IXXH75N60C3, IXXR100N60B3H1) prioritizes switching speed and efficiency with lower gate charge and switching energy.

Q: Are all substitute parts pin-compatible with IRGP6690DPBF?

A: All substitute parts use TO-247-3 package with identical pin configuration (Gate, Collector, Emitter). Physical mounting and electrical connections are compatible without PCB modification.

Q: Which substitute offers the closest electrical performance match?

A: IXXH75N60B3D1 and IXXH75N60C3 provide the closest performance match with current ratings (160A and 150A respectively) nearest to the original 140A specification and superior switching characteristics.

Q: Can STGW80H65DFB be used in 600V-rated circuits?

A: Yes. The 650V rating provides 50V overvoltage margin above 600V circuits. This is acceptable for applications with standard 600V bus voltage specifications.

Q: What is the impact of higher gate charge in IKW75N60TFKSA1?

A: Higher gate charge (470nC vs. 140nC) requires increased gate drive current and energy. Gate driver circuits must be verified for compatibility with higher charge requirements.

Q: Are operating temperature ranges equivalent across all substitutes?

A: STGW80H65DFB extends to -55°C minimum (vs. -40°C for original). IXYS PT devices do not specify operating temperature range in provided data. Verify temperature requirements for specific applications.

Q: Which substitute is recommended for new design qualification?

A: IXXH75N60B3D1 or IXXH75N60C3 are recommended for new designs due to active product status, superior switching performance, lower gate charge, and established design support from IXYS.

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