IRGP4266-EPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP4266-EPBF is a 650V, 140A IGBT manufactured by Infineon Technologies in TO-247AD package configuration. This device is classified as obsolete, making identification of functionally equivalent substitute components essential for ongoing system support and new design alternatives.

The IRGP4266-EPBF operates across an industrial temperature range of -40°C to 175°C junction temperature and delivers maximum power dissipation of 450W. As an obsolete product, direct replacement options must satisfy equivalent electrical performance within the allowed parameter tolerances for this IGBT category.

Substiute Parts

IRGP4266-EPBF
Infineon TechnologiesIn Stock: 916IRGP4266-EPBF Datasheet
IRGP4266-EPBF
Current Part
IGW50N60TPXKSA1
Infineon TechnologiesIn Stock: 982IGW50N60TPXKSA1 Datasheet
IGW50N60TPXKSA1
MFR Recommended
FGH75T65UPD-F085
onsemiIn Stock: 6037FGH75T65UPD-F085 Datasheet
FGH75T65UPD-F085
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 140 A
Current - Collector Pulsed (Icm) 300 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A V
Power - Max 450 W
Switching Energy (on) 3.2 mJ
Switching Energy (off) 1.7 mJ
Gate Charge 210 nC
Td (on) @ 25°C 80 ns
Td (off) @ 25°C 200 ns
Operating Temperature Range (TJ) -40 to 175 °C
Mounting Type Through Hole -
Package / Case TO-247-3 -
Input Type Standard -

Substitute Part Grouping Explanation

Substitute parts for the IRGP4266-EPBF are selected based on strict alignment with the following electrical and mechanical criteria:

Primary Selection Criteria:

  • Voltage rating: 600V minimum to 650V maximum
  • Collector current (Ic): 80A minimum to 150A maximum
  • Package type: TO-247-3 through-hole configuration
  • Input type: Standard gate drive
  • Operating temperature range: -40°C to 175°C minimum
  • Mounting type: Through hole

Substitution Logic: Equivalent parts must maintain voltage class compatibility (600V–650V range) and current handling within the specified bounds. Gate charge, switching energy, and on-state voltage variations are acceptable within the IGBT category tolerances for this voltage and current class. Package compatibility (TO-247-3) is mandatory for mechanical and thermal interface requirements.

Parameter Comparison

Parameter IRGP4266-EPBF IGW50N60TPXKSA1 FGH75T65UPD-F085 Unit
Manufacturer Infineon Technologies Infineon Technologies onsemi -
Voltage - Collector Emitter Breakdown (Max) 650 600 650 V
Current - Collector (Ic) (Max) 140 80 150 A
Current - Collector Pulsed (Icm) 300 150 225 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A 1.8V @ 15V, 50A 2.3V @ 15V, 75A V
Power - Max 450 319.2 375 W
Switching Energy (on) 3.2 1.53 2.85 mJ
Switching Energy (off) 1.7 0.85 1.2 mJ
Gate Charge 210 249 578 nC
Td (on) @ 25°C 80 20 32 ns
Td (off) @ 25°C 200 215 166 ns
Operating Temperature Range (TJ) -40 to 175 -40 to 175 -55 to 175 °C
Package / Case TO-247-3 TO-247-3 TO-247-3 -
Product Status Obsolete Not For New Designs Not For New Designs -
RoHS Status Not specified ROHS3 Compliant ROHS3 Compliant -

Engineering Selection Recommendations

IGW50N60TPXKSA1 (Infineon Technologies): This substitute operates at 600V maximum voltage rating, which is 50V below the IRGP4266-EPBF specification. Collector current is rated at 80A, representing a 60A reduction from the original part. This device is suitable for applications where the system voltage does not exceed 600V and current requirements do not exceed 80A. The IGW50N60TPXKSA1 features lower switching energy and faster switching times, reducing gate charge requirements. Product status is "Not For New Designs," indicating limited long-term availability. RoHS3 compliance is confirmed.

FGH75T65UPD-F085 (onsemi): This substitute maintains the 650V voltage rating of the IRGP4266-EPBF and provides 150A collector current, exceeding the original specification by 10A. Maximum power dissipation is 375W, which is 75W below the original device. The FGH75T65UPD-F085 is qualified to AEC-Q101 automotive standards and operates across an extended temperature range (-55°C to 175°C). Gate charge is significantly higher at 578nC compared to 210nC in the original part, requiring consideration in gate drive circuit design. RoHS3 compliance and REACH compliance are confirmed. Product status is "Not For New Designs."

Both substitute parts are available in TO-247-3 through-hole package configuration and maintain standard gate input type compatibility with the IRGP4266-EPBF.

Frequently Asked Questions (FAQ)

Q: Can IGW50N60TPXKSA1 directly replace IRGP4266-EPBF in all applications?

A: No. The IGW50N60TPXKSA1 operates at 600V maximum, which is 50V lower than the IRGP4266-EPBF 650V rating. Applications operating above 600V require the FGH75T65UPD-F085 or equivalent 650V-rated device. Additionally, the 80A current rating is 60A below the original specification.

Q: What are the package compatibility requirements?

A: Both substitute parts use TO-247-3 through-hole package, identical to the IRGP4266-EPBF. Mechanical mounting and thermal interface compatibility are maintained. PCB layout and heatsink attachment remain unchanged.

Q: How does gate charge affect circuit design when substituting with FGH75T65UPD-F085?

A: The FGH75T65UPD-F085 has gate charge of 578nC compared to 210nC in the IRGP4266-EPBF. Gate drive circuits must supply sufficient charge capacity. Higher gate charge increases switching losses and requires evaluation of gate resistor values and driver output current capability.

Q: Are there temperature range differences between substitutes?

A: The IRGP4266-EPBF and IGW50N60TPXKSA1 both operate from -40°C to 175°C junction temperature. The FGH75T65UPD-F085 extends the lower temperature limit to -55°C, providing wider operating range for cold-environment applications.

Q: What is the significance of "Not For New Designs" status on substitute parts?

A: Both substitute parts carry "Not For New Designs" status, indicating manufacturers are not recommending these devices for new product development. Long-term availability cannot be guaranteed. For new designs, consultation with component suppliers for current-generation alternatives is necessary.

Q: How do switching energy differences impact thermal design?

A: The IRGP4266-EPBF has switching energy of 3.2mJ (on) and 1.7mJ (off). IGW50N60TPXKSA1 has lower values (1.53mJ on, 0.85mJ off), reducing switching losses. FGH75T65UPD-F085 has intermediate values (2.85mJ on, 1.2mJ off). Lower switching energy reduces heatsink requirements and improves overall system efficiency.

Q: Is RoHS3 compliance required for substitution?

A: RoHS3 compliance is confirmed for both substitute parts. The original IRGP4266-EPBF does not specify RoHS status. If RoHS3 compliance is a system requirement, both substitutes satisfy this criterion.

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