IRGP4790D-EPBF Equivalent & Substitute Parts

Part Overview

The IRGP4790D-EPBF is an Infineon Technologies IGBT rated for 650V collector-emitter breakdown voltage with a maximum collector current of 140A and 455W power dissipation. This device is packaged in a TO-247-3 through-hole configuration and operates across a temperature range of -40°C to 175°C junction temperature.

The IRGP4790D-EPBF carries an Obsolete product status. Locating equivalent or substitute components becomes necessary when original inventory is depleted or when design flexibility permits the use of active alternatives that meet application requirements.

Substiute Parts

IRGP4790D-EPBF

Infineon TechnologiesIn Stock: 873IRGP4790D-EPBF Datasheet

Current PartRFQ

IKW75N60TFKSA1

Infineon TechnologiesIn Stock: 4913IKW75N60TFKSA1 Datasheet

MFR RecommendedRFQ

Key Parameters

Substitute Part Grouping Explanation

Substitution of the IRGP4790D-EPBF is determined by the following critical electrical and mechanical parameters:

Voltage Rating: The substitute part must support the application voltage requirements. The IRGP4790D-EPBF operates at 650V maximum collector-emitter breakdown voltage.

Current Rating: The substitute part must accommodate the maximum collector current demand. The IRGP4790D-EPBF is rated for 140A continuous collector current.

Package Compatibility: The substitute part must use the same through-hole TO-247-3 package to ensure mechanical and thermal compatibility with existing PCB layouts and heatsink mounting configurations.

Thermal Performance: Operating temperature range and power dissipation capability must align with application requirements. The IRGP4790D-EPBF operates from -40°C to 175°C junction temperature with 455W maximum power rating.

Switching Characteristics: Gate charge, switching delay times, and reverse recovery time influence circuit performance and must be compatible with gate driver specifications.

The IKW75N60TFKSA1 is identified as a substitute based on shared package type (TO-247-3), compatible operating temperature range (-40°C to 175°C), and matching gate input type (Standard). However, this substitute exhibits reduced current rating (80A versus 140A) and lower voltage rating (600V versus 650V), requiring application-level verification of suitability.

Parameter Comparison

Engineering Selection Recommendations

The IRGP4790D-EPBF is classified as Obsolete, making the IKW75N60TFKSA1 a viable alternative from an availability and product lifecycle perspective. The IKW75N60TFKSA1 carries Active product status and maintains equivalent compliance certifications (REACH Unaffected, EAR99 classification, HTSUS 8541.29.0095).

Both devices share identical operating temperature ranges (-40°C to 175°C junction temperature), matching moisture sensitivity levels (MSL 1 - Unlimited), and identical regulatory classifications. Both employ Standard input type gate configurations and are housed in TO-247-3 through-hole packages suitable for direct PCB mounting.

The IKW75N60TFKSA1 incorporates Trench Field Stop technology, which differs from the standard IGBT architecture of the IRGP4790D-EPBF. This technology variation results in measurable differences in switching characteristics: the substitute exhibits lower gate charge (470nC versus 210nC), faster turn-on delay (33ns versus 50ns), but slower turn-off delay (330ns versus 200ns).

Current and voltage ratings differ between the devices. The IRGP4790D-EPBF supports 140A continuous current at 650V, while the IKW75N60TFKSA1 is rated for 80A continuous current at 600V. Applications requiring the full 140A current capacity or 650V voltage margin cannot use the IKW75N60TFKSA1 as a direct substitute.

Selection of the IKW75N60TFKSA1 is appropriate for applications where the 80A current rating and 600V voltage rating satisfy design requirements, and where the switching characteristic differences are compatible with existing gate driver and circuit topology specifications.

Frequently Asked Questions (FAQ)

Q: Can the IKW75N60TFKSA1 directly replace the IRGP4790D-EPBF in all applications?

A: No. The IKW75N60TFKSA1 has a lower continuous current rating (80A versus 140A) and lower voltage rating (600V versus 650V). Direct substitution is only valid for applications where the design current and voltage requirements do not exceed the IKW75N60TFKSA1 specifications.

Q: Are the TO-247-3 packages mechanically identical between these two devices?

A: Both devices use TO-247-3 through-hole packages. Mechanical compatibility for PCB mounting and heatsink attachment is maintained. Thermal interface requirements and mounting hole spacing are equivalent.

Q: What are the switching characteristic differences between these devices?

A: The IKW75N60TFKSA1 exhibits higher gate charge (470nC versus 210nC), faster turn-on delay (33ns versus 50ns), and slower turn-off delay (330ns versus 200ns) compared to the IRGP4790D-EPBF. Gate driver circuits must be evaluated for compatibility with these timing differences.

Q: Do both devices meet the same regulatory and compliance standards?

A: Yes. Both devices carry REACH Unaffected status, EAR99 export classification, and identical HTSUS commodity codes (8541.29.0095). Moisture sensitivity levels are equivalent (MSL 1 - Unlimited).

Q: What is the product availability status difference between these devices?

A: The IRGP4790D-EPBF is classified as Obsolete, indicating end-of-life status and limited availability. The IKW75N60TFKSA1 is classified as Active, indicating current production and ongoing availability.

Q: How do the power dissipation ratings compare?

A: The IRGP4790D-EPBF is rated for 455W maximum power dissipation, while the IKW75N60TFKSA1 is rated for 428W. The difference reflects the lower current rating of the substitute device.

Q: Are the operating temperature ranges identical?

A: Yes. Both devices operate across the same junction temperature range of -40°C to 175°C, ensuring thermal compatibility in equivalent thermal environments.