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IRGP4660DPBF IGBT 600V 100A Equivalent & Substitute Parts
Part Overview
The IRGP4660DPBF is an Infineon Technologies IGBT rated for 600V collector-emitter breakdown voltage and 100A maximum collector current in a Through Hole TO-247AC package. This device is classified as Obsolete, necessitating identification of equivalent substitute components for ongoing applications. The part delivers 330W maximum power dissipation with switching energy specifications of 625µJ (on) and 1.28mJ (off). Substitute parts must maintain electrical compatibility within the 600V voltage class while accommodating the 100A current requirement and TO-247-3 package form factor.
Substiute Parts
Key Parameters
| Parameter | Value | Unit |
|---|---|---|
| Voltage - Collector Emitter Breakdown (Max) | 600 | V |
| Current - Collector (Ic) (Max) | 100 | A |
| Current - Collector Pulsed (Icm) | 144 | A |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 48A | V |
| Power - Max | 330 | W |
| Switching Energy (on) | 625 | µJ |
| Switching Energy (off) | 1.28 | mJ |
| Gate Charge | 140 | nC |
| Td (on/off) @ 25°C | 60/145 | ns |
| Reverse Recovery Time (trr) | 115 | ns |
| Operating Temperature Range | -55 to 175 | °C (TJ) |
| Mounting Type | Through Hole | - |
| Package / Case | TO-247-3 | - |
| RoHS Status | ROHS3 Compliant | - |
Substitute Part Grouping Explanation
Substitution of the IRGP4660DPBF is determined by the following critical electrical and mechanical parameters:
Voltage Class: All substitute parts must maintain 600V or higher collector-emitter breakdown voltage to ensure safe operation within the original design envelope.
Current Rating: Substitute parts must support a minimum collector current (Ic) of 100A to handle the original circuit load. Parts rated at 80A, 92A, 110A, or 120A are evaluated based on application headroom requirements.
Package Compatibility: All substitutes must use Through Hole mounting in TO-247-3 or equivalent package form factor to ensure mechanical and thermal interface compatibility.
Switching Characteristics: Gate charge, switching delay times (Td on/off), and reverse recovery time (trr) influence circuit performance but do not preclude substitution when voltage and current ratings are met.
Thermal Performance: Maximum power dissipation (330W) establishes the thermal design baseline. Substitute parts with equal or higher power ratings maintain thermal margin.
Compliance: All substitute parts must maintain ROHS3 compliance and REACH Unaffected status consistent with the original component.
Parameter Comparison
| Part Number | Manufacturer | Vce(br) Max (V) | Ic Max (A) | Icm (A) | Vce(on) @ Test (V) | Power Max (W) | Gate Charge (nC) | Td on/off (ns) | Package | Status |
|---|---|---|---|---|---|---|---|---|---|---|
| IRGP4660DPBF | Infineon | 600 | 100 | 144 | 1.9 | 330 | 140 | 60/145 | TO-247-3 | Obsolete |
| IKW50N60DTPXKSA1 | Infineon | 600 | 80 | 150 | 1.8 | 319.2 | 249 | 20/215 | TO-247-3 | Not For New Designs |
| STGW60H65DFB | STMicroelectronics | 650 | 80 | 240 | 2.0 | 375 | 306 | 51/160 | TO-247-3 | Active |
| IXGH36N60B3 | IXYS | 600 | 92 | 200 | 1.8 | 250 | 80 | 19/125 | TO-247-3 | Active |
| IXXH50N60B3D1 | IXYS | 600 | 120 | 200 | 1.8 | 600 | 70 | 27/100 | TO-247-3 | Active |
| NGTB45N60S2WG | onsemi | 600 | 45 | - | - | - | - | - | TO-247 | Active |
| STGW60V60DF | STMicroelectronics | 600 | 80 | 240 | 2.3 | 375 | 334 | 60/208 | TO-247-3 | Active |
| STGW80V60DF | STMicroelectronics | 600 | 120 | 240 | 2.3 | 469 | 448 | 60/220 | TO-247-3 | Last Time Buy |
| STGY50NC60WD | STMicroelectronics | 600 | 110 | 180 | 2.6 | 278 | 195 | 52/240 | TO-247-3 | Active |
Engineering Selection Recommendations
Primary Substitutes (Active Status, Full Current Capability):
IXXH50N60B3D1 (IXYS) and STGW80V60DF (STMicroelectronics) are the preferred substitutes. Both devices support 120A collector current, exceeding the original 100A requirement and providing design margin. IXXH50N60B3D1 delivers 600W power dissipation with lower gate charge (70nC) and faster switching times (27ns/100ns), improving efficiency. STGW80V60DF maintains 600V voltage class with 469W power capability and is rated for -55°C to 175°C operating range, matching the original thermal envelope. Both components are ROHS3 compliant and REACH Unaffected.
Secondary Substitutes (Active Status, Reduced Current):
STGY50NC60WD (STMicroelectronics) supports 110A collector current in the 600V class with 278W power dissipation. This part is suitable for applications where the original 100A requirement can be met with minimal margin. STGW60H65DFB (STMicroelectronics) and STGW60V60DF (STMicroelectronics) both support 80A collector current at 600V or 650V, appropriate only for applications where circuit load does not exceed 80A.
Limited Substitutes (Reduced Current Capability):
IXGH36N60B3 (IXYS) supports 92A collector current at 600V with 250W power dissipation. This part is suitable for applications where the original 100A specification includes design margin. NGTB45N60S2WG (onsemi) supports only 45A collector current and is not suitable for direct substitution of the 100A IRGP4660DPBF.
Obsolete or End-of-Life Status:
IKW50N60DTPXKSA1 (Infineon) is marked "Not For New Designs" and supports only 80A collector current. This part is not recommended for new applications.
Frequently Asked Questions (FAQ)
Q: Can IXGH36N60B3 directly replace IRGP4660DPBF in all applications?
A: IXGH36N60B3 supports 92A collector current versus the original 100A specification. Direct substitution is valid only if the circuit design includes sufficient current margin and the 92A rating meets application requirements. Verify actual circuit load current before selection.
Q: What is the difference between STGW60H65DFB and STGW60V60DF?
A: Both parts support 80A collector current in TO-247-3 packages. STGW60H65DFB is rated for 650V breakdown voltage with 375W power dissipation. STGW60V60DF is rated for 600V breakdown voltage with 375W power dissipation and higher gate charge (334nC). Selection depends on circuit voltage class requirements.
Q: Is IXXH50N60B3D1 suitable for applications requiring 100A continuous current?
A: IXXH50N60B3D1 supports 120A maximum collector current, providing 20A margin above the original 100A specification. This part is suitable for 100A continuous current applications. The 600W power dissipation exceeds the original 330W, improving thermal performance.
Q: Why is NGTB45N60S2WG listed as a substitute if it only supports 45A?
A: NGTB45N60S2WG is included in the provided substitute list but does not meet the 100A current requirement of IRGP4660DPBF. This part is not recommended for direct substitution and is listed for reference only.
Q: Are all substitute parts ROHS3 compliant?
A: All substitute parts listed are ROHS3 compliant and REACH Unaffected, maintaining regulatory compliance with the original IRGP4660DPBF component.
Q: What is the impact of higher gate charge on circuit performance?
A: Higher gate charge (measured in nanofarads) increases the energy required to switch the IGBT on and off. Substitute parts with higher gate charge values (such as STGW80V60DF at 448nC versus original 140nC) require higher gate drive current and may increase switching losses. Circuit gate drive capability must be verified before selection.
Q: Can substitute parts with 650V rating be used in 600V circuits?
A: Yes. Parts rated for 650V breakdown voltage (such as STGW60H65DFB) operate safely in 600V circuits, providing additional voltage margin. No circuit modification is required.
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