IRGP4660DPBF IGBT 600V 100A Equivalent & Substitute Parts

Part Overview

The IRGP4660DPBF is an Infineon Technologies IGBT rated for 600V collector-emitter breakdown voltage and 100A maximum collector current in a Through Hole TO-247AC package. This device is classified as Obsolete, necessitating identification of equivalent substitute components for ongoing applications. The part delivers 330W maximum power dissipation with switching energy specifications of 625µJ (on) and 1.28mJ (off). Substitute parts must maintain electrical compatibility within the 600V voltage class while accommodating the 100A current requirement and TO-247-3 package form factor.

Substiute Parts

IRGP4660DPBF
Infineon TechnologiesIn Stock: 1604IRGP4660DPBF Datasheet
IRGP4660DPBF
Current Part
IKW50N60DTPXKSA1
Infineon TechnologiesIn Stock: 1283IKW50N60DTPXKSA1 Datasheet
IKW50N60DTPXKSA1
MFR Recommended
STGW60H65DFB
STMicroelectronicsIn Stock: 27185STGW60H65DFB Datasheet
STGW60H65DFB
Direct
IXGH36N60B3
IXYSIn Stock: 5693IXGH36N60B3 Datasheet
IXGH36N60B3
MFR Recommended
IXXH50N60B3D1
IXYSIn Stock: 1386IXXH50N60B3D1 Datasheet
IXXH50N60B3D1
MFR Recommended
NGTB45N60S2WG
onsemiIn Stock: 1371NGTB45N60S2WG Datasheet
NGTB45N60S2WG
MFR Recommended
STGW60V60DF
STMicroelectronicsIn Stock: 47306STGW60V60DF Datasheet
STGW60V60DF
MFR Recommended
STGW80V60DF
STMicroelectronicsIn Stock: 16525STGW80V60DF Datasheet
STGW80V60DF
MFR Recommended
STGY50NC60WD
STMicroelectronicsIn Stock: 2024STGY50NC60WD Datasheet
STGY50NC60WD
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 144 A
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 48A V
Power - Max 330 W
Switching Energy (on) 625 µJ
Switching Energy (off) 1.28 mJ
Gate Charge 140 nC
Td (on/off) @ 25°C 60/145 ns
Reverse Recovery Time (trr) 115 ns
Operating Temperature Range -55 to 175 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-247-3 -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution of the IRGP4660DPBF is determined by the following critical electrical and mechanical parameters:

Voltage Class: All substitute parts must maintain 600V or higher collector-emitter breakdown voltage to ensure safe operation within the original design envelope.

Current Rating: Substitute parts must support a minimum collector current (Ic) of 100A to handle the original circuit load. Parts rated at 80A, 92A, 110A, or 120A are evaluated based on application headroom requirements.

Package Compatibility: All substitutes must use Through Hole mounting in TO-247-3 or equivalent package form factor to ensure mechanical and thermal interface compatibility.

Switching Characteristics: Gate charge, switching delay times (Td on/off), and reverse recovery time (trr) influence circuit performance but do not preclude substitution when voltage and current ratings are met.

Thermal Performance: Maximum power dissipation (330W) establishes the thermal design baseline. Substitute parts with equal or higher power ratings maintain thermal margin.

Compliance: All substitute parts must maintain ROHS3 compliance and REACH Unaffected status consistent with the original component.

Parameter Comparison

Part Number Manufacturer Vce(br) Max (V) Ic Max (A) Icm (A) Vce(on) @ Test (V) Power Max (W) Gate Charge (nC) Td on/off (ns) Package Status
IRGP4660DPBF Infineon 600 100 144 1.9 330 140 60/145 TO-247-3 Obsolete
IKW50N60DTPXKSA1 Infineon 600 80 150 1.8 319.2 249 20/215 TO-247-3 Not For New Designs
STGW60H65DFB STMicroelectronics 650 80 240 2.0 375 306 51/160 TO-247-3 Active
IXGH36N60B3 IXYS 600 92 200 1.8 250 80 19/125 TO-247-3 Active
IXXH50N60B3D1 IXYS 600 120 200 1.8 600 70 27/100 TO-247-3 Active
NGTB45N60S2WG onsemi 600 45 - - - - - TO-247 Active
STGW60V60DF STMicroelectronics 600 80 240 2.3 375 334 60/208 TO-247-3 Active
STGW80V60DF STMicroelectronics 600 120 240 2.3 469 448 60/220 TO-247-3 Last Time Buy
STGY50NC60WD STMicroelectronics 600 110 180 2.6 278 195 52/240 TO-247-3 Active

Engineering Selection Recommendations

Primary Substitutes (Active Status, Full Current Capability):

IXXH50N60B3D1 (IXYS) and STGW80V60DF (STMicroelectronics) are the preferred substitutes. Both devices support 120A collector current, exceeding the original 100A requirement and providing design margin. IXXH50N60B3D1 delivers 600W power dissipation with lower gate charge (70nC) and faster switching times (27ns/100ns), improving efficiency. STGW80V60DF maintains 600V voltage class with 469W power capability and is rated for -55°C to 175°C operating range, matching the original thermal envelope. Both components are ROHS3 compliant and REACH Unaffected.

Secondary Substitutes (Active Status, Reduced Current):

STGY50NC60WD (STMicroelectronics) supports 110A collector current in the 600V class with 278W power dissipation. This part is suitable for applications where the original 100A requirement can be met with minimal margin. STGW60H65DFB (STMicroelectronics) and STGW60V60DF (STMicroelectronics) both support 80A collector current at 600V or 650V, appropriate only for applications where circuit load does not exceed 80A.

Limited Substitutes (Reduced Current Capability):

IXGH36N60B3 (IXYS) supports 92A collector current at 600V with 250W power dissipation. This part is suitable for applications where the original 100A specification includes design margin. NGTB45N60S2WG (onsemi) supports only 45A collector current and is not suitable for direct substitution of the 100A IRGP4660DPBF.

Obsolete or End-of-Life Status:

IKW50N60DTPXKSA1 (Infineon) is marked "Not For New Designs" and supports only 80A collector current. This part is not recommended for new applications.

Frequently Asked Questions (FAQ)

Q: Can IXGH36N60B3 directly replace IRGP4660DPBF in all applications?

A: IXGH36N60B3 supports 92A collector current versus the original 100A specification. Direct substitution is valid only if the circuit design includes sufficient current margin and the 92A rating meets application requirements. Verify actual circuit load current before selection.

Q: What is the difference between STGW60H65DFB and STGW60V60DF?

A: Both parts support 80A collector current in TO-247-3 packages. STGW60H65DFB is rated for 650V breakdown voltage with 375W power dissipation. STGW60V60DF is rated for 600V breakdown voltage with 375W power dissipation and higher gate charge (334nC). Selection depends on circuit voltage class requirements.

Q: Is IXXH50N60B3D1 suitable for applications requiring 100A continuous current?

A: IXXH50N60B3D1 supports 120A maximum collector current, providing 20A margin above the original 100A specification. This part is suitable for 100A continuous current applications. The 600W power dissipation exceeds the original 330W, improving thermal performance.

Q: Why is NGTB45N60S2WG listed as a substitute if it only supports 45A?

A: NGTB45N60S2WG is included in the provided substitute list but does not meet the 100A current requirement of IRGP4660DPBF. This part is not recommended for direct substitution and is listed for reference only.

Q: Are all substitute parts ROHS3 compliant?

A: All substitute parts listed are ROHS3 compliant and REACH Unaffected, maintaining regulatory compliance with the original IRGP4660DPBF component.

Q: What is the impact of higher gate charge on circuit performance?

A: Higher gate charge (measured in nanofarads) increases the energy required to switch the IGBT on and off. Substitute parts with higher gate charge values (such as STGW80V60DF at 448nC versus original 140nC) require higher gate drive current and may increase switching losses. Circuit gate drive capability must be verified before selection.

Q: Can substitute parts with 650V rating be used in 600V circuits?

A: Yes. Parts rated for 650V breakdown voltage (such as STGW60H65DFB) operate safely in 600V circuits, providing additional voltage margin. No circuit modification is required.

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