IRGI4061DPBF Equivalent & Substitute Parts

Part Overview

The IRGI4061DPBF is a Trench IGBT manufactured by Infineon Technologies, rated for 600V collector-emitter breakdown voltage and 20A maximum collector current with 43W power dissipation capability. This device is packaged in a Through Hole TO-220AB configuration and is currently classified as obsolete. Due to its obsolete status, identification of functionally equivalent substitute components is necessary to maintain design continuity and ensure continued availability for production and maintenance applications.

Substiute Parts

IRGI4061DPBF
Infineon TechnologiesIn Stock: 5110IRGI4061DPBF Datasheet
IRGI4061DPBF
Current Part
STGF10NB60SD
STMicroelectronicsIn Stock: 1555STGF10NB60SD Datasheet
STGF10NB60SD
MFR Recommended

Key Parameters

Parameter Value Unit
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 20 A
Current - Collector Pulsed (Icm) 40 A
Power - Max 43 W
Vce(on) (Max) 1.59 V @ 15V, 11A
Gate Charge 35 nC
Reverse Recovery Time (trr) 60 ns
Operating Temperature Range -55 to 150 °C (TJ)
Mounting Type Through Hole -
Package / Case TO-220-3 -

Substitute Part Grouping Explanation

Substitution of the IRGI4061DPBF is determined by the following critical parameters:

Voltage Rating: Both the main part and substitute must maintain 600V collector-emitter breakdown voltage to ensure safe operation within the same circuit topology.

Current Rating: The substitute must support the required continuous collector current. The IRGI4061DPBF specifies 20A maximum continuous current; substitutes with equal or higher ratings are acceptable.

Pulsed Current Capability: Peak current handling during transient conditions must be evaluated. The IRGI4061DPBF supports 40A pulsed current.

Power Dissipation: Maximum power rating of 43W establishes thermal design constraints. Substitutes with equal or higher power ratings maintain thermal compatibility.

On-State Voltage (Vce(on)): Forward voltage drop affects efficiency and heat generation. The specified 1.59V @ 15V, 11A establishes the baseline for conduction losses.

Switching Characteristics: Gate charge, switching delay times, and reverse recovery time influence circuit performance and EMI characteristics.

Package and Mounting: Through Hole TO-220-3 packaging ensures mechanical and thermal interface compatibility with existing PCB designs.

Temperature Range: Operating temperature specification of -55°C to 150°C (TJ) must be maintained for reliability across application environments.

The STGF10NB60SD meets these substitution criteria through equivalent voltage and current ratings, compatible packaging, and matching temperature range specifications.

Parameter Comparison

Parameter IRGI4061DPBF STGF10NB60SD Unit
Manufacturer Infineon Technologies STMicroelectronics -
Product Status Obsolete Active -
Voltage - Collector Emitter Breakdown (Max) 600 600 V
Current - Collector (Ic) (Max) 20 23 A
Current - Collector Pulsed (Icm) 40 80 A
Power - Max 43 25 W
Vce(on) (Max) 1.59 1.75 V @ 15V, 10-11A
Gate Charge 35 33 nC
Reverse Recovery Time (trr) 60 37 ns
Operating Temperature Range -55 to 150 -55 to 150 °C (TJ)
Mounting Type Through Hole Through Hole -
Package / Case TO-220-3 TO-220-3 -
REACH Status REACH Unaffected REACH Unaffected -
ECCN EAR99 EAR99 -

Engineering Selection Recommendations

The STGF10NB60SD is an active production substitute for the obsolete IRGI4061DPBF based on the following engineering criteria:

Voltage and Current Compatibility: Both devices operate at 600V breakdown voltage. The STGF10NB60SD provides 23A continuous current, exceeding the IRGI4061DPBF requirement of 20A, and 80A pulsed current versus 40A, ensuring adequate margin for transient conditions.

Thermal Considerations: The STGF10NB60SD maximum power rating of 25W is lower than the IRGI4061DPBF specification of 43W. Circuit designs operating near the 43W limit of the original part require thermal analysis to confirm the substitute remains within acceptable junction temperature limits under worst-case conditions.

Switching Performance: The STGF10NB60SD exhibits faster reverse recovery time (37ns versus 60ns) and comparable gate charge (33nC versus 35nC), resulting in improved switching efficiency and reduced EMI generation compared to the original part.

Regulatory Compliance: Both devices maintain REACH Unaffected status and EAR99 ECCN classification, ensuring equivalent compliance posture for export and environmental regulations.

Product Availability: The STGF10NB60SD is in active production status with confirmed inventory availability, eliminating supply chain risk associated with the obsolete IRGI4061DPBF.

Package Compatibility: Identical TO-220-3 Through Hole packaging ensures direct mechanical and thermal interface compatibility with existing PCB designs without layout modification.

Frequently Asked Questions (FAQ)

Q: Can the STGF10NB60SD directly replace the IRGI4061DPBF in all applications?

A: Direct replacement is possible for applications where continuous current demand does not exceed 20A and thermal design accommodates the lower 25W power rating of the substitute. Circuit designs operating at the maximum 43W specification of the original part require thermal verification before substitution.

Q: What are the key differences in switching characteristics between these devices?

A: The STGF10NB60SD demonstrates faster reverse recovery time (37ns versus 60ns), reducing switching losses and EMI. Gate charge is comparable (33nC versus 35nC), resulting in similar gate drive requirements. Switching delay times differ significantly; the substitute exhibits longer delay times (700ns/1.2µs versus 37ns/111ns), which may affect circuit timing in applications with critical switching synchronization requirements.

Q: Are there any thermal design considerations when substituting these parts?

A: Yes. The STGF10NB60SD maximum power dissipation of 25W is lower than the IRGI4061DPBF specification of 43W. Designs operating near the original part's maximum power rating must verify that the substitute remains within acceptable junction temperature limits. Thermal analysis should account for ambient temperature, heatsink characteristics, and actual circuit operating conditions.

Q: Do both devices require identical gate drive circuits?

A: Both devices specify Standard input type and operate with 15V gate voltage. Gate charge values are comparable (35nC versus 33nC), allowing use of the same gate drive circuit. However, the longer switching delay times of the STGF10NB60SD may require timing adjustment in applications with critical synchronization requirements.

Q: What is the impact of the faster reverse recovery time on circuit performance?

A: The STGF10NB60SD reverse recovery time of 37ns versus 60ns for the IRGI4061DPBF reduces switching losses and improves efficiency. This faster recovery also reduces EMI generation during switching transitions, potentially improving electromagnetic compatibility performance.

Q: Are the packaging and mounting specifications identical?

A: Yes. Both devices use Through Hole TO-220-3 packaging with identical mechanical and thermal interface specifications. No PCB layout modification is required for substitution.

Q: What compliance certifications apply to both devices?

A: Both the IRGI4061DPBF and STGF10NB60SD maintain REACH Unaffected status and EAR99 ECCN classification. Moisture sensitivity level is 1 (Unlimited) for both devices, indicating no special moisture control requirements during storage or handling.

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