IRGP6650DPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP6650DPBF is a 600V, 80A IGBT manufactured by Infineon Technologies in TO-247AC package configuration. This device is classified as Obsolete product status, necessitating identification of equivalent substitute components for ongoing system support and new design considerations. The part delivers 306W maximum power dissipation with standard input type gate drive characteristics suitable for industrial switching applications.

Substiute Parts

IRGP6650DPBF
Infineon TechnologiesIn Stock: 1084IRGP6650DPBF Datasheet
IRGP6650DPBF
Current Part
IKW50N60DTPXKSA1
Infineon TechnologiesIn Stock: 1283IKW50N60DTPXKSA1 Datasheet
IKW50N60DTPXKSA1
MFR Recommended
STGW60H65DFB
STMicroelectronicsIn Stock: 27185STGW60H65DFB Datasheet
STGW60H65DFB
Direct

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 80 A
Current - Collector Pulsed (Icm) 105 A
Power - Max 306 W
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 35A V
Gate Charge 75 nC
Switching Energy (on/off) 300µJ / 630µJ µJ
Td (on/off) @ 25°C 40ns / 105ns ns
Operating Temperature Range -40 to 175 °C (TJ)
Package / Case TO-247-3 -
Mounting Type Through Hole -

Substitute Part Grouping Explanation

Substitution eligibility for the IRGP6650DPBF is determined by the following critical parameters:

Primary Matching Criteria:

  • Voltage - Collector Emitter Breakdown: 600V minimum (600V or 650V acceptable)
  • Current - Collector (Ic): 80A nominal rating
  • Package / Case: TO-247-3 configuration
  • Mounting Type: Through Hole
  • Input Type: Standard gate drive

Secondary Compatibility Factors:

  • Operating Temperature Range: -40°C to 175°C minimum
  • Power dissipation capability: 306W or greater
  • REACH and RoHS compliance status

The identified substitute parts maintain electrical compatibility within the specified voltage and current ratings while accommodating minor variations in switching characteristics and gate charge that are acceptable within standard application margins.

Parameter Comparison

Parameter IRGP6650DPBF IKW50N60DTPXKSA1 STGW60H65DFB Unit
Manufacturer Infineon Technologies Infineon Technologies STMicroelectronics -
Voltage - Collector Emitter Breakdown (Max) 600 600 650 V
Current - Collector (Ic) (Max) 80 80 80 A
Current - Collector Pulsed (Icm) 105 150 240 A
Power - Max 306 319.2 375 W
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 35A 1.8V @ 15V, 50A 2V @ 15V, 60A V
Gate Charge 75 249 306 nC
Switching Energy (on) / (off) 300µJ / 630µJ 1.53mJ / 850µJ 1.09mJ / 626µJ µJ
Td (on/off) @ 25°C 40ns / 105ns 20ns / 215ns 51ns / 160ns ns
Operating Temperature Range -40 to 175 -40 to 175 -55 to 175 °C (TJ)
Package / Case TO-247-3 TO-247-3 TO-247-3 -
Mounting Type Through Hole Through Hole Through Hole -
Product Status Obsolete Not For New Designs Active -
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant -

Engineering Selection Recommendations

IKW50N60DTPXKSA1 (Infineon Technologies - MFR Recommended)

This substitute maintains exact voltage and current specifications with the IRGP6650DPBF. The IKW50N60DTPXKSA1 features Trench Field Stop technology, delivering improved power dissipation (319.2W vs. 306W). Product status is Not For New Designs, indicating limited long-term availability. ROHS3 compliance is confirmed. Selection of this part is appropriate for legacy system maintenance where component continuity is prioritized.

STGW60H65DFB (STMicroelectronics - Direct Manufacturer Alternative)

This substitute provides 650V voltage rating (50V margin above IRGP6650DPBF specification) with identical 80A collector current. The STGW60H65DFB is Active product status, ensuring sustained availability and manufacturing support. Power dissipation capability is enhanced to 375W. ROHS3 compliance and extended operating temperature range (-55°C to 175°C) are confirmed. This part is suitable for new designs and ongoing production requiring long-term component supply assurance.

Frequently Asked Questions (FAQ)

Q: Can STGW60H65DFB replace IRGP6650DPBF in existing designs?

A: Yes. The STGW60H65DFB maintains the required 80A collector current and TO-247-3 package. The 650V voltage rating provides 50V margin above the 600V specification. Gate charge and switching energy characteristics differ; thermal management and gate drive circuit validation are required.

Q: What is the primary difference between IKW50N60DTPXKSA1 and STGW60H65DFB?

A: IKW50N60DTPXKSA1 matches 600V specification exactly but carries Not For New Designs status. STGW60H65DFB is Active product with 650V rating and superior long-term availability. Both maintain 80A current rating and TO-247-3 package compatibility.

Q: Are all three parts pin-compatible?

A: Yes. IRGP6650DPBF, IKW50N60DTPXKSA1, and STGW60H65DFB all use TO-247-3 package with identical pin configuration for Through Hole mounting.

Q: What compliance certifications apply to substitute parts?

A: IKW50N60DTPXKSA1 and STGW60H65DFB are both ROHS3 compliant and REACH unaffected. ECCN classification is EAR99 for all parts.

Q: How do switching characteristics differ between substitutes?

A: IRGP6650DPBF exhibits lower gate charge (75nC) and faster switching times (40ns on, 105ns off). IKW50N60DTPXKSA1 and STGW60H65DFB feature higher gate charge (249nC and 306nC respectively) and increased switching energy. Gate drive circuit adjustment may be necessary.

Q: Which substitute is recommended for new designs?

A: STGW60H65DFB is recommended for new designs due to Active product status, ensuring sustained manufacturing support and component availability.

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