IRGP6640D-EPBF Equivalent & Substitute Parts

Part Overview

The IRGP6640D-EPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, rated for 600V collector-emitter breakdown voltage with a maximum collector current of 53A and 200W power dissipation. This device features a Through Hole TO-247-3 package configuration and operates across a temperature range of -40°C to 175°C.

The IRGP6640D-EPBF is classified as an Obsolete product. Identification of equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this IGBT topology.

Substiute Parts

IRGP6640D-EPBF
Infineon TechnologiesIn Stock: 947IRGP6640D-EPBF Datasheet
IRGP6640D-EPBF
Current Part
IKW40N60H3FKSA1
Infineon TechnologiesIn Stock: 3490IKW40N60H3FKSA1 Datasheet
IKW40N60H3FKSA1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 53 A
Current - Collector Pulsed (Icm) 72 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 24A V
Power - Max 200 W
Gate Charge 50 nC
Td (on/off) @ 25°C 40ns/100ns ns
Reverse Recovery Time (trr) 70 ns
Operating Temperature Range -40 to 175 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-247-3 -
Moisture Sensitivity Level (MSL) 1 (Unlimited) -

Substitute Part Grouping Explanation

Substitution of the IRGP6640D-EPBF is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating: The substitute part must maintain the 600V collector-emitter breakdown voltage specification to ensure safe operation within the same circuit topology and voltage stress conditions.

Current Rating: The substitute part must support the required collector current. The IRGP6640D-EPBF specifies a maximum collector current of 53A; substitute parts with equal or higher current ratings (80A or greater) provide enhanced thermal margin and operational headroom.

Package Configuration: Both the main part and substitute must utilize the TO-247-3 Through Hole package to ensure mechanical compatibility with existing printed circuit board layouts and thermal management infrastructure.

Operating Temperature Range: The substitute part must support the full operating temperature range of -40°C to 175°C (TJ) to maintain performance consistency across all environmental conditions.

Input Type: Both parts must feature Standard input type gate drive characteristics for compatibility with existing gate drive circuitry.

The IKW40N60H3FKSA1 meets all substitution criteria while offering enhanced performance characteristics through Trench Field Stop technology and higher current capacity.

Parameter Comparison

Parameter IRGP6640D-EPBF (Main Part) IKW40N60H3FKSA1 (Substitute) Unit
Manufacturer Infineon Technologies Infineon Technologies -
Category Transistors, IGBTs Transistors, IGBTs -
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 53 80 A
Current - Collector Pulsed (Icm) 72 160 A
Power - Max 200 306 W
Input Type Standard Standard -
Operating Temperature Range -40 to 175 -40 to 175 °C (TJ)
Mounting Type Through Hole Through Hole -
Package / Case TO-247-3 TO-247-3 -
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited) -
REACH Status REACH Unaffected REACH Unaffected -
ECCN EAR99 EAR99 -
HTSUS 8541.29.0095 8541.29.0095 -
Product Status Obsolete Active -

Engineering Selection Recommendations

The IKW40N60H3FKSA1 is the qualified substitute for the IRGP6640D-EPBF based on the following engineering criteria:

Product Status Alignment: The IRGP6640D-EPBF is classified as Obsolete, while the IKW40N60H3FKSA1 maintains Active product status. This transition ensures long-term supply chain continuity and access to manufacturing support.

Electrical Compatibility: Both devices share identical 600V voltage ratings and Standard input type gate drive characteristics. The IKW40N60H3FKSA1 provides higher current capacity (80A versus 53A) and increased power dissipation capability (306W versus 200W), enabling operation with enhanced thermal margin in existing circuit topologies.

Mechanical Compatibility: Both parts utilize the TO-247-3 Through Hole package, ensuring direct mechanical compatibility with existing printed circuit board layouts without modification to mounting infrastructure or thermal management systems.

Regulatory and Compliance Status: Both devices maintain identical REACH Unaffected status, EAR99 export classification, and HTSUS commodity code designation. The IKW40N60H3FKSA1 carries RoHS3 Compliance certification, meeting current regulatory requirements for new component procurement.

Temperature Operating Range: Both devices support the full -40°C to 175°C (TJ) operating temperature range, ensuring consistent performance across all environmental conditions.

Frequently Asked Questions (FAQ)

Q: Can the IKW40N60H3FKSA1 directly replace the IRGP6640D-EPBF in existing circuit designs?

A: Yes. Both devices share identical 600V voltage ratings, Standard input type gate drive characteristics, TO-247-3 package configuration, and -40°C to 175°C operating temperature range. The IKW40N60H3FKSA1 provides higher current capacity (80A versus 53A) and power dissipation (306W versus 200W), making it suitable for direct substitution in applications designed for the IRGP6640D-EPBF.

Q: What are the key differences between the IRGP6640D-EPBF and IKW40N60H3FKSA1?

A: The primary differences are: (1) Product Status—IRGP6640D-EPBF is Obsolete while IKW40N60H3FKSA1 is Active; (2) IGBT Technology—IKW40N60H3FKSA1 utilizes Trench Field Stop technology; (3) Current Rating—IKW40N60H3FKSA1 supports 80A maximum collector current versus 53A; (4) Power Dissipation—IKW40N60H3FKSA1 rated for 306W versus 200W; (5) Regulatory Compliance—IKW40N60H3FKSA1 carries RoHS3 Compliance certification.

Q: Are there any package or mounting differences between these devices?

A: No. Both devices utilize the TO-247-3 Through Hole package configuration. Printed circuit board layouts, mounting hardware, and thermal management infrastructure designed for the IRGP6640D-EPBF require no modification to accommodate the IKW40N60H3FKSA1.

Q: Does the IKW40N60H3FKSA1 require different gate drive circuitry?

A: No. Both devices feature Standard input type gate drive characteristics. Existing gate drive circuits designed for the IRGP6640D-EPBF are compatible with the IKW40N60H3FKSA1 without modification.

Q: What is the significance of the Trench Field Stop technology in the IKW40N60H3FKSA1?

A: Trench Field Stop technology is an advanced IGBT design that improves switching performance and reduces switching losses compared to conventional IGBT architectures. This technology contributes to the IKW40N60H3FKSA1's higher power dissipation capability and enhanced thermal performance.

Q: Are both devices subject to the same regulatory and export restrictions?

A: Yes. Both devices maintain identical REACH Unaffected status, EAR99 export classification, and HTSUS commodity code (8541.29.0095). The IKW40N60H3FKSA1 additionally carries RoHS3 Compliance certification, meeting current regulatory requirements for component procurement in regulated markets.

Q: What is the moisture sensitivity level for both devices?

A: Both devices carry Moisture Sensitivity Level (MSL) 1 (Unlimited), indicating no moisture sensitivity restrictions during storage, handling, or assembly processes.

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