IRGP4263-EPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP4263-EPBF is a 650V, 90A IGBT manufactured by Infineon Technologies in TO-247-3 package configuration. This device is classified as obsolete product status. Due to obsolescence, equivalent substitute parts with compatible electrical and mechanical specifications are required for design continuity and procurement alternatives. Substitute parts must maintain voltage rating, current handling capability, power dissipation, and through-hole TO-247-3 mounting compatibility.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	650	V
Current - Collector (Ic) (Max)	90	A
Current - Collector Pulsed (Icm)	192	A
Power - Max	300	W
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 48A	V
Gate Charge	150	nC
Switching Energy (on/off)	1.7mJ / 1mJ	mJ / mJ
Td (on/off) @ 25°C	70ns / 140ns	ns / ns
Operating Temperature Range	-40 to 175	°C
Mounting Type	Through Hole	-
Package / Case	TO-247-3	-
Product Status	Obsolete	-

Substitute Part Grouping Explanation

Substitution logic for the IRGP4263-EPBF is based on the following critical parameters:

Primary Compatibility Criteria:

Voltage rating: 650V minimum (allows 600V minimum for reduced voltage margin applications)
Current rating: 80A minimum continuous collector current
Package: TO-247-3 through-hole mounting
Input type: Standard gate drive
Operating temperature: -40°C to 175°C junction temperature range

Substitution Categories:

Category 1: Direct Voltage & Current Match (650V, 80A+) Parts meeting or exceeding 650V breakdown voltage and 80A continuous current with TO-247-3 packaging. These provide equivalent or superior performance with active product status.

Category 2: Reduced Voltage Tolerance (600V, 80A+) Parts rated at 600V breakdown voltage with 80A+ continuous current. Suitable for applications with reduced voltage margin requirements while maintaining current and power handling.

Category 3: Enhanced Current Capability (650V, 100A+) Parts exceeding 90A continuous current rating at 650V. Provide design margin for thermal and electrical stress conditions.

All substitute parts maintain through-hole TO-247-3 mounting compatibility and standard gate drive input configuration.

Parameter Comparison

Part Number	Manufacturer	Vce(br) Max (V)	Ic Max (A)	Icm (A)	Power Max (W)	Vce(on) @ Test (V)	Gate Charge (nC)	Td on/off (ns)	Package	Status
IRGP4263-EPBF	Infineon	650	90	192	300	2.1	150	70/140	TO-247-3	Obsolete
IKW50N65F5FKSA1	Infineon	650	80	150	305	2.1	120	21/175	TO-247-3	Active
IKW60N60H3FKSA1	Infineon	600	80	180	416	2.3	375	27/252	TO-247-3	Active
FGH60T65SHD-F155	onsemi	650	120	180	349	2.1	102	26/87	TO-247-3	Active
IXXH40N65B4	IXYS	650	120	240	455	1.8	77	28/144	TO-247-3	Active
IXXH60N65B4	IXYS	650	116	250	455	2.0	95	37/145	TO-247-3	Active
IXXH60N65B4H1	IXYS	650	116	230	380	2.0	95	37/145	TO-247-3	Active
IXXH60N65C4	IXYS	650	118	240	455	2.2	94	37/133	TO-247-3	Active
IXYH40N65C3H1	IXYS	650	80	180	300	2.2	70	26/106	TO-247-3	Active
STGW40H65DFB	STMicroelectronics	650	80	160	283	2.0	210	40/142	TO-247-3	Active
STGW60H65DFB	STMicroelectronics	650	80	240	375	2.0	306	51/160	TO-247-3	Active

Engineering Selection Recommendations

Primary Substitutes (Recommended Priority):

IKW50N65F5FKSA1 (Infineon Technologies, Active Status)

Maintains 650V voltage rating with 80A continuous current
Equivalent power dissipation (305W vs. 300W)
Lower gate charge (120nC vs. 150nC) reduces gate drive complexity
Faster switching times (21ns on vs. 70ns on)
TrenchStop® series technology provides active product support
ROHS3 compliant, REACH unaffected

FGH60T65SHD-F155 (onsemi, Active Status)

Exceeds voltage and current specifications (650V, 120A)
Lower gate charge (102nC) improves switching efficiency
Faster switching times (26ns on, 87ns off)
Trench Field Stop technology
Extended operating temperature range (-55°C to 175°C)
ROHS3 compliant, REACH unaffected
High inventory availability (23,300 pcs)

IXXH40N65B4 (IXYS, Active Status)

650V rating with 120A continuous current capability
Lowest Vce(on) specification (1.8V) reduces conduction losses
GenX4™ series with active product support
ROHS3 compliant, REACH unaffected

Secondary Substitutes (Voltage Tolerance Applications):

IKW60N60H3FKSA1 (Infineon Technologies, Active Status)

600V rating suitable for reduced voltage margin designs
80A continuous current with higher power rating (416W)
Trench Field Stop technology
ROHS3 compliant, REACH unaffected

IXYH40N65C3H1 (IXYS, Active Status)

Direct current and power match (80A, 300W)
650V rating with lower gate charge (70nC)
GenX3™ series with active product support
ROHS3 compliant, REACH unaffected

Enhanced Capability Substitutes:

IXXH60N65B4 and IXXH60N65C4 (IXYS, Active Status)

650V rating with 116-118A continuous current
Higher power dissipation capability (455W)
GenX4™ series technology
ROHS3 compliant, REACH unaffected

STGW40H65DFB and STGW60H65DFB (STMicroelectronics, Active Status)

650V rating with 80A continuous current
Trench Field Stop technology
Extended temperature range (-55°C to 175°C)
ROHS3 compliant, REACH unaffected
High inventory availability

All recommended substitutes maintain TO-247-3 through-hole packaging, standard gate drive input configuration, and operating temperature range compatibility with the original IRGP4263-EPBF specification.

Frequently Asked Questions (FAQ)

Q: Can IRGP4263-EPBF be directly replaced with IKW50N65F5FKSA1?

A: Yes. Both devices share 650V voltage rating, 80A+ continuous current capability, and TO-247-3 package configuration. The IKW50N65F5FKSA1 maintains equivalent power dissipation (305W vs. 300W) with improved switching characteristics and active product status.

Q: What is the difference between 650V and 600V rated substitutes?

A: 650V devices provide full voltage margin for the original specification. 600V devices (such as IKW60N60H3FKSA1) are suitable only for applications where system voltage does not exceed 600V. Verify application maximum voltage before selecting 600V alternatives.

Q: Why do some substitutes have higher gate charge specifications?

A: Gate charge (nC) affects gate drive circuit requirements and switching speed. Higher gate charge (e.g., STGW60H65DFB at 306nC vs. IRGP4263-EPBF at 150nC) requires stronger gate drive capability but does not prevent substitution if gate drive circuit is rated accordingly. Lower gate charge devices reduce gate drive power consumption.

Q: Are all substitute parts RoHS3 compliant?

A: Yes. All listed substitute parts carry ROHS3 compliance certification. The original IRGP4263-EPBF does not specify RoHS status due to obsolete classification.

Q: What is the significance of Trench Field Stop (TFS) technology in substitutes?

A: Trench Field Stop technology (used in FGH60T65SHD-F155, IKW60N60H3FKSA1, STGW40H65DFB, STGW60H65DFB) provides improved switching performance and reduced switching losses compared to standard IGBT designs. This is a manufacturing technology difference, not a functional incompatibility.

Q: Can I use IXXH60N65B4 (116A) instead of IRGP4263-EPBF (90A)?

A: Yes. Higher current rating provides design margin and thermal headroom. The IXXH60N65B4 maintains 650V voltage rating and TO-247-3 package compatibility. Verify that PCB thermal design and gate drive circuit are compatible with the substitute device specifications.

Q: What is the difference between TO-247-3 and TO-247AD packaging?

A: Both are through-hole TO-247 variants with three leads (Gate, Collector, Emitter). TO-247AD is a specific Infineon designation. All listed substitutes use standard TO-247-3 package, which is mechanically and electrically compatible with TO-247AD footprints.

Q: Which substitute offers the lowest conduction losses?

A: IXXH40N65B4 specifies the lowest Vce(on) at 1.8V (tested at 15V gate, 40A collector current). Lower Vce(on) reduces conduction power dissipation in high-current applications.

Q: Are switching time differences critical for substitution?

A: Switching times (Td on/off) affect EMI characteristics and gate drive circuit timing. Faster switching (e.g., IKW50N65F5FKSA1 at 21ns on) reduces switching losses but may increase EMI. Slower switching (e.g., IKW60N60H3FKSA1 at 27ns on) may require gate drive circuit adjustment. Verify gate drive circuit compatibility with substitute device switching characteristics.

Q: What inventory status should I prioritize?

A: Active product status ensures long-term availability and technical support. All listed substitutes carry Active status. FGH60T65SHD-F155 and STGW60H65DFB offer highest inventory levels (23,300 and 27,100 pcs respectively), providing supply chain security.

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