IRGP4790DPBF Equivalent & Substitute Parts

Part Overview

The IRGP4790DPBF is an IGBT (Insulated Gate Bipolar Transistor) rated for 650V collector-emitter breakdown voltage with a maximum collector current of 140A and 455W power dissipation. This device is packaged in TO-247-3 through-hole configuration and is manufactured by Infineon Technologies. The part is currently listed as obsolete, necessitating identification of functionally equivalent alternatives for ongoing system support and new designs requiring similar electrical characteristics.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	650	V
Current - Collector (Ic) (Max)	140	A
Current - Collector Pulsed (Icm)	225	A
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 75A	V
Power - Max	455	W
Switching Energy (on)	2.5	mJ
Switching Energy (off)	2.2	mJ
Gate Charge	210	nC
Td (on/off) @ 25°C	50/200	ns
Reverse Recovery Time (trr)	170	ns
Operating Temperature Range	-40 to 175	°C (TJ)
Package / Case	TO-247-3	—
Mounting Type	Through Hole	—

Substitute Part Grouping Explanation

Substitution of the IRGP4790DPBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute must support the same or higher collector-emitter breakdown voltage to ensure safe operation in the original application circuit.

Current Rating: The substitute must support the required maximum collector current and pulsed collector current specifications.

Switching Characteristics: Gate charge, switching delay times (Td on/off), and reverse recovery time must be compatible with the gate driver and circuit timing requirements.

Thermal Performance: Maximum power dissipation and operating temperature range must meet or exceed application requirements.

Package Compatibility: The substitute must use the same TO-247-3 through-hole package to ensure mechanical and thermal interface compatibility with existing PCB layouts and heatsinks.

Input Type: Standard input type must be maintained for gate driver compatibility.

The IKW75N60TFKSA1 qualifies as a substitute based on these parameters, with specific trade-offs noted in the comparison table below.

Parameter Comparison

Parameter	IRGP4790DPBF	IKW75N60TFKSA1	Notes
Voltage - Collector Emitter Breakdown (Max)	650 V	600 V	Substitute rated 50V lower; acceptable for applications not requiring full 650V margin
Current - Collector (Ic) (Max)	140 A	80 A	Substitute rated 60A lower; suitable for lower current applications only
Current - Collector Pulsed (Icm)	225 A	225 A	Pulsed current rating identical
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 75A	2V @ 15V, 75A	On-state voltage identical at test condition
Power - Max	455 W	428 W	Substitute rated 27W lower due to reduced current rating
Switching Energy (on)	2.5 mJ	4.5 mJ	Substitute has higher switching energy; may increase switching losses
Switching Energy (off)	2.2 mJ	Not specified	Substitute total switching energy 4.5 mJ
Gate Charge	210 nC	470 nC	Substitute requires higher gate charge; verify gate driver capability
Td (on/off) @ 25°C	50/200 ns	33/330 ns	Substitute has faster turn-on but slower turn-off; different switching profile
Reverse Recovery Time (trr)	170 ns	121 ns	Substitute has faster recovery; reduces reverse recovery losses
Operating Temperature Range	-40 to 175 °C (TJ)	-40 to 175 °C (TJ)	Operating temperature range identical
Package / Case	TO-247-3	TO-247-3	Package identical; mechanical compatibility confirmed
IGBT Type	Standard	Trench Field Stop	Substitute uses advanced Trench Field Stop technology
Product Status	Obsolete	Active	Substitute is in active production with ongoing availability

Engineering Selection Recommendations

Availability and Product Status: The IRGP4790DPBF is obsolete with no ongoing manufacturing. The IKW75N60TFKSA1 is an active product with confirmed inventory of 4900 units, ensuring long-term supply chain continuity.

Compliance and Certifications: Both parts carry identical REACH compliance status (REACH Unaffected) and ECCN classification (EAR99). The IKW75N60TFKSA1 is RoHS3 compliant, meeting current regulatory requirements for new designs.

Application Suitability: The IKW75N60TFKSA1 is suitable as a substitute only for applications where the collector current requirement does not exceed 80A and the voltage stress remains below 600V. Applications requiring the full 140A current rating or 650V voltage margin of the original part cannot use this substitute.

Thermal Considerations: The substitute's maximum power rating of 428W is lower than the original 455W. Thermal design must account for this reduced margin in high-power applications.

Gate Driver Compatibility: The substitute requires verification that the gate driver can supply the higher gate charge of 470nC compared to the original 210nC. The different switching delay profile (33ns turn-on vs. 50ns, 330ns turn-off vs. 200ns) must be evaluated for circuit timing compatibility.

Frequently Asked Questions (FAQ)

Q: Can the IKW75N60TFKSA1 directly replace the IRGP4790DPBF in all applications?

A: No. The substitute has lower voltage (600V vs. 650V) and current (80A vs. 140A) ratings. Direct replacement is only valid for applications operating below these reduced limits.

Q: What is the primary reason for substitution?

A: The IRGP4790DPBF is obsolete. The IKW75N60TFKSA1 is an active product with confirmed availability, making it suitable for new designs and ongoing system support where electrical specifications align.

Q: Are the packages mechanically compatible?

A: Yes. Both parts use the TO-247-3 through-hole package, ensuring identical PCB footprint and heatsink interface compatibility.

Q: How do the switching characteristics differ?

A: The substitute has faster turn-on (33ns vs. 50ns) and faster reverse recovery (121ns vs. 170ns), but slower turn-off (330ns vs. 200ns) and higher switching energy (4.5mJ vs. 2.5mJ on-state). Gate driver capability must be verified for the higher gate charge requirement (470nC vs. 210nC).

Q: What is the difference between standard IGBT and Trench Field Stop technology?

A: The substitute uses Trench Field Stop technology, an advanced IGBT design that typically offers improved switching performance and reduced reverse recovery losses compared to standard IGBT designs.

Q: Is the substitute suitable for high-current applications above 80A?

A: No. The substitute's maximum collector current is 80A. Applications requiring 140A operation must use an alternative part with equivalent current rating.

Q: Are there any compliance differences between the two parts?

A: Both parts are REACH compliant and carry the same ECCN classification. The substitute is RoHS3 compliant, meeting current environmental regulations for new product designs.

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