IRGP4690D-EPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP4690D-EPBF is a 600V, 140A IGBT manufactured by Infineon Technologies in TO-247AD package configuration. This component is classified as obsolete, necessitating identification of functionally equivalent alternatives for ongoing system support and new design implementations. The part delivers 454W maximum power dissipation with switching characteristics optimized for high-current applications requiring through-hole mounting.

Substiute Parts

IRGP4690D-EPBF
Infineon TechnologiesIn Stock: 794IRGP4690D-EPBF Datasheet
IRGP4690D-EPBF
Current Part
IKW75N60TFKSA1
Infineon TechnologiesIn Stock: 4913IKW75N60TFKSA1 Datasheet
IKW75N60TFKSA1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 140 A
Current - Collector Pulsed (Icm) 225 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A V
Power - Max 454 W
Gate Charge 150 nC
Switching Energy (on/off) 2.47 / 2.16 mJ
Td (on/off) @ 25°C 50 / 200 ns
Reverse Recovery Time (trr) 155 ns
Operating Temperature Range -55 to 175 °C (TJ)
Package / Case TO-247-3 -
Mounting Type Through Hole -

Substitute Part Grouping Explanation

Substitution of the IRGP4690D-EPBF is determined by the following critical parameters:

Voltage Rating: The substitute must maintain 600V collector-emitter breakdown voltage to ensure safe operation within the same circuit topology.

Current Capability: The IRGP4690D-EPBF specifies 140A maximum collector current. Substitute parts must support equivalent or higher continuous current ratings to handle the same load conditions.

Package Compatibility: Both the main part and substitute must use TO-247-3 through-hole package configuration to ensure mechanical and thermal interface compatibility with existing PCB layouts and heatsink assemblies.

Switching Characteristics: Gate charge, switching delay times (Td on/off), and reverse recovery time (trr) determine circuit performance. Substitutes with comparable or improved switching energy characteristics maintain system efficiency.

Thermal Performance: Maximum power dissipation and operating temperature range must support the thermal environment of the original application.

The IKW75N60TFKSA1 qualifies as a substitute based on matching voltage rating (600V), compatible package (TO-247-3), and through-hole mounting. However, the reduced continuous current rating (80A versus 140A) requires application-level verification.

Parameter Comparison

Parameter IRGP4690D-EPBF IKW75N60TFKSA1 Unit
Manufacturer Infineon Technologies Infineon Technologies -
Category Transistors, IGBTs Transistors, IGBTs -
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 140 80 A
Current - Collector Pulsed (Icm) 225 225 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A 2V @ 15V, 75A V
Power - Max 454 428 W
Gate Charge 150 470 nC
Td (on/off) @ 25°C 50 / 200 33 / 330 ns
Reverse Recovery Time (trr) 155 121 ns
Operating Temperature Range -55 to 175 -40 to 175 °C (TJ)
Package / Case TO-247-3 TO-247-3 -
Mounting Type Through Hole Through Hole -
Product Status Obsolete Active -
RoHS Status Not specified ROHS3 Compliant -

Engineering Selection Recommendations

Product Status Consideration: The IRGP4690D-EPBF is classified as obsolete. The IKW75N60TFKSA1 maintains active product status with Infineon Technologies, ensuring continued availability, technical support, and manufacturing consistency.

Compliance and Certification: The IKW75N60TFKSA1 carries ROHS3 compliance certification, meeting current environmental and regulatory requirements. Both parts share identical REACH status (REACH Unaffected) and ECCN/HTSUS classifications, confirming regulatory equivalence.

Current Rating Differential: The primary distinction between these parts is the continuous collector current specification: 140A (IRGP4690D-EPBF) versus 80A (IKW75N60TFKSA1). Applications operating at continuous currents exceeding 80A require circuit-level analysis to confirm the substitute's adequacy.

Switching Performance Trade-offs: The IKW75N60TFKSA1 exhibits lower turn-on delay (33ns versus 50ns) and improved reverse recovery time (121ns versus 155ns), indicating faster switching characteristics. Conversely, turn-off delay increases (330ns versus 200ns) and gate charge rises significantly (470nC versus 150nC), requiring gate driver capability verification.

Temperature Range: The IRGP4690D-EPBF supports -55°C minimum junction temperature, while the IKW75N60TFKSA1 specifies -40°C minimum. Applications requiring operation below -40°C cannot use the substitute without thermal analysis.

Thermal Dissipation: Maximum power ratings are comparable (454W versus 428W), supporting similar thermal management approaches in properly designed heatsink configurations.

Frequently Asked Questions (FAQ)

Q: Can the IKW75N60TFKSA1 directly replace the IRGP4690D-EPBF in all applications?

A: Direct replacement is possible only when continuous collector current does not exceed 80A. Applications designed for the full 140A capability of the IRGP4690D-EPBF require circuit redesign or alternative substitute identification. Both parts share identical voltage ratings, package configuration, and mounting type, supporting mechanical and thermal interface compatibility.

Q: What are the switching performance implications of substitution?

A: The IKW75N60TFKSA1 provides faster turn-on switching (33ns versus 50ns) and improved reverse recovery characteristics (121ns versus 155ns), potentially reducing switching losses. However, turn-off delay extends to 330ns from 200ns, and gate charge increases to 470nC from 150nC. Gate driver circuits must supply sufficient charge capacity and switching speed to accommodate these parameters.

Q: Does the lower operating temperature minimum of the IKW75N60TFKSA1 affect substitution?

A: The IKW75N60TFKSA1 specifies -40°C minimum junction temperature compared to -55°C for the IRGP4690D-EPBF. Applications requiring operation below -40°C cannot use this substitute. Applications within the -40°C to 175°C range experience no temperature-related limitation.

Q: Are there compliance or regulatory differences between these parts?

A: The IKW75N60TFKSA1 carries ROHS3 compliance certification, while the IRGP4690D-EPBF does not specify RoHS status. Both parts share identical REACH status and trade classification codes. New designs should prioritize the ROHS3-compliant IKW75N60TFKSA1 to meet current environmental regulations.

Q: How does the gate charge difference impact circuit design?

A: The IKW75N60TFKSA1 requires 470nC gate charge versus 150nC for the IRGP4690D-EPBF. Gate driver circuits must deliver approximately 3.1 times greater charge capacity. Existing gate driver designs may require component upgrades or redesign to supply this increased charge within acceptable switching time windows.

Q: What is the significance of the Trench Field Stop technology in the IKW75N60TFKSA1?

A: The IKW75N60TFKSA1 incorporates Trench Field Stop (TrenchStop®) technology, which is a design feature of the substitute part. This technology influences the switching energy profile and reverse recovery characteristics. The provided specifications define the electrical performance; technology designation does not alter substitution eligibility based on electrical parameters.

Q: Can applications designed for 140A operation use the 80A-rated IKW75N60TFKSA1?

A: No. The 80A continuous current rating of the IKW75N60TFKSA1 is a hard limit. Applications requiring sustained currents above 80A will exceed the device's absolute maximum ratings, resulting in thermal runaway and device failure. Alternative substitutes with higher current ratings must be identified for such applications.

Q: Are the TO-247-3 packages of both parts mechanically identical?

A: Both parts use TO-247-3 through-hole package configuration, ensuring mechanical compatibility with existing PCB footprints and heatsink mounting interfaces. No mechanical redesign is required for package substitution.

Request Quote (Ships tomorrow)