IRGP4066D-EPBF IGBT Equivalent & Substitute Parts

Part Overview

The IRGP4066D-EPBF is a Trench IGBT manufactured by Infineon Technologies, rated for 600V collector-emitter breakdown voltage and 140A maximum collector current in a Through Hole TO-247AD package. This component is classified as Obsolete product status. Due to its obsolescence, equivalent and substitute parts from active product lines are necessary for new designs, production continuity, and long-term system reliability. Substitute parts must maintain electrical compatibility within the specified voltage, current, and thermal operating ranges while accommodating packaging and mechanical constraints.

Substiute Parts

IRGP4066D-EPBF
Infineon TechnologiesIn Stock: 1415IRGP4066D-EPBF Datasheet
IRGP4066D-EPBF
Current Part
IGW75N60H3FKSA1
Infineon TechnologiesIn Stock: 1035IGW75N60H3FKSA1 Datasheet
IGW75N60H3FKSA1
MFR Recommended
IKW75N60TFKSA1
Infineon TechnologiesIn Stock: 4913IKW75N60TFKSA1 Datasheet
IKW75N60TFKSA1
MFR Recommended
STGW80H65DFB
STMicroelectronicsIn Stock: 4561STGW80H65DFB Datasheet
STGW80H65DFB
Direct
IXXH75N60B3D1
IXYSIn Stock: 6456IXXH75N60B3D1 Datasheet
IXXH75N60B3D1
MFR Recommended
IXXH75N60C3
IXYSIn Stock: 1228IXXH75N60C3 Datasheet
IXXH75N60C3
MFR Recommended
IXXR100N60B3H1
IXYSIn Stock: 1026IXXR100N60B3H1 Datasheet
IXXR100N60B3H1
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 140 A
Current - Collector Pulsed (Icm) 225 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A V
Power - Max 454 W
Gate Charge 150 nC
Td (on/off) @ 25°C 50ns/200ns ns
Reverse Recovery Time (trr) 155 ns
Operating Temperature Range -55°C ~ 175°C TJ
Mounting Type Through Hole -
Package / Case TO-247-3 -
IGBT Type Trench -

Substitute Part Grouping Explanation

Substitution eligibility for the IRGP4066D-EPBF is determined by the following critical parameters:

Primary Compatibility Criteria:

  • Voltage - Collector Emitter Breakdown (Max): 600V or higher
  • Current - Collector (Ic) (Max): 140A or higher
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 or equivalent mechanical footprint
  • Operating Temperature Range: Must encompass -55°C to 175°C or be compatible with application limits

Secondary Compatibility Criteria:

  • Vce(on) (Max): Lower or equal values preferred for thermal efficiency
  • Gate Charge: Values within reasonable switching performance tolerance
  • Switching delays (Td on/off): Must not exceed application timing constraints
  • Power dissipation capability: 454W or higher

Substitute parts are grouped into two categories:

Category 1: Infineon TrenchStop® Field Stop Technology (IGW75N60H3FKSA1, IKW75N60TFKSA1) These parts maintain Infineon platform compatibility with enhanced field stop technology. Both are Active status products with 600V rating and Through Hole TO-247-3 packaging. IGW75N60H3FKSA1 matches 140A collector current; IKW75N60TFKSA1 operates at 80A collector current.

Category 2: Cross-Manufacturer Alternatives (STGW80H65DFB, IXXH75N60B3D1, IXXH75N60C3, IXXR100N60B3H1) These parts from STMicroelectronics and IXYS provide electrical equivalence with voltage ratings of 600V to 650V and collector currents ranging from 120A to 160A. All maintain Through Hole TO-247-3 packaging and Active product status.

Parameter Comparison

Parameter IRGP4066D-EPBF (Main) IGW75N60H3FKSA1 IKW75N60TFKSA1 STGW80H65DFB IXXH75N60B3D1 IXXH75N60C3 IXXR100N60B3H1
Manufacturer Infineon Infineon Infineon STMicroelectronics IXYS IXYS IXYS
Voltage - Collector Emitter Breakdown (Max) 600V 600V 600V 650V 600V 600V 600V
Current - Collector (Ic) (Max) 140A 140A 80A 120A 160A 150A 145A
Current - Collector Pulsed (Icm) 225A 225A 225A 240A 300A 300A 440A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 75A 2.3V @ 15V, 75A 2V @ 15V, 75A 2V @ 15V, 80A 1.85V @ 15V, 60A 2.3V @ 15V, 60A 1.8V @ 15V, 70A
Power - Max 454W 428W 428W 469W 750W 750W 400W
Gate Charge 150nC 470nC 470nC 414nC 107nC 107nC 143nC
Td (on/off) @ 25°C 50ns/200ns 31ns/265ns 33ns/330ns 84ns/280ns 35ns/118ns 35ns/90ns 30ns/120ns
Reverse Recovery Time (trr) 155ns - 121ns 85ns 25ns - 140ns
Operating Temperature Range -55°C ~ 175°C -40°C ~ 175°C -40°C ~ 175°C -55°C ~ 175°C - - -
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole Through Hole
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
Product Status Obsolete Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Infineon Platform Continuity (Recommended for Direct Replacement)

IGW75N60H3FKSA1 provides the closest electrical equivalence to IRGP4066D-EPBF with identical 600V voltage rating, 140A collector current, and 225A pulsed current. Both components are Infineon products with Active status, ensuring long-term availability and supply chain stability. This part is ROHS3 compliant and maintains Through Hole TO-247-3 packaging. The slightly elevated Vce(on) (2.3V vs. 2.1V) and gate charge (470nC vs. 150nC) represent acceptable trade-offs for field stop technology benefits. Operating temperature range is -40°C to 175°C, which covers most industrial applications; applications requiring -55°C minimum operation require verification.

Current-Limited Alternative (Lower Current Rating)

IKW75N60TFKSA1 is suitable for applications where 80A collector current is sufficient. This Infineon TrenchStop® part maintains 600V voltage rating and Active product status with ROHS3 compliance. The reduced current rating results in lower gate charge (470nC) and improved switching characteristics. This option is appropriate for designs with current margin or where thermal management permits lower current operation.

Cross-Manufacturer Options (Expanded Electrical Headroom)

STGW80H65DFB (STMicroelectronics) offers 650V voltage rating with 120A collector current, providing additional voltage margin. Active product status and ROHS3 compliance are confirmed. The 469W power rating and improved reverse recovery time (85ns) support high-frequency switching applications.

IXXH75N60B3D1 and IXXH75N60C3 (IXYS GenX3™ PT technology) provide 160A and 150A collector currents respectively, exceeding the original 140A specification. Both deliver superior switching performance with significantly lower gate charge (107nC) and reverse recovery time (25ns for B3D1). The 750W power rating accommodates higher thermal loads. These parts are Active status with ROHS3 compliance.

IXXR100N60B3H1 (IXYS GenX3™ PT technology) maintains 145A collector current with ISOPLUS247™ packaging variant. This part offers the lowest Vce(on) (1.8V) and fastest switching delays, optimizing efficiency in high-frequency applications. Active product status and ROHS3 compliance are confirmed.

Selection Criteria Summary:

  • Direct replacement priority: IGW75N60H3FKSA1 (Infineon platform, matched current rating)
  • Thermal efficiency priority: IXXH75N60B3D1 or IXXR100N60B3H1 (lowest Vce(on), highest power rating)
  • Switching speed priority: IXXH75N60B3D1 or IXXH75N60C3 (lowest gate charge, fastest recovery)
  • Voltage margin priority: STGW80H65DFB (650V rating)
  • Cost/availability priority: Verify current inventory levels across all Active alternatives

All substitute parts are ROHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes.

Frequently Asked Questions (FAQ)

Q1: Can IKW75N60TFKSA1 replace IRGP4066D-EPBF in all applications?

IKW75N60TFKSA1 has a maximum collector current rating of 80A, compared to IRGP4066D-EPBF's 140A. This part is suitable only for applications where the design current does not exceed 80A. Both parts share 600V voltage rating, Through Hole TO-247-3 packaging, and Infineon platform compatibility. Verify application current requirements before selection.

Q2: What is the impact of higher gate charge in Infineon TrenchStop® substitutes?

IGW75N60H3FKSA1 and IKW75N60TFKSA1 have gate charge of 470nC compared to IRGP4066D-EPBF's 150nC. Higher gate charge increases driver power dissipation and may require gate driver circuit adjustment. Switching delay times (Td on/off) differ: IGW75N60H3FKSA1 shows 31ns/265ns versus the original 50ns/200ns. Verify gate driver capability and switching frequency compatibility before implementation.

Q3: Are IXYS GenX3™ parts (IXXH75N60B3D1, IXXH75N60C3) direct substitutes?

IXYS GenX3™ parts use PT (Punch-Through) IGBT technology versus the original Trench technology. Both technologies are standard input type IGBTs with 600V voltage rating and Through Hole TO-247-3 packaging. IXYS parts offer superior switching performance (lower gate charge, faster recovery) and higher power ratings (750W). These parts are electrically compatible but represent a technology transition. Verify application switching frequency and thermal management compatibility.

Q4: What is the significance of the 650V rating in STGW80H65DFB?

STGW80H65DFB has a 650V collector-emitter breakdown voltage compared to IRGP4066D-EPBF's 600V. This 50V margin provides additional voltage headroom for transient overvoltage protection. The part is suitable for applications with voltage spikes or marginal supply regulation. Collector current is 120A, which is lower than the original 140A. Verify both voltage and current requirements before selection.

Q5: Can substitute parts operate at -55°C minimum temperature?

IRGP4066D-EPBF specifies -55°C to 175°C operating range. IGW75N60H3FKSA1 and IKW75N60TFKSA1 specify -40°C to 175°C. STGW80H65DFB specifies -55°C to 175°C, matching the original range. IXYS parts do not provide explicit operating temperature specifications in the supplied data. For applications requiring -55°C operation, STGW80H65DFB is the confirmed alternative. Verify IXYS part specifications with manufacturer for low-temperature operation.

Q6: How do switching energy differences affect circuit design?

IRGP4066D-EPBF has switching energy of 2.47mJ (on) and 2.16mJ (off). Substitute parts show variation: IGW75N60H3FKSA1 (3mJ on, 1.7mJ off), IXXH75N60B3D1 (1.7mJ on, 1.5mJ off), STGW80H65DFB (2.1mJ on, 1.5mJ off). Lower switching energy reduces driver power dissipation and improves efficiency. Higher switching energy may require larger gate driver circuits. Verify switching frequency and thermal budget compatibility for each substitute.

Q7: What packaging considerations apply to IXXR100N60B3H1?

IXXR100N60B3H1 uses ISOPLUS247™ packaging, which is mechanically compatible with standard TO-247-3 footprints but represents a variant package designation. Verify PCB layout and heatsink mounting compatibility before implementation. All other substitute parts use standard TO-247-3 packaging with direct mechanical compatibility.

Q8: Are all substitute parts available in Tube packaging?

All substitute parts listed are available in Tube packaging, consistent with the original IRGP4066D-EPBF. Moisture Sensitivity Level (MSL) is 1 (Unlimited) for all parts, indicating no moisture sensitivity constraints during storage and handling.

Q9: What compliance certifications apply to substitute parts?

All substitute parts are ROHS3 compliant, REACH unaffected, and classified as EAR99 for export control purposes. These certifications match the original IRGP4066D-EPBF specifications, ensuring regulatory compatibility for new designs and production continuity.

Q10: Which substitute part offers the best thermal performance?

IXXH75N60B3D1 and IXXH75N60C3 offer the highest power ratings (750W) and lowest Vce(on) values (1.85V and 2.3V respectively at test conditions), resulting in the lowest conduction losses. IXXR100N60B3H1 provides the lowest Vce(on) (1.8V) among all alternatives. For thermal efficiency priority, IXYS GenX3™ parts are recommended. Verify application current and switching frequency to confirm thermal margin.

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