IRGP30B120KD-EP IGBT 1200V 60A Equivalent & Substitute Parts

Part Overview

The IRGP30B120KD-EP is an NPT (Non-Punch Through) IGBT manufactured by Infineon Technologies, rated for 1200V collector-emitter breakdown voltage and 60A continuous collector current with 300W maximum power dissipation. This component is packaged in TO-247AD through-hole configuration and is classified as obsolete product status. Due to its obsolete designation, equivalent and substitute parts from active product lines are necessary for new designs, production continuity, and long-term supply chain reliability. Substitute IGBTs must maintain electrical compatibility within the 1200V voltage class while accommodating variations in current ratings, power dissipation, and switching characteristics.

Substiute Parts

IRGP30B120KD-EP
Infineon TechnologiesIn Stock: 1466IRGP30B120KD-EP Datasheet
IRGP30B120KD-EP
Current Part
IKW25N120H3FKSA1
Infineon TechnologiesIn Stock: 3140IKW25N120H3FKSA1 Datasheet
IKW25N120H3FKSA1
MFR Recommended
STGW40H120DF2
STMicroelectronicsIn Stock: 1524STGW40H120DF2 Datasheet
STGW40H120DF2
Direct
FGH25T120SMD-F155
onsemiIn Stock: 1692FGH25T120SMD-F155 Datasheet
FGH25T120SMD-F155
MFR Recommended
IXDH30N120
IXYSIn Stock: 2024IXDH30N120 Datasheet
IXDH30N120
MFR Recommended
IXYH30N120C3
IXYSIn Stock: 2005IXYH30N120C3 Datasheet
IXYH30N120C3
MFR Recommended
IXYR50N120C3D1
IXYSIn Stock: 1107IXYR50N120C3D1 Datasheet
IXYR50N120C3D1
MFR Recommended
STGW25M120DF3
STMicroelectronicsIn Stock: 1157STGW25M120DF3 Datasheet
STGW25M120DF3
MFR Recommended
STGW28IH125DF
STMicroelectronicsIn Stock: 1471STGW28IH125DF Datasheet
STGW28IH125DF
MFR Recommended
STGWA25M120DF3
STMicroelectronicsIn Stock: 6282STGWA25M120DF3 Datasheet
STGWA25M120DF3
MFR Recommended
STGWA40H120DF2
STMicroelectronicsIn Stock: 15429STGWA40H120DF2 Datasheet
STGWA40H120DF2
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 60 A
Current - Collector Pulsed (Icm) 120 A
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 60A V
Power - Max 300 W
Gate Charge 169 nC
Reverse Recovery Time (trr) 300 ns
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-247-3 -
IGBT Type NPT -
RoHS Status ROHS3 Compliant -

Substitute Part Grouping Explanation

Substitution logic for the IRGP30B120KD-EP is based on the following critical parameters that must be maintained or exceeded:

Mandatory Compatibility Parameters:

  • Voltage - Collector Emitter Breakdown: 1200V minimum (allows 1250V variants)
  • Package / Case: TO-247-3 or TO-247AD through-hole configuration
  • Mounting Type: Through Hole
  • Input Type: Standard gate drive

Performance Parameters (Allowable Variation):

  • Current - Collector (Ic): 50A to 80A range acceptable (original 60A)
  • Power - Max: 290W to 500W range acceptable (original 300W)
  • Vce(on): Lower values preferred for reduced losses (original 4V @ 60A)
  • Gate Charge: 69nC to 225nC acceptable (original 169nC)
  • Operating Temperature: -40°C to 175°C acceptable (original -55°C to 150°C)

IGBT Type Consideration: Substitute parts include both NPT (Non-Punch Through) and Trench Field Stop technology variants. Both types are electrically compatible within the voltage and current specifications, though Trench Field Stop variants typically offer improved switching characteristics and lower gate charge.

Regulatory Compliance: All substitute parts maintain ROHS3 compliance and REACH unaffected status, matching the original part's environmental certifications.

Parameter Comparison

Parameter IRGP30B120KD-EP (Main) IKW25N120H3FKSA1 STGW40H120DF2 FGH25T120SMD-F155 IXDH30N120 IXYH30N120C3 STGW25M120DF3 STGWA25M120DF3 STGWA40H120DF2
Voltage - Collector Emitter Breakdown (Max) 1200V 1200V 1200V 1200V 1200V 1200V 1200V 1200V 1200V
Current - Collector (Ic) (Max) 60A 50A 80A 50A 60A 75A 50A 50A 80A
Current - Collector Pulsed (Icm) 120A 100A 160A 100A 76A 145A 100A 100A 160A
Vce(on) (Max) @ Vge, Ic 4V @ 15V, 60A 2.4V @ 15V, 25A 2.6V @ 15V, 40A 2.4V @ 15V, 25A 2.9V @ 15V, 30A 3.3V @ 15V, 30A 2.3V @ 15V, 25A 2.3V @ 15V, 25A 2.6V @ 15V, 40A
Power - Max 300W 326W 468W 428W 300W 500W 375W 375W 468W
Gate Charge 169nC 115nC 187nC 225nC 120nC 69nC 85nC 85nC 158nC
Reverse Recovery Time (trr) 300ns 290ns 488ns 60ns - - 265ns 265ns 488ns
Operating Temperature Range -55°C to 150°C -40°C to 175°C -55°C to 175°C -55°C to 175°C -55°C to 150°C -55°C to 175°C -55°C to 175°C -55°C to 175°C -55°C to 175°C
Package / Case TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3 TO-247-3
IGBT Type NPT Trench Field Stop Trench Field Stop Trench Field Stop NPT - Trench Field Stop Trench Field Stop Trench Field Stop
Product Status Obsolete Active Active Active Active Active Active Active Active
RoHS Status ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant ROHS3 Compliant

Engineering Selection Recommendations

Direct Electrical Equivalents (NPT Technology):

IXDH30N120 from IXYS provides the closest electrical match to the IRGP30B120KD-EP. Both are NPT-type IGBTs with identical 1200V voltage rating, 60A continuous current rating, and 300W power dissipation. The IXDH30N120 maintains active product status and full ROHS3 compliance, making it the primary recommendation for direct replacement in existing designs without circuit modification.

Higher Current Capacity Substitutes (Trench Field Stop Technology):

STGWA40H120DF2 and STGW40H120DF2 (STMicroelectronics) offer 80A continuous current rating with 468W power dissipation, providing 33% higher current capacity than the original part. These Trench Field Stop variants feature improved switching characteristics with lower gate charge (158nC vs. 169nC) and reduced on-state voltage. Both maintain 1200V voltage rating and TO-247-3 packaging. These parts are suitable for applications requiring higher current margins or thermal headroom.

Balanced Performance Substitutes (50A Current Class):

IKW25N120H3FKSA1 (Infineon), FGH25T120SMD-F155 (onsemi), and STGW25M120DF3 (STMicroelectronics) represent 50A continuous current variants with Trench Field Stop technology. These parts offer superior switching performance with significantly lower gate charge (85nC to 115nC) and reduced on-state voltage (2.3V to 2.4V). Operating temperature range extends to 175°C, providing enhanced thermal margin. These substitutes are recommended for new designs prioritizing efficiency and thermal performance.

Higher Current Density Option:

IXYH30N120C3 (IXYS) provides 75A continuous current with 500W power dissipation and the lowest gate charge (69nC) among all substitutes. This part offers the best switching speed characteristics and is suitable for high-frequency switching applications. Extended operating temperature range to 175°C supports demanding thermal environments.

All substitute parts maintain:

  • 1200V voltage class compatibility
  • TO-247-3 through-hole packaging
  • Standard gate drive input type
  • ROHS3 compliance and REACH unaffected status
  • Moisture Sensitivity Level 1 (unlimited shelf life)

Frequently Asked Questions (FAQ)

Q: Can STGWA40H120DF2 directly replace IRGP30B120KD-EP without circuit changes?

A: STGWA40H120DF2 is electrically compatible at the 1200V voltage class and TO-247-3 package level. However, the higher current rating (80A vs. 60A) and different gate charge (158nC vs. 169nC) may require gate drive circuit evaluation. The lower on-state voltage (2.6V vs. 4V) reduces power dissipation, which is beneficial. Thermal design should be verified for the specific application, as the higher current capacity may affect PCB layout requirements.

Q: What is the difference between NPT and Trench Field Stop IGBT technology in these substitutes?

A: NPT (Non-Punch Through) technology, used in IRGP30B120KD-EP and IXDH30N120, provides simpler gate drive requirements and established reliability in mature applications. Trench Field Stop technology, used in STGW and IKW series parts, offers lower gate charge, faster switching speed, and reduced on-state voltage, resulting in improved efficiency and lower thermal dissipation. Both technologies are electrically compatible within the 1200V voltage class and TO-247-3 package.

Q: Is IXYH30N120C3 suitable for high-frequency switching applications?

A: Yes. IXYH30N120C3 features the lowest gate charge (69nC) among all listed substitutes, enabling faster switching transitions and reduced switching losses. This characteristic makes it suitable for high-frequency applications. The 75A current rating and 500W power dissipation provide adequate margin for most switching topologies. Operating temperature range extends to 175°C, supporting demanding thermal conditions in high-frequency converters.

Q: Can I use a 50A-rated substitute in place of the 60A original part?

A: 50A-rated substitutes (IKW25N120H3FKSA1, FGH25T120SMD-F155, STGW25M120DF3, STGWA25M120DF3) are acceptable if the application's continuous current requirement does not exceed 50A. These parts provide adequate pulsed current capability (100A) for transient conditions. Verify that the application's steady-state current demand remains below 50A and that thermal design accommodates the potentially higher on-state voltage in some variants. These substitutes offer superior switching performance and lower gate charge, making them preferable for new designs with current requirements below 50A.

Q: What is the impact of different gate charge values on circuit design?

A: Gate charge directly affects gate drive circuit design and switching speed. Lower gate charge (69nC to 115nC in substitutes vs. 169nC in original) requires less gate drive current and enables faster switching transitions, reducing switching losses. Higher gate charge (225nC in FGH25T120SMD-F155) requires more robust gate drive capability but may provide more stable switching behavior in certain applications. Gate drive circuits should be evaluated for compatibility with the selected substitute's gate charge specification.

Q: Are all substitute parts available in the same TO-247-3 package?

A: All listed substitute parts use TO-247-3 through-hole packaging, maintaining mechanical and thermal interface compatibility with the original IRGP30B120KD-EP. STGWA25M120DF3 and STGWA40H120DF2 feature long-lead variants of TO-247-3, which may require PCB layout adjustment. IXYR50N120C3D1 uses ISOPLUS247™ packaging, which is mechanically similar but requires verification of thermal interface compatibility in specific applications.

Q: Which substitute offers the best thermal performance?

A: STGWA40H120DF2 and STGW40H120DF2 provide the highest power dissipation rating (468W) and lowest on-state voltage at rated current (2.6V @ 40A), resulting in reduced power loss and improved thermal performance. STGW25M120DF3 and STGWA25M120DF3 offer the lowest on-state voltage (2.3V @ 25A), providing excellent efficiency in lower-current applications. IXYH30N120C3 combines low gate charge with moderate on-state voltage, offering balanced thermal and switching performance.

Q: What compliance certifications do substitute parts maintain?

A: All substitute parts listed maintain ROHS3 compliance and REACH unaffected status, matching the original IRGP30B120KD-EP certifications. Moisture Sensitivity Level is 1 (unlimited shelf life) for all parts except FGH25T120SMD-F155, which lists MSL as Not Applicable. All parts carry EAR99 ECCN classification and 8541.29.0095 HTSUS code, consistent with the original part's regulatory classification.

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