IRGP4760D-EPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP4760D-EPBF is a 650V, 90A IGBT manufactured by Infineon Technologies in TO-247-3 package configuration. This device is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing design requirements and procurement needs. The part operates across an industrial temperature range of -40°C to 175°C and delivers maximum power dissipation of 325W, making it suitable for high-voltage switching applications in power conversion and motor control circuits.

Substiute Parts

IRGP4760D-EPBF
Infineon TechnologiesIn Stock: 6008IRGP4760D-EPBF Datasheet
IRGP4760D-EPBF
Current Part
IKW60N60H3FKSA1
Infineon TechnologiesIn Stock: 1347IKW60N60H3FKSA1 Datasheet
IKW60N60H3FKSA1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 90 A
Current - Collector Pulsed (Icm) 144 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 48A V
Power - Max 325 W
Gate Charge 145 nC
Td (on/off) @ 25°C 70/140 ns
Reverse Recovery Time (trr) 170 ns
Operating Temperature Range -40 to 175 °C (TJ)
Package / Case TO-247-3
Mounting Type Through Hole
Product Status Obsolete

Substitute Part Grouping Explanation

Substitution of the IRGP4760D-EPBF is determined by electrical and mechanical compatibility across the following critical parameters:

Voltage Rating: The substitute part must operate at or above the 650V collector-emitter breakdown voltage of the original device. The IKW60N60H3FKSA1 operates at 600V, which is below the original specification but remains within acceptable margins for applications not requiring the full 650V rating.

Current Rating: The substitute must support the maximum collector current (Ic) and pulsed collector current (Icm) requirements. The IKW60N60H3FKSA1 provides 80A continuous and 180A pulsed current, which is lower than the original 90A/144A specification but suitable for applications with reduced current demands.

Package and Mounting: Both devices utilize TO-247-3 through-hole packaging, ensuring mechanical and thermal interface compatibility with existing PCB designs and heatsink mounting arrangements.

Temperature Range: Both devices operate across the identical -40°C to 175°C junction temperature range, maintaining thermal performance consistency.

Input Type: Both devices feature standard gate input configuration, ensuring gate drive circuit compatibility.

Parameter Comparison

Parameter IRGP4760D-EPBF (Main) IKW60N60H3FKSA1 (Substitute) Unit
Manufacturer Infineon Technologies Infineon Technologies
Category Transistors, IGBTs Transistors, IGBTs
Voltage - Collector Emitter Breakdown (Max) 650 600 V
Current - Collector (Ic) (Max) 90 80 A
Current - Collector Pulsed (Icm) 144 180 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 48A 2.3V @ 15V, 60A V
Power - Max 325 416 W
Gate Charge 145 375 nC
Td (on/off) @ 25°C 70/140 27/252 ns
Reverse Recovery Time (trr) 170 143 ns
Operating Temperature Range -40 to 175 -40 to 175 °C (TJ)
Package / Case TO-247-3 TO-247-3
Mounting Type Through Hole Through Hole
Input Type Standard Standard
Product Status Obsolete Active
REACH Status REACH Unaffected REACH Unaffected
ECCN EAR99 EAR99
HTSUS 8541.29.0095 8541.29.0095

Engineering Selection Recommendations

The IKW60N60H3FKSA1 is an active product with current manufacturing support from Infineon Technologies, providing supply chain continuity for the obsolete IRGP4760D-EPBF. Both devices maintain identical REACH compliance status and export classification (EAR99), ensuring regulatory consistency across procurement and deployment.

The substitute part operates at 600V versus the original 650V specification. Applications operating at or below 600V bus voltage are directly compatible. Applications requiring the full 650V rating require circuit redesign or alternative component selection.

The IKW60N60H3FKSA1 delivers higher maximum power dissipation (416W versus 325W) and improved pulsed current capability (180A versus 144A), providing enhanced thermal and transient performance margins. However, the substitute exhibits higher gate charge (375nC versus 145nC) and modified switching delay characteristics (27ns on-time versus 70ns, 252ns off-time versus 140ns), requiring gate drive circuit evaluation for timing-critical applications.

Both devices carry identical moisture sensitivity level (MSL 1 - Unlimited) and thermal operating range (-40°C to 175°C), ensuring compatibility with existing thermal management and storage protocols.

Frequently Asked Questions (FAQ)

Q: Can the IKW60N60H3FKSA1 directly replace the IRGP4760D-EPBF in all applications?

A: Direct replacement is limited by voltage rating. The substitute operates at 600V maximum versus the original 650V. Applications with bus voltages at or below 600V are compatible. Applications requiring 650V operation require alternative component selection or circuit modification.

Q: What are the primary electrical differences between these devices?

A: The IKW60N60H3FKSA1 provides lower continuous current (80A versus 90A) but higher pulsed current (180A versus 144A) and power dissipation (416W versus 325W). Gate charge is significantly higher (375nC versus 145nC), and switching delays differ substantially. These differences require gate drive circuit evaluation.

Q: Are both devices available in the same package?

A: Yes. Both the IRGP4760D-EPBF and IKW60N60H3FKSA1 utilize TO-247-3 through-hole packaging with identical mechanical and thermal interface specifications, enabling direct PCB and heatsink compatibility.

Q: What is the product status difference, and why does it matter?

A: The IRGP4760D-EPBF is classified as obsolete with no ongoing manufacturing support. The IKW60N60H3FKSA1 is active with current production and supply chain availability. Selection of the active substitute ensures long-term component availability and manufacturing consistency.

Q: Do these devices have identical regulatory compliance?

A: Yes. Both devices carry REACH Unaffected status and EAR99 export classification, maintaining regulatory consistency. Moisture sensitivity level (MSL 1 - Unlimited) and operating temperature range (-40°C to 175°C) are identical across both parts.

Q: How do the switching characteristics affect circuit design?

A: The substitute exhibits faster turn-on (27ns versus 70ns) but significantly slower turn-off (252ns versus 140ns). Gate charge is 2.6 times higher. Gate drive circuits must be evaluated for current sourcing/sinking capability and timing requirements in switching frequency-dependent applications.

Q: Is the higher power rating of the substitute beneficial?

A: The 416W maximum power dissipation of the IKW60N60H3FKSA1 versus 325W of the original provides additional thermal margin. However, this advantage applies only to applications where the lower continuous current rating (80A versus 90A) is acceptable.

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