IRGP4069DPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP4069DPBF is a Trench IGBT manufactured by Infineon Technologies, rated for 600V collector-emitter breakdown voltage and 76A continuous collector current in a TO-247AC through-hole package. This device is classified as Obsolete, making identification of functionally equivalent alternatives necessary for ongoing system support and new design considerations.

The IRGP4069DPBF operates across a junction temperature range of -55°C to 175°C and delivers maximum power dissipation of 268W. Its Trench architecture provides switching energy characteristics of 390µJ (on) and 632µJ (off) at specified test conditions.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	76	A
Current - Collector Pulsed (Icm)	105	A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 35A	V
Power - Max	268	W
Switching Energy (on)	390	µJ
Switching Energy (off)	632	µJ
Gate Charge	69	nC
Td (on/off) @ 25°C	46/105	ns
Reverse Recovery Time (trr)	120	ns
Operating Temperature Range (TJ)	-55 to 175	°C
Package / Case	TO-247-3	-
Mounting Type	Through Hole	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitution of the IRGP4069DPBF is determined by the following critical parameters:

Voltage Rating: All substitute parts must maintain 600V collector-emitter breakdown voltage to ensure safe operation within the same circuit topology.

Current Rating: Substitute parts must support continuous collector current (Ic) of at least 76A. Parts rated at 80A or higher satisfy this requirement.

Package Type: All substitutes must use TO-247-3 through-hole packaging to maintain mechanical and thermal interface compatibility.

IGBT Architecture: Substitute parts may employ Trench, Trench Field Stop, or PT (Punch-Through) architectures, as these represent different technology generations within the same voltage and current class.

Operating Temperature: Substitute parts must support the full -55°C to 175°C junction temperature range or equivalent.

Compliance: All substitute parts must maintain ROHS3 compliance and REACH unaffected status.

The substitute parts identified fall into two categories: MFR Recommended substitutes from Infineon Technologies (IKW50N60DTPXKSA1, IKW75N60TFKSA1) and Direct alternatives from other manufacturers (STGW60V60F from STMicroelectronics, IXGH72N60A3 and IXGH64N60B3 from IXYS).

Parameter Comparison

Parameter	IRGP4069DPBF	IKW50N60DTPXKSA1	IKW75N60TFKSA1	STGW60V60F	IXGH72N60A3	STGW39NC60VD
Manufacturer	Infineon	Infineon	Infineon	STMicroelectronics	IXYS	STMicroelectronics
Voltage - Collector Emitter Breakdown (Max)	600V	600V	600V	600V	600V	600V
Current - Collector (Ic) (Max)	76A	80A	80A	80A	75A	80A
Current - Collector Pulsed (Icm)	105A	150A	225A	240A	400A	220A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 35A	1.8V @ 15V, 50A	2V @ 15V, 75A	2.3V @ 15V, 60A	1.35V @ 15V, 60A	2.4V @ 15V, 30A
Power - Max	268W	319.2W	428W	375W	540W	250W
Gate Charge	69nC	249nC	470nC	334nC	230nC	126nC
Td (on/off) @ 25°C	46/105ns	20/215ns	33/330ns	60/208ns	31/320ns	33/178ns
Reverse Recovery Time (trr)	120ns	115ns	121ns	Not specified	Not specified	45ns
Operating Temperature Range (TJ)	-55 to 175°C	-40 to 175°C	-40 to 175°C	-55 to 175°C	-55 to 150°C	-55 to 150°C
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
Mounting Type	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole	Through Hole
Product Status	Obsolete	Not For New Designs	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

For Active Product Status Priority:

IKW75N60TFKSA1 (Infineon) and STGW60V60F (STMicroelectronics) are classified as Active products and represent the primary substitution path. Both devices maintain 600V voltage rating, 80A continuous current capability, and TO-247-3 packaging. IKW75N60TFKSA1 offers higher power dissipation (428W) and pulsed current capability (225A), while STGW60V60F provides 375W power rating with 240A pulsed current.

For Infineon Technology Continuity:

IKW50N60DTPXKSA1 maintains Infineon manufacturer continuity but carries "Not For New Designs" status. This part is suitable for legacy system maintenance where Infineon device consistency is required. It provides 319.2W power dissipation and 150A pulsed current.

For Extended Temperature Range:

STGW60V60F and IRGP4069DPBF both support the full -55°C to 175°C operating range. IXGH72N60A3 and STGW39NC60VD are limited to -55°C to 150°C maximum junction temperature.

For Switching Performance:

IXGH72N60A3 (IXYS) demonstrates the lowest Vce(on) at 1.35V @ 15V, 60A, indicating superior conduction efficiency. STGW39NC60VD exhibits the fastest switching with 33ns turn-on and 178ns turn-off times, plus the lowest gate charge at 126nC.

Compliance Verification:

All identified substitutes maintain ROHS3 compliance and REACH unaffected status, matching the original IRGP4069DPBF certification profile.

Frequently Asked Questions (FAQ)

Q: Can IKW75N60TFKSA1 directly replace IRGP4069DPBF in existing PCB layouts?

A: Yes. Both devices use TO-247-3 through-hole packaging with identical pin configuration and mechanical dimensions. No PCB modification is required. However, the higher gate charge (470nC vs. 69nC) and extended switching times may require gate driver circuit evaluation for optimal performance.

Q: What is the primary difference between Trench and Trench Field Stop IGBT architectures in these substitutes?

A: Trench Field Stop (FS) technology, used in IKW50N60DTPXKSA1 and IKW75N60TFKSA1, provides improved switching characteristics and higher current density compared to standard Trench architecture. This results in higher power dissipation capability and lower switching losses at the cost of increased gate charge.

Q: Why does IXGH72N60A3 have a lower maximum operating temperature (150°C) compared to IRGP4069DPBF (175°C)?

A: IXGH72N60A3 uses PT (Punch-Through) IGBT architecture optimized for different thermal and switching characteristics. The 150°C maximum junction temperature is a design specification for this device class and does not indicate inferior quality. System thermal design must account for this limitation.

Q: Is STGW39NC60VD suitable for high-frequency switching applications?

A: STGW39NC60VD exhibits fast switching characteristics (33ns turn-on, 178ns turn-off) and low gate charge (126nC), making it suitable for higher frequency operation. However, its lower power rating (250W) and lower pulsed current (220A) compared to other substitutes must be verified against application requirements.

Q: What inventory considerations apply to these substitute parts?

A: IKW75N60TFKSA1 has the highest inventory availability (4900 pcs), followed by STGW39NC60VD (15906 pcs) and IXGH72N60A3 (19504 pcs). IKW50N60DTPXKSA1 has 1204 pcs available. STGW60V60F has 640 pcs in stock. Inventory levels should be verified with suppliers for production planning.

Q: Can multiple substitute parts be used interchangeably within the same system?

A: No. While all substitutes meet the 600V/76A minimum specifications, their different switching characteristics, gate charges, and thermal properties require individual circuit evaluation. Mixing different substitute parts in parallel or in the same system design is not recommended without detailed electrical analysis.

Q: Does the "Not For New Designs" status of IKW50N60DTPXKSA1 affect its reliability?

A: "Not For New Designs" indicates the manufacturer recommends this part for legacy system support only. The part maintains full ROHS3 compliance and REACH unaffected status. It is suitable for replacement in existing systems but should not be selected for new product development.

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