IRGP4066DPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP4066DPBF is an Infineon Technologies IGBT Trench device rated for 600V collector-emitter breakdown voltage and 140A continuous collector current in a TO-247AC through-hole package. This component is classified as obsolete product status. Identifying equivalent and substitute parts is necessary to maintain design continuity, ensure supply chain availability, and support ongoing production requirements for applications utilizing this IGBT topology.

Key Parameters

Parameter	Value	Unit
Voltage - Collector Emitter Breakdown (Max)	600	V
Current - Collector (Ic) (Max)	140	A
Current - Collector Pulsed (Icm)	225	A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A	V
Power - Max	454	W
Gate Charge	150	nC
Switching Energy (on/off)	2.47 / 2.16	mJ
Td (on/off) @ 25°C	50 / 200	ns
Reverse Recovery Time (trr)	155	ns
Operating Temperature Range	-55 to 175	°C (TJ)
Mounting Type	Through Hole	-
Package / Case	TO-247-3	-
IGBT Type	Trench	-
RoHS Status	ROHS3 Compliant	-

Substitute Part Grouping Explanation

Substitute parts for the IRGP4066DPBF are selected based on strict electrical and mechanical compatibility criteria. The primary substitution parameters are:

Critical Matching Parameters:

Voltage - Collector Emitter Breakdown (Max): 600V or higher
Current - Collector (Ic) (Max): 140A or higher
Package / Case: TO-247-3 or compatible through-hole TO-247 variants
Mounting Type: Through Hole
IGBT Type: Trench or Trench Field Stop topology
Input Type: Standard gate drive

Secondary Compatibility Parameters:

Vce(on) characteristics within acceptable operating range
Gate Charge and switching energy profiles suitable for existing gate drive circuits
Operating temperature range encompassing -55°C to 175°C
RoHS3 compliance and REACH unaffected status

Substitute parts are grouped into two categories: Infineon Technologies manufacturer-recommended alternatives (active product status) and cross-manufacturer direct substitutes meeting equivalent electrical specifications.

Parameter Comparison

Parameter	IRGP4066DPBF	IGW75N60H3FKSA1	IKW75N60TFKSA1	STGW80H65DFB	IXXH75N60B3D1	IXXH75N60C3	IXXR100N60B3H1
Manufacturer	Infineon	Infineon	Infineon	STMicroelectronics	IXYS	IXYS	IXYS
Voltage - Collector Emitter Breakdown (Max)	600V	600V	600V	650V	600V	600V	600V
Current - Collector (Ic) (Max)	140A	140A	80A	120A	160A	150A	145A
Current - Collector Pulsed (Icm)	225A	225A	225A	240A	300A	300A	440A
Vce(on) (Max) @ Vge, Ic	2.1V @ 15V, 75A	2.3V @ 15V, 75A	2V @ 15V, 75A	2V @ 15V, 80A	1.85V @ 15V, 60A	2.3V @ 15V, 60A	1.8V @ 15V, 70A
Power - Max	454W	428W	428W	469W	750W	750W	400W
Gate Charge	150nC	470nC	470nC	414nC	107nC	107nC	143nC
Switching Energy (on/off)	2.47 / 2.16 mJ	3 / 1.7 mJ	4.5 mJ	2.1 / 1.5 mJ	1.7 / 1.5 mJ	1.6 / 0.8 mJ	1.9 / 2 mJ
Td (on/off) @ 25°C	50 / 200 ns	31 / 265 ns	33 / 330 ns	84 / 280 ns	35 / 118 ns	35 / 90 ns	30 / 120 ns
Reverse Recovery Time (trr)	155ns	-	121ns	85ns	25ns	-	140ns
Operating Temperature Range	-55 to 175°C	-40 to 175°C	-40 to 175°C	-55 to 175°C	-	-	-
Package / Case	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3	TO-247-3
IGBT Type	Trench	Trench Field Stop	Trench Field Stop	Trench Field Stop	PT	PT	PT
Product Status	Obsolete	Active	Active	Active	Active	Active	Active
RoHS Status	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant	ROHS3 Compliant

Engineering Selection Recommendations

Primary Recommendation: IGW75N60H3FKSA1

The IGW75N60H3FKSA1 is the manufacturer-recommended substitute from Infineon Technologies. This Trench Field Stop IGBT maintains identical voltage (600V) and current (140A) ratings as the IRGP4066DPBF. The device is in active product status, ensuring long-term availability and supply chain support. Both components are ROHS3 compliant and REACH unaffected. The IGW75N60H3FKSA1 operates across -40°C to 175°C, covering the lower temperature range of the original part. Gate charge increases to 470nC, requiring verification of existing gate drive circuit compatibility.

Secondary Recommendation: STGW80H65DFB

The STGW80H65DFB from STMicroelectronics provides a cross-manufacturer alternative with 650V breakdown voltage and 120A continuous current rating. This device offers improved voltage margin and is in active product status. Operating temperature range extends to -55°C, matching the original part's lower temperature limit. Reverse recovery time of 85ns is significantly lower than the IRGP4066DPBF (155ns), improving switching performance. Gate charge of 414nC requires gate drive circuit assessment.

Tertiary Recommendations: IXYS PT Series (IXXH75N60B3D1, IXXH75N60C3, IXXR100N60B3H1)

The IXYS GenX3™ PT (Punch-Through) IGBT devices offer higher current ratings (145A to 160A) and superior switching characteristics with significantly lower gate charge (107nC to 143nC). These devices are in active product status and ROHS3 compliant. The IXXH75N60B3D1 and IXXH75N60C3 maintain 600V ratings with 160A and 150A continuous current respectively. The IXXR100N60B3H1 provides 145A in an ISOPLUS247™ package variant. Lower switching energy and faster switching times benefit high-frequency applications. Gate drive circuits designed for lower gate charge values are compatible.

Lowest Current Alternative: IKW75N60TFKSA1

The IKW75N60TFKSA1 is an Infineon Trench Field Stop device rated for 80A continuous current. This part is suitable only for applications where the 140A rating of the original part exceeds actual circuit requirements. Active product status and ROHS3 compliance are confirmed. This option is not recommended for direct replacement in designs requiring full 140A capability.

All substitute parts maintain TO-247-3 through-hole packaging, ensuring mechanical compatibility with existing PCB layouts and thermal management solutions.

Frequently Asked Questions (FAQ)

Q: Can the IGW75N60H3FKSA1 directly replace the IRGP4066DPBF without circuit modifications?

A: The IGW75N60H3FKSA1 maintains identical voltage and current ratings, enabling direct mechanical and electrical substitution in most applications. However, gate charge increases from 150nC to 470nC. Verify that the existing gate drive circuit can supply the increased charge without exceeding maximum gate voltage or introducing excessive switching losses. PCB layout and thermal management remain unchanged due to identical TO-247-3 packaging.

Q: What is the significance of the Trench Field Stop topology in the IGW75N60H3FKSA1 compared to the original Trench design?

A: Trench Field Stop (FS) technology reduces reverse recovery losses and improves switching performance compared to standard Trench topology. The IGW75N60H3FKSA1 demonstrates lower off-state switching energy (1.7mJ versus 2.16mJ), beneficial for high-frequency applications. The trade-off is increased gate charge, requiring gate drive circuit compatibility assessment.

Q: Why does the STGW80H65DFB have a higher voltage rating (650V) than the IRGP4066DPBF (600V)?

A: The 650V rating provides additional voltage margin for transient overvoltage protection without affecting normal operation at 600V. This is a beneficial characteristic for applications subject to voltage spikes or switching transients. The higher voltage rating does not compromise performance in 600V-rated circuits.

Q: Are the IXYS PT series devices suitable for direct replacement in all applications?

A: IXYS PT devices offer superior switching characteristics and lower gate charge, making them advantageous for high-frequency applications. However, the significantly lower gate charge (107nC to 143nC versus 150nC) requires gate drive circuit verification. Designs with gate drive circuits optimized for higher gate charge values may require adjustment. Confirm that the gate drive circuit can operate reliably with reduced charge requirements.

Q: What is the impact of different operating temperature ranges on part selection?

A: The IRGP4066DPBF operates from -55°C to 175°C. The IGW75N60H3FKSA1 and IKW75N60TFKSA1 operate from -40°C to 175°C, limiting low-temperature operation by 15°C. The STGW80H65DFB maintains -55°C to 175°C, matching the original range. For applications requiring operation below -40°C, select STGW80H65DFB or verify that the -40°C minimum of Infineon alternatives is acceptable.

Q: How do switching energy differences affect circuit performance?

A: Lower switching energy reduces power dissipation during transitions, decreasing thermal load and improving efficiency. The IXYS PT devices demonstrate significantly lower switching energy (1.6 to 1.7mJ on-state, 0.8 to 1.5mJ off-state) compared to the IRGP4066DPBF (2.47mJ on, 2.16mJ off). This benefit is most pronounced in high-frequency switching applications. Verify that thermal management solutions remain adequate with reduced dissipation.

Q: Is package compatibility guaranteed across all substitute parts?

A: All substitute parts utilize TO-247-3 through-hole packaging, ensuring mechanical compatibility with existing PCB footprints and mounting hardware. However, verify specific supplier device package designations: IGW75N60H3FKSA1 uses PG-TO247-3, IKW75N60TFKSA1 uses PG-TO247-3-1, STGW80H65DFB uses TO-247, and IXYS devices use TO-247AD (IXXH) or ISOPLUS247™. These designations refer to identical mechanical dimensions and pin configurations suitable for standard TO-247-3 footprints.

Q: What compliance certifications apply to all substitute parts?

A: All substitute parts are ROHS3 compliant and REACH unaffected, matching the compliance status of the IRGP4066DPBF. This ensures regulatory compliance for applications in regions requiring RoHS3 certification. No additional compliance verification is required when substituting between listed parts.

Request Quote (Ships tomorrow)

Part Number

Quantity

Company

Contact Name

E-mail

Message