IRGP4620D-EPBF Equivalent & Substitute Parts

Part Overview

The IRGP4620D-EPBF is a 600V, 32A IGBT manufactured by Infineon Technologies in TO-247AD package configuration. This component is classified as obsolete, making identification of functionally equivalent substitute parts essential for ongoing design support and production continuity. The part operates across an industrial temperature range of -40°C to 175°C and delivers 140W maximum power dissipation. Substitute parts must maintain electrical compatibility within the 600V voltage class while accommodating the collector current and thermal requirements of the original application.

Substiute Parts

IRGP4620D-EPBF
Infineon TechnologiesIn Stock: 1140IRGP4620D-EPBF Datasheet
IRGP4620D-EPBF
Current Part
IKW20N60TFKSA1
Infineon TechnologiesIn Stock: 1485IKW20N60TFKSA1 Datasheet
IKW20N60TFKSA1
MFR Recommended
IXDR35N60BD1
IXYSIn Stock: 824IXDR35N60BD1 Datasheet
IXDR35N60BD1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 32 A
Current - Collector Pulsed (Icm) 36 A
Power - Max 140 W
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 12A V
Gate Charge 25 nC
Switching Energy (on/off) 75µJ / 225µJ µJ
Td (on/off) @ 25°C 31ns / 83ns ns
Reverse Recovery Time (trr) 68 ns
Operating Temperature Range -40 to 175 °C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Input Type Standard

Substitute Part Grouping Explanation

Substitution eligibility for the IRGP4620D-EPBF is determined by the following critical parameters:

Voltage Class: All substitute parts must maintain 600V collector-emitter breakdown voltage rating to ensure safe operation within the original circuit design envelope.

Current Rating: Substitute parts must support minimum collector current (Ic) equal to or exceeding 32A at rated conditions. Parts with higher current ratings (38A, 40A) provide design margin and are acceptable.

Package Compatibility: All substitutes must use TO-247-3 or equivalent through-hole package footprints to ensure mechanical and thermal interface compatibility.

Input Type: Standard gate input configuration is required for direct gate drive circuit compatibility.

Thermal Performance: Operating temperature range and power dissipation capability must support the thermal requirements of the application.

The two substitute parts identified meet these criteria through different IGBT technology approaches: trench field-stop technology (IKW20N60TFKSA1) and NPT technology (IXDR35N60BD1).

Parameter Comparison

Parameter IRGP4620D-EPBF IKW20N60TFKSA1 IXDR35N60BD1 Unit
Manufacturer Infineon Technologies Infineon Technologies IXYS
Voltage - Collector Emitter Breakdown (Max) 600 600 600 V
Current - Collector (Ic) (Max) 32 40 38 A
Current - Collector Pulsed (Icm) 36 60 48 A
Power - Max 140 166 125 W
Vce(on) (Max) @ Vge, Ic 1.85V @ 15V, 12A 2.05V @ 15V, 20A 2.7V @ 15V, 35A V
Gate Charge 25 120 140 nC
Reverse Recovery Time (trr) 68 41 40 ns
Input Type Standard Standard Standard
Mounting Type Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3
Product Status Obsolete Active Active
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant
REACH Status REACH Unaffected REACH Unaffected REACH Unaffected

Engineering Selection Recommendations

IKW20N60TFKSA1 (Infineon Technologies - Trench Field Stop):

This substitute provides the closest electrical performance match to the IRGP4620D-EPBF. The 40A collector current rating exceeds the original 32A specification, providing operational margin. The part is manufactured by the same supplier as the original component, ensuring consistent quality and support infrastructure. ROHS3 compliance and active product status ensure long-term availability. The trench field-stop technology delivers improved switching characteristics with lower reverse recovery time (41ns vs. 68ns), reducing switching losses in high-frequency applications. Gate charge of 120nC requires gate drive circuit evaluation to confirm compatibility with existing driver specifications.

IXDR35N60BD1 (IXYS - NPT Technology):

This substitute meets the 600V voltage and 38A current requirements with active product status and ROHS3 compliance. The NPT technology approach differs from the original part, resulting in higher on-state voltage (2.7V vs. 1.85V) and higher gate charge (140nC). The 125W power rating is lower than the original 140W specification. This part is suitable for applications where the higher on-state losses can be accommodated within thermal design constraints. The ISOPLUS247™ package maintains mechanical compatibility with TO-247-3 footprints.

Both substitute parts carry identical REACH and ECCN classifications as the original component, confirming regulatory equivalence for export and environmental compliance purposes.

Frequently Asked Questions (FAQ)

Q: Can the IKW20N60TFKSA1 be used as a direct replacement for the IRGP4620D-EPBF?

A: Yes, the IKW20N60TFKSA1 is electrically and mechanically compatible. Both parts operate at 600V, support the required 32A collector current (IKW20N60TFKSA1 rated at 40A), use TO-247-3 package configuration, and employ standard gate input. Gate drive circuits must be evaluated for the increased gate charge (120nC vs. 25nC) to ensure adequate driver capability.

Q: What is the primary difference between the two substitute parts?

A: The IKW20N60TFKSA1 uses trench field-stop IGBT technology with lower switching losses and faster switching times. The IXDR35N60BD1 uses NPT technology with higher on-state voltage but comparable reverse recovery time. Technology selection depends on whether the application prioritizes switching efficiency or on-state conduction losses.

Q: Are both substitute parts available in the same package as the original?

A: Both substitutes use TO-247-3 package configuration. The IKW20N60TFKSA1 is supplied in PG-TO247-3-1 package designation, and the IXDR35N60BD1 uses ISOPLUS247™ package designation. Both are mechanically compatible with TO-247-3 footprints and mounting hardware.

Q: What is the impact of higher gate charge on circuit design?

A: The substitute parts have significantly higher gate charge (120nC and 140nC vs. 25nC). This requires gate drive circuits capable of supplying adequate charge within acceptable switching time windows. Existing gate driver circuits must be verified for sufficient output current and voltage swing capability.

Q: Are the substitute parts compliant with current environmental regulations?

A: Both substitute parts are ROHS3 compliant and REACH unaffected, meeting current environmental and regulatory requirements. The original IRGP4620D-EPBF is REACH unaffected but RoHS status is not specified.

Q: Which substitute part should be selected for new designs?

A: Selection depends on application requirements. For applications prioritizing switching efficiency and lower switching losses, the IKW20N60TFKSA1 is preferred. For applications where on-state conduction losses are less critical, the IXDR35N60BD1 offers an alternative from a different manufacturer, providing supply chain diversification.

Q: What is the operating temperature range for each substitute?

A: The IKW20N60TFKSA1 operating temperature range is not specified in the provided data. The IXDR35N60BD1 operates from -55°C to 150°C (TJ), which is narrower than the original part's -40°C to 175°C range. Applications requiring operation above 150°C must use the IKW20N60TFKSA1 or verify temperature capability through manufacturer documentation.

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