IRGP6630DPBF Equivalent & Substitute Parts

Part Overview

The IRGP6630DPBF is an IGBT (Insulated Gate Bipolar Transistor) rated for 600V collector-emitter breakdown voltage with a maximum collector current of 47A and 192W power dissipation. This device is packaged in TO-247-3 through-hole configuration and is manufactured by Infineon Technologies. The product status is obsolete, necessitating identification of functionally equivalent alternatives for ongoing design support and procurement requirements.

Substiute Parts

IRGP6630DPBF
Infineon TechnologiesIn Stock: 1412IRGP6630DPBF Datasheet
IRGP6630DPBF
Current Part
IKW30N60H3FKSA1
Infineon TechnologiesIn Stock: 1485IKW30N60H3FKSA1 Datasheet
IKW30N60H3FKSA1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 47 A
Current - Collector Pulsed (Icm) 54 A
Power - Max 192 W
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A V
Gate Charge 30 nC
Switching Energy (on/off) 75µJ / 350µJ µJ
Td (on/off) @ 25°C 40ns / 95ns ns
Reverse Recovery Time (trr) 70 ns
Operating Temperature Range -40 to 175 °C (TJ)
Package / Case TO-247-3
Mounting Type Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited)

Substitute Part Grouping Explanation

Substitution of the IRGP6630DPBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must maintain the 600V collector-emitter breakdown voltage specification to ensure safe operation within the same circuit topology.

Current Rating: The substitute must support a minimum collector current (Ic) rating equal to or exceeding the 47A maximum specification of the original part.

Package Configuration: The substitute must use the TO-247-3 through-hole package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting arrangements.

Operating Temperature Range: The substitute must support the -40°C to 175°C junction temperature range to maintain performance across the intended application environment.

Switching Characteristics: Gate charge, switching delay times (Td on/off), and reverse recovery time (trr) are secondary parameters that influence circuit performance but do not preclude substitution when primary electrical and mechanical requirements are met.

The IKW30N60H3FKSA1 meets these substitution criteria through equivalent voltage rating (600V), higher current capability (60A), identical package type (TO-247-3), and matching temperature range (-40°C to 175°C).

Parameter Comparison

Parameter IRGP6630DPBF IKW30N60H3FKSA1 Unit
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors, IGBTs Transistors, IGBTs
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 47 60 A
Current - Collector Pulsed (Icm) 54 120 A
Power - Max 192 187 W
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 18A 2.4V @ 15V, 30A V
Gate Charge 30 165 nC
Td (on/off) @ 25°C 40ns / 95ns 21ns / 207ns ns
Reverse Recovery Time (trr) 70 38 ns
Operating Temperature Range -40 to 175 -40 to 175 °C (TJ)
Package / Case TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole
Moisture Sensitivity Level (MSL) 1 (Unlimited) 1 (Unlimited)
Product Status Obsolete Active

Engineering Selection Recommendations

Product Status Consideration: The IRGP6630DPBF is classified as obsolete, which restricts long-term availability and future procurement. The IKW30N60H3FKSA1 maintains active product status with Infineon Technologies, ensuring continued supply chain access and technical support.

Compliance and Certification: Both parts share identical REACH status (REACH Unaffected), ECCN classification (EAR99), and HTSUS code (8541.29.0095). The IKW30N60H3FKSA1 carries RoHS3 compliance certification, providing additional environmental regulatory alignment for new designs.

Electrical Compatibility: The IKW30N60H3FKSA1 provides higher current capability (60A versus 47A) and improved pulsed current rating (120A versus 54A) within the same 600V voltage class. This represents a performance upgrade suitable for applications requiring the original IRGP6630DPBF specification.

Thermal and Mechanical Compatibility: Identical TO-247-3 package configuration and -40°C to 175°C operating temperature range ensure direct mechanical substitution without PCB layout or heatsink redesign.

Switching Performance Trade-offs: The IKW30N60H3FKSA1 exhibits higher gate charge (165nC versus 30nC) and increased turn-off delay (207ns versus 95ns), which may require gate driver circuit evaluation in high-frequency switching applications. Conversely, improved reverse recovery time (38ns versus 70ns) reduces switching losses in certain topologies.

Frequently Asked Questions (FAQ)

Q: Can the IKW30N60H3FKSA1 directly replace the IRGP6630DPBF without circuit modification?

A: Direct mechanical and electrical substitution is supported for applications operating within the 47A collector current specification. The higher current rating of the IKW30N60H3FKSA1 (60A) provides design margin. However, gate driver circuits must accommodate the increased gate charge (165nC versus 30nC) to maintain switching performance. Thermal design should be re-evaluated due to different Vce(on) characteristics at equivalent test conditions.

Q: What are the key differences in switching characteristics between these parts?

A: The IRGP6630DPBF exhibits faster turn-on (40ns versus 21ns) and turn-off (95ns versus 207ns) delay times. The IKW30N60H3FKSA1 features significantly lower reverse recovery time (38ns versus 70ns). Gate charge differs substantially (30nC versus 165nC). These differences affect switching frequency capability and gate driver design requirements.

Q: Are both parts suitable for the same package footprint?

A: Yes. Both devices use the TO-247-3 through-hole package configuration. PCB layout and heatsink mounting interfaces are mechanically identical. No physical redesign is required for package substitution.

Q: What is the significance of the Trench Field Stop technology in the IKW30N60H3FKSA1?

A: Trench Field Stop is an advanced IGBT architecture that improves switching performance and reduces reverse recovery time. This technology is reflected in the IKW30N60H3FKSA1 specifications (38ns trr versus 70ns in the IRGP6630DPBF). This represents a generational improvement in the Infineon IGBT product line.

Q: How does the higher gate charge of the IKW30N60H3FKSA1 affect circuit design?

A: Higher gate charge (165nC versus 30nC) requires increased gate driver current capability to achieve equivalent switching speeds. Gate driver circuits must supply sufficient current to charge the gate capacitance within the required switching time window. This may necessitate gate driver IC selection review or modification of gate resistor values.

Q: Is the IKW30N60H3FKSA1 available in the same packaging format as the IRGP6630DPBF?

A: Both parts use TO-247-3 through-hole packages. The IRGP6630DPBF supplier device package is listed as TO-247AC, while the IKW30N60H3FKSA1 uses PG-TO247-3-1 designation. These represent equivalent mechanical and thermal interfaces suitable for direct substitution.

Q: What compliance certifications apply to the IKW30N60H3FKSA1?

A: The IKW30N60H3FKSA1 is RoHS3 compliant and maintains REACH Unaffected status. Both parts share identical ECCN (EAR99) and HTSUS (8541.29.0095) classifications, ensuring regulatory consistency for procurement and export documentation.

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